"32K X 8" SRAM PLCC Search Results

MT5LC2568DJ

Contextual Info: MT5LC2568 32K X 8 SRAM M IC R O N SRAM 32Kx 8 SRAM LOW VOLTAGE FEATURES PIN ASSIGNMENT (Top View • All I/O pins are 5V tolerant • High speed: 12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V* power supply

a1294

Contextual Info: M62486R VERY FAST CMOS 32K x 9 CACHE BRAM ADVANCE DATA 32K x 9 CMOS SYNCHRONOUS BURST SRAM FAST CYCLE TIME 15ns FAST ACCESS TIMES: 8, 9ns Max ON-BOARD BURST COUNTER INPUT REGISTERS ADDR.,DATA,CTRL SELF-TIMED WRITE CYCLE THREE STATE COMMON I/O HIGH OUTPUT DRIVE CAPABILITY

Contextual Info: S G S -1 H O M S O N t ÿ i IlD !ÄIILI(Ä ffl(gS M62486R VERY FAST CMOS 32K x 9 CACHE BRAM ADVANCE DATA • 32K x 9 CMOS SYNCHRONOUS BURST SRAM > FAST CYCLE TIME 15ns ■ FAST ACCESS TIMES: 8 ,9ns Max ■ ON-BOARD BURST COUNTER ■ INPUT REGISTERS (ADDR.,DATA,CTRL

DS1230

Abstract: EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

EEPROM 28256

Abstract: SRAM 34 pin 28256 eeprom 28256 DS9034PC 34-PIN DS1230 DS1230W DS1230W-150 backup protect pinout
Contextual Info: DS1230W 3.3V 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

EEPROM 28256

Abstract: DS1730Y-150 DS1730Y-200
Contextual Info: DS1730Y DS1730Y 3–Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM

DS1230

Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

Contextual Info: DS1330YLPM/ABLPM PRODUCT PREVIEW DALLAS SEMICONDUCTOR FEATURES DS1330YLPM/ABLPM 256K Nonvolatile SRAM with Power Monitors PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Replaces 32K x 8 volatile static RAM or EEPROM

Contextual Info: DS1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile

CY7C199

Abstract: EME-6300H 16MB SRAM
Contextual Info: Qualification Report December 1995, QTP# 94412 Version 2.0 256K SRAM, R3 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

fm 4213 ic

Abstract: DS00026
Contextual Info: lY lW MX66V256 Super Low Power 32k x 8 CMOS SRAM DESCRIPTION FEATURES The MX66V256 is a high performance, low power CMOS Static Random Access Memory organized as 32,768 words by 8 bits and operates from a wide range of supply voltage. Advanced CMOS technology and circuit techniques

Contextual Info: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs

DS1230Y-200 DALLAS

Abstract: EEPROM 28256 DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM ww w.dalsem i.com PIN ASSIGNMENT FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

Contextual Info: DS1330YLPM/ABLPM PRODUCT PREVIEW DS1330YLPM/ABLPM DALLAS SEMICONDUCTOR 256K Nonvolatile SRAM with Power Monitors PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Replaces 32K x 8 volatile static RAM or EEPROM

DS1630AB-100

Abstract: DS1630AB100
Contextual Info: DS1630Y/AB DALLAS SEMICONDUCTOR DS1630Y/AB Partitionable 256K NV SRAM FEATURES • PIN ASSIGNMENT 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x EEPROM 8 volatile static RAM or

3610 dallas

Contextual Info: D S1630Y/AB DALLAS DS1630Y/AB Partitionable 256K NV SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or

Contextual Info: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc Vcc • Data is automatically protected during power loss WE • Directly replaces 32K x 8 volatile static RAMs or EEPROMs

28256 eeprom

Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB
Contextual Info: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM

5bl41

Contextual Info: DS1730Y DALLAS SEMICONDUCTOR DS1730Y 3-V olt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or

EEPROM 28256

Abstract: 34-PIN DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC 740-MIL SRAM 34 pin
Contextual Info: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory

EEPROM 28256

Abstract: DS1230AB CI 740 DS1230 DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-85 DS9034PC
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,

DS1230Y-200 DALLAS

Abstract: DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS9034PC
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,

Contextual Info: MX66X256 m A Super Low Power 32k x 8 CMOS SRAM DESCRIPTION FEATURES Ql Wide supply voltage range - CMOS Input level 0.8Vcc/0.2Vcc 5.5 V to 1.5V - TTL Input level (3V/0V) 4.5 V to 1.5V S Super low power consumption - 5V operation 60mA (Max.) write current

DS1230Y-120-IND

Abstract: DS1230Y-85
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,