"DARLINGTON TRANSISTOR" PANASONIC Search Results

Contextual Info: Panasonic Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low -frequency am plification Unit: mm 4 . 5+ 0.1 • Features • • • • High foward current transfer ratio hpe. 60V zener diode built in between collector and base. Darlington connection.

DN8650

Abstract: darlington buffer array Seven Transistor Array PNP DN-86
Contextual Info: Panasonic Others DN8650 7-circuit Darlington Driver Array • Overview The DN8650, which is an NPN Darlington type buffer with PNP transistor for input, is a 7-circuit non-inverting type driver array. ■ Features • • • • • 7-circuit buffer Low output breakdown voltage : V ce sus = 35V (min)

Contextual Info: Panasonic Others DN8650 7-circuit Darlington Driver Array • Overview The DN8650, which is an NPN Darlington type buffer with PNP transistor for input, is a 7-circuit non-inverting type driver array. ■ Features • 7-circuit buffer • • • • Low output breakdown voltage : V ce sus = 3 5 V (min)

PU4420

Abstract: PU3120 PU3220 PU4120 PU4220 PU4520 JU254
Contextual Info: Power Transistor Arrays PU3220, PU4220, PU4520 Silicon NPN Epitaxial Planar Darlington Type PU3220, PU4220, PU4520 Package Dimensions PU3220 Unit:mm 4.2max. 20.5max. Power Amplifier, Switching Complementary Pair with PU3120, PU4120, PU4420 •Features -0:5 + 0.15

2SD1198

Abstract: 2SD1198A
Contextual Info: Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification • Features ■ Absolute Maximum Ratings Parameter 2SD1198 base voltage 2SD1198A Collector to 2SD1198 emitter voltage 2SD1198A * Ratings Unit

2SD1198

Abstract: 2SD1198A
Contextual Info: Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification • Features ■ Absolute Maximum Ratings Parameter 2SD1198 base voltage 2SD1198A Collector to 2SD1198 emitter voltage 2SD1198A * Ratings VEBO

DARLINGTON TRANSISTOR ARRAYS 2A

Abstract: PU3119 transistor C1505 i32652 PU3219 PU4119 PU4219 PU4419 PU4519 darlington pair transistor 1A
Contextual Info: PU3219, PU4219, PU4519 Power Transistor Arrays PU3219, PU4219, PU4519 Silicon NPN Epitaxial Planar Darlington Type Package Dimensions PU3219 Power Amplifier, Switching Complementary Pair with PU3119, PU4119, PU4419 • Features • • • • • anlflifflVllf

VOLTAGE-50

Contextual Info: Panasonic Transistor 2SD2598 Unit: mm Silicon NPN epitaxial planer type darlington For low -frequency am plification • ïin a Features • Forward current transfer ratio hpe is designed high, which is ap­ propriate to the driver circuit of motors and printer hammer: hFE

PU3119

Abstract: DARLINGTON TRANSISTOR ARRAYS 2A PU3219 PU4119 PU4219 PU4419 PU4519
Contextual Info: Power Transistor Arrays PU3219, PU4219, PU4519 PU3219, PU4219, PU4519 • Package Dimensions Silicon NPN Epitaxial Planar Darlington Type PU3219 Unit: mm Power Amplifier, Switching Complementary Pair with PU3119, PU4119, PU4419 ■Features ^fl-0.5 + 0.15 -i-*-1.0±0.25

2SD1478

Abstract: 2SD1478A
Contextual Info: Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 Symbol Collector to 2SD1478 base voltage 2SD1478A Collector to 2SD1478 Ratings 30 VCBO

2SD1205

Abstract: 2SD1205A
Contextual Info: Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 2.5±0.1 6.9±0.1 Parameter 1.0 0.45±0.05 2SD1205 base voltage 2SD1205A Collector to 2SD1205 emitter voltage 2SD1205A Ratings VEBO Peak collector current

2SD2220

Contextual Info: Power Transistors 2SD2220 Silicon NPN triple diffusion planar type Darlington For low-frequency amplification Unit: mm ● ● Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward

