" I10" HYUNDAI Search Results

ic 74ls245 pdf datasheet

Abstract: 4816p-002-103 W17 SMD transistor 4816P-001 transistor c124 HYUNDAI i10 SMD LD3 smd transistor w16 transistor c114 ZP2 smd
Contextual Info: CNTRL.1 LED_BLK.1 BSEL_A BSEL_A CRS_A COLX_A SRCI+ SRCI- SRCI- SRCI- SRDO+ SRDO+ LDA[0:7] SRDO- SRDO- SRDO- BSEL_A SRDI+ SRDI+ SRDI+ SRDI- SRDI- COLX_A SRDI- AUI_BLK.1 SDO+ SDO+ PART_A PART_A PART_A LINK_A LINK_A LINK_A SDO- SCI+ SCI+ POL_A SDO+ SDO- SDO-

HY5118164

Contextual Info: "HYUNDAI HYM564124A R-Series Unbuffered 1M x 64-bit CMOS ORAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of tour HY5118164B in 42'42 pm SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O.inF and

HYUNDAI i10

Abstract: ha1930 HYM5V64414
Contextual Info: "HYUNDAI HYM5V64414A N-Series 4M X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64414A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY51V17404A in 24/28 pin SOJ or TSOR-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.

TAA 691

Contextual Info: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HYUNDAI i10

Contextual Info: CY62256V25 PRELIMINARY 32K X 8 2.5V Static RAM Features active LOW output enable OE and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 98% when deselected. • Single 2.5V power supply • Ideal for low-voltage and low-power cache memory

ZF112

Abstract: ZF38 valor ST7032 N117 smd n43 d type 50 pin connector HYUNDAI i10 prxd2 ic 74ls245 pdf datasheet ZF78
Contextual Info: LED_ACT.1 ACT[7:0] ACT[7:0] LED_BLK.1 LDGA LDGA LDGB LDGB AUI_BLK.1 LDA[4:0],LDB[4:0] LDA[4:0],LDB[4:0] DO+ CNTRL.1 DO- LED_BLKP.1 ACT[7:0] DO+ DO+ DO- DO- CI+ LDGA CI- LDGB PLDA[4:0],PLDB[4:0] CI+ PLDA[4:0],PLDB[4:0] LDA[4:0],LDB[4:0] CI- ISA_HUB.1 DI+ CI+

HYUNDAI i10

Contextual Info: CYPRESS CY62256V25 PRELIMINARY 32K x 8 2.5V Static RAM active LOW output enable OE and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 98% when deselected. Features Single 2.5V power supply

HYUNDAI i10

Contextual Info: “H Y U N D A I HYM532210A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221OA is a 2M x 32-bit Fast Page m ode CMOS DRAM m odule consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is m ounted for

STR W 5453 A

Abstract: HYUNDAI i10 STR 5453 LT 5251 STR W 5453 C STR W 5453 STR W 5453 A regulator preprogram bl p76 MCU FLASH
Contextual Info: HMS39C7092 Embedded Flash MCU Preliminary Specification Ver 0.9c System IC SBU, SP BU MCU Business Division, Flash Team Flash MCU HMS39C7092 Released : February. 2001 Update Note ARM is trademark of Advanced RISC Machine Ltd. ARM7TDMI is designed by ARM Ltd.

HYUNDAI i10

Abstract: QAA100 CY62256V25-70SNC CY62256V25-70ZC CY62256V25L-70SNC CY62256V25L-70ZC CY62256V25LL-70SNC " i10" hyundai
Contextual Info: • rn n rn n *= # r C i l h h o o CY62256V25 PRBUMINIÀRY 32K x 8 2.5V Static RAM Features active LO W ou tput enable OE and three -state drivers. The device has an au tom atic pow e r-d ow n feature, reducing the po w e r con sum p tion by m ore tha n 98% w hen deselected.

Contextual Info: » H Y U N D A I H Y M 5 6 4 2 1 4 A F - S e r ie s Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5117804B in 28/28 SOJ

Contextual Info: •HYUNDAI HYM5V64214A F-Series 2M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V64214A is a 2M x 64-bit EDO m ode CMOS DRAM m odule consisting of eight HY51V17804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O .I^F and 0.01 nF

Hyundai I30

Abstract: D4JG C014H HYUNDAI i10 73E28 C03AH SE401 C086H C03EH C034H
Contextual Info: Aox Incorporated - Proprietary and Confidential 99-1-22 7:28 AM SE401 ASIC Specification Aox Incorporated Se401.doc 1 Aox Incorporated - Proprietary and Confidential 1 AOX - SE401 ASIC CONTROLLER. 4

Contextual Info: User’s M anual, V1.0, Mar. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

SAF-TC11IB-64D96E

Abstract: p3x btr diagrams hitachi ecu Hitachi DSA00319 B.A. private examination 2011 manual 1746
Contextual Info: User’s Manual, V2.0, Sep. 2003 TC11IB System Units 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2003-09 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2003.

tag 8948

Abstract: lmb 1021 hyundai ECU IC MT48LC2M32 ibm edram Hitachi DSA00318 B.A. private examination 2011 32F200 A04813
Contextual Info: User’s Manual, V1.2, Feb. 2003 TC11IB System Units 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2003-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2003.

sr0n

Abstract: 1154 se lxo cd 3313 eo BsBM2 "FUSE BOX"
Contextual Info: User’s Manual, V1.0, July 2004 TC1100 System Units 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2004-07 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2004.