"CONTENT ADDRESSABLE MEMORY" PRECHARGE Search Results

stk 2230

Contextual Info: Am95C85 Content Addressable Data Manager FINAL DISTINCTIVE CHARACTERISTICS High-performance sorting, searching, and updating 1K byte software-reconfigurable memory array Programmable record size Cascadable up to 256 devices Content-addressable operation, independent o f record

Contextual Info: Am95C85 Content Addressable Data Manager PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • • High-performance sorting, searching, and updating 1K byte software-reconfigurable memory array Programmable record size Cascadable up to 256 devices Content-addressable operation, independent of record

stk 2230

Abstract: stk 2229 2240 stk circuit diagram
Contextual Info: Am95C85 Content Addressable Data Manager FINAL DISTINCTIVE CHARACTERISTICS • • • • • High-performance sorting, searching, and updating 1K byte software-reconfigurable memory array Programmable record size Cascadable up to 256 devices Content-addressable operation, independent of record

FND PIN DIAGRAM

Abstract: stk 2230 2240 stk circuit diagram 95C8 stk 2229 fnd 500 95c8s FND 70
Contextual Info: Am95C85 Content Addressable Data Manager FINAL DISTIN CTIVE CHARACTERISTICS • • • High-perform ance sorting, searching, and updating 1K byte software-reconfigurable memory array Program m able record size • Cascadable up to 256 devices • Content-addressable operation, independent of record

tcam

Abstract: R8A20410BG renesas tcam tcam renesas renesas CAM R8A2041 Xelerated tcam TCAM chip Xelerated ternary content addressable memory
Contextual Info: 20Mbit QUAD-Search Content Addressable Memory Features & Benefits  20Mbit density Supports large routing tables and enables low-cost, low-power, more reliable system designs  360 Million Searches per Second MSPS per table Delivers the industry’s highest packet look-up

ternary content addressable memory VHDL

Abstract: ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge
Contextual Info: V S MSUNG STDL150 ELECTRONICS STDL150 Standard Cell 0.13um System-On-Chip ASIC March 2003, V2.0 Features Analog cores - Ldrawn = 0.13um 1.5/2.5/3.3V Device 1.5/2.5/3.3V - Up to 45.8 million gates Interface - Power dissipation: 13nW/MHz@1.5V, 2SL, ND2 5.0V

ARM9TDMI

Abstract: ARM1020E samsung hdd Samsung S ARM teaklite DSPG SMART ASIC bga ARM920t datasheet Avant Electronics USB samsung
Contextual Info: V S MSUNG STDH150 ELECTRONICS STDH150 Standard Cell 0.13um System-On-Chip ASIC Dec 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 34.3 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2

ARM dual port SRAM compiler

Abstract: DSPG teaklite ARM9TDMI ARM1020E samsung hdd UART 16C450 Standard Cell 0.13um System-On-Chip ASIC ARM920T ARM926EJ
Contextual Info: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2

ARM1020E

Abstract: samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T
Contextual Info: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2

ARM dual port SRAM compiler

Abstract: rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110
Contextual Info: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device

DSPG

Abstract: Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler
Contextual Info: V S MSUNG STD131 ELECTRONICS STD131 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device

hp compaq 6910p

Abstract: compaq 6910P notebook intel 8201 intel nand flash sata ssd controller sata ssd SFF-8144 6910P SSD 352 SSDSA1MH160G1
Contextual Info: Intel X18-M/X25-M SATA Solid State Drive SSDSA1MH080G1, SSDSA2MH080G1, SSDSA1MH160G1, SSDSA2MH160G1 Product Manual „ „ „ „ „ „ „ „ „ Available in 1.8” and 2.5” Form Factors Capacity: 80 GB and 160 GB Uses Intel NAND flash memory Multi-Level Cell

Contextual Info: Version 2.0 ATP Industrial Grade SlimSATA Embedded Module Specification ATP Industrial Grade SlimSATA Embedded Module Version 2.0 Your Ultimate Memory Solution! 1 ATP Confidential &Proprietary Version 2.0 ATP Industrial Grade SlimSATA Embedded Module Specification

SFF-8201

Abstract: intel nand flash memory intel ssd block diagram for mini SATA SSD intel nand flash block diagram of sata SSD drive CNS14348
Contextual Info: Intel X25-V SATA Solid State Drive Model Codes: SSDSA2M040G2XX Product Codes: SSDSA2MP040G2XX Product Manual         Available in 2.5” Form Factor Capacity: 40 GB Uses Intel NAND flash memory Multi-Level Cell MLC components Read and Write IOPS Specifications