2SD1478

Abstract: 2SD1478A
Contextual Info: Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm 0.40+0.10 ñ0.05 For low-frequency amplification 0.16+0.10 -0.06 Parameter 2SD1478 base voltage 2SD1478A Collector to 2SD1478 Ratings 30 VCBO Emitter to base voltage VEBO Peak collector current

2SD2258

Contextual Info: Transistor 2SD2258 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification 6.9±0.1 4.0 2.5±0.1 0.8 • Features (0.5) (1.0) (0.2) 4.5±0.1 0.7 0.65 max. 14.5±0.5 (1.0) • Darlington connection • High forward current transfer ratio hFE

DARLINGTON TRANSISTOR ARRAYS 2A

Abstract: PU4422 PU3122 PU4122
Contextual Info: Power Transistor Arrays PU3122, PU4122, PU4422 PU3122, PU4122, PU4422 Package Dimensions PU3122 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching • Features • • • • • • • Built-in 30V Zener diode b etw een C and B

2SD2598

Contextual Info: Transistor 2SD2598 Silicon NPN epitaxial planer type darlington Unit: mm 1.05 2.5±0.1 ±0.05 4.0 0.8 • Absolute Maximum Ratings * Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO

2SD2067

Contextual Info: Transistor 2SD2067 Tentative Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 (0.8) (0.5) (1.0) (0.2) 4.5±0.1 For low-frequency output amplification (1.0) 0.65 max. ● ● ● ● ● Darlington connection. High foward current transfer ratio hFE.

PU4424

Abstract: PU4124 PU3124
Contextual Info: Power Transistor Arrays PU3124, PU4124, PU 4424 PU3124, PU41.24, PU4424 Package Dimensions P U 3124 Unit! mm 4.2max. 20.5max. Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching 0.8 ±0.25 4 ^0.5 + 0 .15 1.0±0.25 2.54 + 0.2 I 0 .5 + 0 .1 5

2SD1511

Contextual Info: Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification 4.5±0.1 ● • * 1.5±0.1 Parameter Symbol Ratings Unit VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current

2SD2067

Contextual Info: Transistor 2SD2067 Tentative Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.7 4.0 (1.45) 0.8 • Features ● ● 14.5±0.5 +0.1 0.45–0.05 2.5±0.5 1 2.5±0.5 2 3 2.5±0.1 ● Darlington connection. High foward current transfer ratio hFE.

darlington pair transistor

Abstract: 6LF6 common collector amplifier circuit designing micro-x mhz ghz microwave GRM188R71E473K Amplifier SOT-89 c4 0603CS-33NX_LU SKY65014 sky65015-70lf transistor Common Base configuration
Contextual Info: APPLICATION NOTE Gain Block Bias Networks Introduction Skyworks gain block amplifiers are InGaP/GaAs HBT integrated circuits. They use a Darlington-pair transistor configuration with bias and feedback resistors properly selected to determine the gain, input and output impedances and bias parameters. A schematic representation of the amplifier is shown in Figure 1.

2SD1205

Abstract: 2SD1205A
Contextual Info: Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9±0.1 1.5 1.0 4.5±0.1 7 0. R 0.85 4.1±0.2 ● 2.4±0.2 2.0±0.2 3.5±0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE

Contextual Info: Pow er Transistor A rrays PU 3220, PU 4220, PU 4520 PU3220, PU4220, PU4520 Package Dim ensions U nit'.m m j P U 3220 Silicon NPN Epitaxial Planar Darlington Type 4.2max. 20 .5ma x. Pow er Am plifier, Switching C om plem entary Pair with P U 3 1 2 0 , P U 4 1 2 0 , P U 4 42 0

PU4120

Abstract: PU3120 PU3220 PU4220 PU4420 PU4520
Contextual Info: Power Transistor Arrays PU3120, PU4120, PU4420 PU3120, PU4120, PU4420 Silicon NPN Triple-Diffused Planar Darlington Type i Package D im ensions Power A m plifier, Switching C om plem entary Pair with PU3220, PU4220, PU4520 • Features PU 3 1 2 0 • H igh D C c u r r e n t g ain I i f e