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    "MARKING CODE S1" TOSHIBA Search Results

    "MARKING CODE S1" TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    "MARKING CODE S1" TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    grm36

    Abstract: grm36 murata murata lot no TG2403CT capacitor DD series murata murata MA Series MURATA GRM36 DD12 MCR01 LQG15
    Text: TG2403CT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2403CT 1.9GHz Band TX Fronted IC PHS, Digital Cordless Telecommunication Features Common Block • Positive voltage operation: VDD1 = VDD2 = VDD3 = VDD4 = 3.0 V typ . • Small package: CST20 (2.9 mm * 3.9 mm * 0.48 mm)


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    PDF TG2403CT CST20 grm36 grm36 murata murata lot no TG2403CT capacitor DD series murata murata MA Series MURATA GRM36 DD12 MCR01 LQG15

    Untitled

    Abstract: No abstract text available
    Text: 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9 S (typ.)


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    PDF 2SK3443

    mj 773

    Abstract: 2SK3443
    Text: 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9 S (typ.)


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    PDF 2SK3443 mj 773 2SK3443

    K3389

    Abstract: k338 2SK3389
    Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


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    PDF 2SK3389 K3389 k338 2SK3389

    K3444

    Abstract: 2SK3444 SC-97
    Text: 2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


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    PDF 2SK3444 125oducts K3444 2SK3444 SC-97

    K3387

    Abstract: 2SK3387
    Text: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)


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    PDF 2SK3387 K3387 2SK3387

    "MARKING CODE S1" toshiba

    Abstract: No abstract text available
    Text: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)


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    PDF 2SK3387 "MARKING CODE S1" toshiba

    2SK3445

    Abstract: No abstract text available
    Text: 2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3445 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


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    PDF 2SK3445 2SK3445

    2SK3388

    Abstract: No abstract text available
    Text: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.)


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    PDF 2SK3388 2SK3388

    k3842

    Abstract: 2SK3842 regulator 48V
    Text: 2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII 2SK3842 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.) • High forward transfer admittance: |Yfs| = 93 S (typ.)


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    PDF 2SK3842 k3842 2SK3842 regulator 48V

    2SK3443

    Abstract: No abstract text available
    Text: 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9 S (typ.)


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    PDF 2SK3443 2SK3443

    2SK3387

    Abstract: K3387
    Text: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)


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    PDF 2SK3387 2SK3387 K3387

    K3439

    Abstract: 2SK3439
    Text: 2SK3439 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3439 DC-DC Converter Applications Relay Drive and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


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    PDF 2SK3439 K3439 2SK3439

    2SK3389

    Abstract: No abstract text available
    Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


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    PDF 2SK3389 2SK3389

    2SK3440

    Abstract: No abstract text available
    Text: 2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3440 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 6.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.)


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    PDF 2SK3440 2SK3440

    Untitled

    Abstract: No abstract text available
    Text: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.)


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    PDF 2SK3388

    Untitled

    Abstract: No abstract text available
    Text: 2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3445 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


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    PDF 2SK3445

    K3441

    Abstract: 2SK3441
    Text: 2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3441 DC-DC Converter Applications Relay Drive and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S (typ.)


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    PDF 2SK3441 K3441 2SK3441

    2SK3442

    Abstract: No abstract text available
    Text: 2SK3442 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3442 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) High forward transfer admittance: ⎪Yfs⎪ = 28 S (typ.)


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    PDF 2SK3442 2SK3442

    Untitled

    Abstract: No abstract text available
    Text: 2SK3439 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3439 DC-DC Converter Applications Relay Drive and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


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    PDF 2SK3439

    Untitled

    Abstract: No abstract text available
    Text: 2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3440 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 6.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.)


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    PDF 2SK3440

    Untitled

    Abstract: No abstract text available
    Text: 2SK4034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅢ 2SK4034 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 mΩ(typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.)


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    PDF 2SK4034

    2SK3442

    Abstract: No abstract text available
    Text: 2SK3442 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3442 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) High forward transfer admittance: ⎪Yfs⎪ = 28 S (typ.)


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    PDF 2SK3442 2SK3442

    2SK3388

    Abstract: No abstract text available
    Text: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.)


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    PDF 2SK3388 2SK3388