"GALLIUM NITRIDE" MOSFET Search Results

"gallium nitride" mosfet

Abstract: 48V MOSFET LM5113 GaN power MOSFET "gallium nitride" Half-Bridge Driver
Contextual Info: First Gate Driver for Enhancement Mode GaN Power FETs 100V Half-Bridge Driver Enables Greater Efficiency, Power Density, and Simplicity national.com/isolatedpower Gallium Nitride Power FETs Deliver New Levels of Power Density Enhancement mode Gallium Nitride GaN power FETs can

EPC8004

Contextual Info: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been

SiC-JFET

Abstract: SiC JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate SiC jfet cascode silicon carbide JFET normally on SiC BJT 600V GaN DMOS SiC
Contextual Info: Gallium Nitride GaN versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications Introduction Work on wide bandgap materials and devices have been going on for many years. The properties of these materials are very exciting to designers because wide band gap devices promise

Contextual Info: UCC27611 www.ti.com SLUSBA5B – DECEMBER 2012 4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver Check for Samples: UCC27611 FEATURES APPLICATIONS • • • • • • 1 • • • • • • • • • • • • • • Enhancement Mode Gallium Nitride FETs

JB TRANSISTOR SMD MARKING CODE

Abstract: transistor AE code PNP smd Block Diagram solar based ups WSON socket
Contextual Info: UCC27611 www.ti.com SLUSBA5B – DECEMBER 2012 4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver Check for Samples: UCC27611 FEATURES APPLICATIONS • • • • • • 1 • • • • • • • • • • • • • • Enhancement Mode Gallium Nitride FETs

Contextual Info: UCC27611 www.ti.com SLUSBA5A – DECEMBER 2012 4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver Check for Samples: UCC27611 FEATURES APPLICATIONS • • • • • • 1 • • • • • • • • • • • • • • Enhancement Mode Gallium Nitride FETs

Contextual Info: "Developed for EDN. For more related features, blogs and insight from the EE community, go to www.EDN.com" High-Voltage Silicon MOSFETs, GaN, and SiC: All have a place Philip Zuk, Director of Market Development, High-Voltage MOSFET Group, Vishay Siliconix

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

LK141

Abstract: 60W VHF TV RF amplifier
Contextual Info: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation

Contextual Info: PRELIMINARY RFJS3006F rGAN-HVTM 650V SSFET With Ultra-Fast Freewheeling Diode The RFJS3006F is a 30A, 650V normally-off sourced switched FET SSFET GaN HEMT providing the same insulated gate ease of use as a power MOSFET or an IGBT, but enabling much higher efficiency at much higher PWM frequencies. The SSFET uses

MOSFET P-channel SOT-23-6

Abstract: cl5000 transistor EP 430 LM5114
Contextual Info: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The

4G base station power amplifier

Contextual Info: Virtuous impact of higher RF PA efficiency Circle of Green Rev. 2 — 5 July 2012 White paper Document information Info Content Author s Maury Wood – Program Manager, Operator marketing, NXP Semiconductors. The author acknowledges the contribution of the following NXP innovators who

Texas Instruments Power of GaN

Abstract: Texas Instruments GaN "gallium nitride" mosfet
Contextual Info: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The

MAX5048CAUT

Abstract: Low Power PWM controller 6-pin
Contextual Info: EVALUATION KIT AVAILABLE MAX5048C General Description The MAX5048C is a high-speed MOSFET driver capable of sinking/sourcing 7A/3A peak currents. This device takes logic input signals and drives a large external MOSFET. The device has inverting and noninverting

Contextual Info: EVALUATION KIT AVAILABLE MAX5048C General Description The MAX5048C is a high-speed MOSFET driver capable of sinking/sourcing 7A/3A peak currents. This device takes logic input signals and drives a large external MOSFET. The device has inverting and noninverting

MAX5048

Contextual Info: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The

Contextual Info: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article,

208 SOT-23-6

Abstract: MOSFET P-channel SOT-23-6 sot23 Flyback Converter
Contextual Info: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The

BC337 NPN transistor

Abstract: AN2042 mercury smps circuit diagram emergency fluorescent light schematic diagram VIPER22A Circuit Diagrams of China LED Emergency light VIPER flyback 10W UV led diode 200 nm peak 1W Viper22 dali bridge schematic
Contextual Info: AN2042 Application note VIPower: dimmable driver for high brightness LEDs with VIPer22A-E Introduction This application note introduces an innovative solution to drive high brightness 1W LEDs Light Emitting Diode , using VIPer22A-E in flyback configuration with output current control.

Contextual Info: 1EDI EiceDRIVER Compact 1EDI20N12AF Single Channel MOSFET and GaN HEMT Gate Driver IC 1EDI20N12AF Preliminary Data Sheet Rev. 1.02, 2014-04-08 Industrial Power Control Edition 2014-04-08 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG

LTTS e3

Abstract: gbs transistors
Contextual Info: Commerce Control List Supplement No. 1 to Part 774 CATEGORY 3 - ELECTRONICS A. “END ITEMS,” “EQUIPMENT,” “ACCESSORIES,” “ATTACHMENTS,” “PARTS,” “COMPONENTS,” AND “SYSTEMS” Note 1: The control status of equipment and “components” described in 3A001 or 3A002,

1000 watt buck converter scheme

Abstract: 48v to 24v buck buck pfc flyback led driver with pwm dimming problems lm5010 and slope of voltage Halogen lighting transformer SMD led warm white Aluminum Base LED PCB Application Note Nationals LM2623 buck converter vout 100v
Contextual Info: High-Brightness LED Lighting Solutions www.national.com/LED 2008 Vol. 2 High-Brightness LED Lighting . 2-3 LED Drivers and Controllers . 4-5 Switched-Capacitor Solutions . 6 Inductive-Boost LED Drivers . 7-8

dimmer MR16 SCHEMATIC

Abstract: ultra bright LED backlight driver schematic LM3409 48v to 24v buck gallium phosphide band structure smps circuit diagrams 12v 5a LM3402 LM3407 LM3445 LM3421
Contextual Info: LED Drivers for High-Brightness Lighting Solutions Guide national.com/LED 2009 Vol. 1 PWM Dimming Signal Temp Sensor MCU 3.3V 48V General Illumination LED Drivers Technology Overview Product Highlights Application Information Design Examples Articles AC/DC

Contextual Info: LM5114 www.ti.com SNVS790E – JANUARY 2012 – REVISED MARCH 2013 LM5114 Single 7.6A Peak Current Low-Side Gate Driver Check for Samples: LM5114 FEATURES DESCRIPTION • The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary