"MA 3500" IC Search Results

Contextual Info: SIEMENS NPN Silizium Fototransistor Silicon NPN Phototransistor SFH 3500/FA SFH 3505/FA Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Semiconductor Group 1 1998-12-18 SFH 3500/FA SFH 3505/FA SIEMENS Wesentliche Merkmale

Contextual Info: SIEMENS NPN Silizium Fototransistor Silicon NPN Phototransistor SFH 3500/FA SFH 3505/FA Vorläufige Daten / Preliminary Data Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Semiconductor Group 1 1998-11-12 SFH 3500/FA

CVCO55BE-3245-3500

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3245 MHz 20.0 VDC 3500 MHz Tuning Voltage: 1.0 Supply Voltage: 4.75 5.0 5.25 VDC +2.5 +5.0 dBm 38 mA Output Power: Supply Current: nd

15-Oct-08

Contextual Info: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3350 MHz 4.7 VDC 3500 Tuning Voltage: MHz 0.3 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +0.5 +2.5 +4.5 dBm 20 mA Pushing:

Contextual Info: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3245 MHz 20.0 VDC 3500 MHz Tuning Voltage: 1.0 Supply Voltage: 4.75 5.0 5.25 VDC +2.5 +5.0 dBm 38 mA Output Power: Supply Current:

CVCO55BE-3245-3500

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3245 MHz 20.0 VDC 3500 MHz Tuning Voltage: 1.0 Supply Voltage: 4.75 5.0 5.25 VDC +2.5 +5.0 dBm 38 mA Output Power: Supply Current: nd

1N5825

Abstract: 2N6052 2N6058 2N6059 MSD6100
Contextual Info: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general–purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector–Emitter Sustaining Voltage — @ 100 mA

2N6052G

Abstract: 1N5825 2N6052 2N6059 MSD6100 npn transistor TO-3 5 amp 140 volts
Contextual Info: 2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA

2n6059

Abstract: 100 amp darlington transistors 2N6058 2n6052
Contextual Info: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3245 MHz 20.0 VDC 3500 MHz Tuning Voltage: 1.0 Supply Voltage: 4.75 5.0 5.25 VDC +2.5 +5.0 dBm 38 mA Output Power: Supply Current: nd

CVCO55BE-3350-3500

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3350 MHz 4.7 VDC 3500 MHz Tuning Voltage: 0.3 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +0.5 +2.5 +4.5 dBm 20 mA Pushing: 2.0 MHz/V

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3350 MHz 16 VDC 3500 Tuning Voltage: MHz 0.1 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm 30 40 mA Harmonic Suppression 2 Harmonic :

11-OCT

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3500 MHz 16.0 VDC 3700 MHz Tuning Voltage: 0.1 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm 30 40 mA Harmonic Suppression 2 Harmonic :

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3500 MHz 16.0 VDC 3700 MHz Tuning Voltage: 0.1 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm 30 40 mA Harmonic Suppression 2 Harmonic :

CVCO55BE-3350-3500

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3350 MHz 4.7 VDC 3500 MHz Tuning Voltage: 0.3 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +0.5 +2.5 +4.5 dBm 20 mA Pushing: 2.0 MHz/V

Dallas SN75176

Abstract: SN75LP185A sn75als181 sn75als180 DS90C562 MAX232 MAX241 MC14506 SN75LVDS81 SN75185 SN75196
Contextual Info: SELECTION GUIDE TIA/EIA-232-F DRIVERS/RECEIVERS PER PACKAGE DRIVER/RECEIVER tpd ns ICC (mA) SUPPLY VOLTAGE(S) (V) N/A 1 ±5 to ±15 3500 0.16 ±12 220 20 4/0 9 ±9 FOOTPRINT LT1030 DEVICE NAME PAGE NUMBER LT1030C 2–57 SN75C188 2–837 MC1488 2–829 SN55188

smd diode code 6N

Abstract: Q65110A9698
Contextual Info: Golden DRAGON Lead Pb Free Product - RoHS Compliant LCW W5SM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 75 lm bei 350 mA und bis zu 154 lm bei 1 A (3500 K)

SPX33

Abstract: transistor 7150 SPX53 LC 7130 4N26 Photodiode transistor 7550 4n33 4n35 04 transistor transistor lf SPX7273
Contextual Info: Optically Coupled Isolators 6 Pin Dual-in-Line UL RECOGNIZED TO 3500 VAC — FILE E58979 'Type Current transfer ratio At specified forward1 current (lF) and Vce CTR(%) min. max. lF(ma) VCE(volts) Input to output isolation voltage Collector breakdown <lc = 100 ì*A)

ic cx 0462

Abstract: S18DE Q65110A9698 LCWW5SM Q65110A9694
Contextual Info: Golden DRAGON Lead Pb Free Product - RoHS Compliant LCW W5SM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 75 lm bei 350 mA und bis zu 154 lm bei 1 A (3500 K)

2N8050

Abstract: 2n6057 8050 npn 2n60s0 ns5 transistor Transistor Q 8050 2N6058 MOTOROLA transistor SS 8050 2n6052
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6050 Darlington Complementary Silicon Power IVansistors thru . . . designed for general-purpose amplifier and low frequency switching applications. • High D C Current Gain — h p E = 3500 Typ @ lc = 5.0 Adc • Collector-Emitter Sustaining Voltage — @ 100 mA

Contextual Info: LES DEPT 1 i 2 3 4 2 5 6 ? 8 9 10 II 12 NC JZ PARI NAME: S T O U G H T O N , MA FEMALE PART - j- § PART NO: CUSTOMER DRAWING TERMINAL NUMBER 3500H MA T E R 1AL 1 0 9 / -5 FINISH OC S T A MP 3500 H 10 9 A - 5 .016 R 15 T ± .0 0 0 5 TH ICK 83.0-66.5 BRASS

Telefunken EL12

Abstract: EL12 K2XA Telefunken 1938 telefunken ra 200 telefunken ef Telefunken el 12
Contextual Info: TELEFUNKEN N e tz r ö h r e fü r W - H e iz u n g in d ir e k t g e h e iz t E n d p e n to d e Heizspannung Heizstrom Betriebswerte: EL 12 1. Uf 1, 6 ,3 1,2 Volt Am p 250 250 -7 72 8 5,5 15 30 9 0 ' 3500 4,5 8 10 0,3 Volt Volt Volt mA mA »/« mA/V kQ

ah128g

Contextual Info: AH128 ¼W High Linearity InGaP HBT Amplifier Product Features • 60 – 3500 MHz • +24.6 dBm P1dB • +41.5 dBm Output IP3 • 16.6 dB Gain @ 2140 MHz • 115 mA current draw • +5V Single Supply • MTTF > 100 Years • Lead-free/Green/RoHS-compliant

smd code book 9u

Abstract: Lm 373 smd transistor cy CX 0461
Contextual Info: Golden DRAGON Lead Pb Free Product - RoHS Compliant LCW W5SM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 75 lm bei 350 mA bis zu 154 lm bei 1 A (3500 K) • Besonderheit des Bauteils: hocheffiziente