SSDSA2MH160G2

Abstract: SSDSA1MH080G201 SSDSA2MH080G2 SSDSA1MH160G201 SSDSA1MH160G2 SSDSA1MH080G2 block diagram for mini SATA SSD SFF-8144 intel ssd intel nand flash
Contextual Info: Intel X18-M/X25-M SATA Solid State Drive 34 nm Product Line SSDSA1MH080G2, SSDSA2MH080G2, SSDSA1MH160G2, SSDSA2MH160G2 Product Manual „ „ „ „ „ „ „ „ Available in 1.8” and 2.5” Form Factors Capacity: 80 GB and 160 GB Uses Intel NAND flash memory Multi-Level Cell

JESD218

Abstract: SSDSC2 intel nand flash "content addressable memory" power match precharge SFF-8201
Contextual Info: Intel Solid-State Drive 510 Series SSDSC2MH120A2XX, SSDSC2MH250A2XX Product Specification        Capacity: 120 GB, 250 GB Components: Intel® 34nm NAND Flash Memory Multi-Level Cell MLC Form Factor: 2.5-inch — Thickness: 9.5 mm — Weight: 80 ±2 grams

Samsung 64Gb Nand flash

Abstract: MCBQE25G5MPQ-0VA03 MCCOE64G5MPQ-0VA03 MCCOE50G5MPQ-0VA03 S3C49RBXZZ 01h-FDh SAT-PH22-S2A-FG S3C49 32G nand 73212
Contextual Info: NAND based Solid State Drive Serial ATA NSSD NAND based Solid State Drive Datasheet Rev. 1.0 Sept 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: Product data sheet Industrial SlimSSD -297A X-200s Series SATA II - 3.0Gb/s up to UDMA6 / MDMA2 / PIO4 Standard and industrial temperature grade B U: Sw i ss b it Gr ou p Date : 31 Oct o be r 2 0 1 1 Re vi si o n: 1 .1 0 Fi le : X - 2 00 s_ da ta_ s he e t _S A - V x BR_Re v 1 1 0 .d oc

Contextual Info: Product data sheet Industrial SATA SSD 2.5” X-200 Series SATA II - 3.0Gb/s up to UDMA6 / MDMA2 / PIO4 Standard and industrial temperature grade B U: Sw i ss b it Gr ou p Date : Janu ar y 2 , 2 0 1 2 Re vi si o n: 1 . 2 Fi le : X - 2 00_ da ta_ s he e t_ SA - Q x BR _Re v 1 1 2

Contextual Info: Product data sheet Industrial SATA SSD 2.5” X-200 Series SATA II - 3.0Gb/s up to UDMA6 / MDMA2 / PIO4 Standard and industrial temperature grade B U: Sw i ss b it Gr ou p Date : De ce m be r 14 , 2 0 1 2 Re vi si o n: 1 .4 0 Fi le : X - 2 00_ da ta_ s he e t_ SA - Q x BR_Re v 1 4 0. doc

Contextual Info: Product data sheet Industrial Slim-SATA SSD MO-297A X-200s Series SATA II - 3.0Gb/s up to UDMA6 / MDMA2 / PIO4 Standard and industrial temperature grade B U: Sw i ss b it Gr ou p Date : 31 Oct o be r 2 0 1 1 Re vi si o n: 1 .1 0 Fi le : X - 2 00 s_ da ta_ s he e t _S A - V x BR_ Re v 1 1 0 .d oc

Contextual Info: Product data sheet 2.5” Industrial X-200 Series SATA II - 3.0Gb/s up to UDMA6 / MDMA2 / PIO4 Standard and industrial temperature grade B U: Sw i ss b it Gr ou p Date : Janu ar y 2 , 2 0 1 2 Re vi si o n: 1 . 2 Fi le : X - 2 00_ da ta_ s he e t_ SA - Q x BR _Re v 1 1 2

22 pin SSD connector

Abstract: SSDSA2M160G2XX SSDsa2m080g2 SSDSA2M080G2XX x25-m SSDSA2MJ080G2XX SSDSA1M160G2XX intel ssd Intel flash memory small outline package guide 2010 Intel Corporation esd flash small outline package guide
Contextual Info: Intel X18-M/X25-M SATA Solid-State Drive 34 nm Product Line Model Codes: SSDSA2M080G2XX, SSDSA1M080G2XX, SSDSA2M120G2XX, SSDSA2M160G2XX, SSDSA1M160G2XX Product Codes: SSDSA2MH080G2XX, SSDSA2MJ080G2XX, SSDSA1MH080G2XX, SSDSA2MH120G2XX, SSDSA2MH160G2XX, SSDSA1MH160G2XX

JESD218

Abstract: intel ssd 320 intel nand flash ISO-7779 "content addressable memory" power match precharge intel ssd intel 25nm nand flash intel flash 25nm
Contextual Info: Intel Solid-State Drive 320 Series Product Specification          Form Factors: 1.8-inch and 2.5-inch Capacity: — 80/160/300 GB 1.8-inch — 40/80/120/160/300/600 GB (2.5-inch) Components: Intel® 25nm NAND Flash Memory Multi-Level Cell (MLC)