"P T Y P E" LASER DIODE Search Results

CHARACTERISTICS DIODE 10SI 10

Abstract: SY100EL1001 SY100EL1001ZC SY100EL1001ZCTR
Contextual Info: V LASER DIODE DRIVER w it h in p u t d f l i p - f l o p SYNERGY PRELIMINARY s y io o e l io o i SEMICONDUCTOR DESCRIPTION FEATURES Up to 1.2Gbit/s operation 75mA peak drive current T h e S Y 100E L1001 is a high s p e e d c u rre n t s o u rc e fo r d riving a s e m ico n d u cto r laser diode in o ptica l tran sm issio n

Contextual Info: TOSHIBA LASER DIODE OSHIBA LASER/FBR OPTIC ID I • ^7252 OülS'lbM ö ■ T 0 S b t T—41 —07 TENTATIVE TO SHIBA LASER DIODE, F4048 , is a GaAlAs t y p e l a s e r d iod e w ith a g la s s w indow . I t s p e a k em issio n w a v e l e n g t h is 810 nm

Contextual Info: Laser Diodes AIGaAs laser diode RLD-78MD T h e R L D -7 8 M D is a la s e r d io d e d e ­ •E x te r n a l dim ensions Unit: mm signed for minidisc playback. This d e ­ vice has low noise at high optical out­ (3) M put levels. t y P •A p p lic a tio n s

Contextual Info: V LASER DIODE DRIVER w ith o u t p u t e n a b le SYNERG Y PRELIMINARY s y io o e lio o 3 SEMICONDUCTOR DESCRIPTION FEATURES Up to 1.25Gb/s operation The SY100EL1003 is a high speed current source for driving a sem iconductor laser diode in optical transm ission

Contextual Info: V LASER DIODE DRIVER w ith o u t p u t e n a b le SYNERG Y PRELIMINARY s y io o e lio o 3 SEMICONDUCTOR DESCRIPTION FEATURES Up to 1.25Gb/s operation The SY100EL1003 is a high speed current source for driving a sem iconductor laser diode in optical transm ission

HE8811

Contextual Info: Section 2 Chip Structures 2.1 Laser Diodes Structures 2.1.1 G aA lA s LD Structure T h e p - ty p e a c tiv e la y e r , in w h i c h s t i m u l a t e d emission enforces optical amplification figure 2 - 1 (a , is processed first. The p-n junction is made

CHARACTERISTICS DIODE 10SI 10

Abstract: SY100EL1003ZC SY100EL1003 SY100EL1003ZCTR n type laser diode driver
Contextual Info: V LASER DIODE DRIVER w it h o u t p u t e n a b l e SYNERGY PRELIMINARY s y io o e l io o 3 SEMICONDUCTOR DESCRIPTION FEATURES Up to 1.2Gbit/s operation 75mA peak drive current T h e S Y 1 0 0 E L 1 0 0 3 is a high s p e e d c u rre n t s o u rc e fo r d riving a s e m ico n d u cto r laser diode in o ptica l tran sm issio n

780nm 5v 3mW laser diode model

Abstract: LT0H43M Sharp Hologram laser
Contextual Info: Hologram Lasers LT0H43M LT0H43M • Hologram Laser for X16 CD-ROM 3-beam Features (1) W ith b u ilt-in h ig h s p e e d O P IC *(T Y P .28M H z) for X 16 sp eed CD-ROM drive (2) V o lta g e o u t p u t ty p e ( E x t e r n a l n o i s e s o lu tio n is un n ecessary .)

RF2312

Abstract: ECUV1H221JCG panasonic ECU ECU-V1H104KBW P121 RF2312PCBA 1008CS-331XKBC ECU-V1H221JCG diode RF 302 1008CS-331-XKBC
Contextual Info: RF2312 R F E M M ICRO-DEVICES L IN E A R G EN E R A L PU RPO SE A M P L IF IE R • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations LINEAR CATV AM PLIFIERS T y p ic a l A p p lic a t io n s

Contextual Info: SONY C O R P / C O M P O N E N T PR O D S MIE D • fl3fl23fl3 Q D G S ñ T ñ ñ « S O N Y SONY. S GaAIAs Laser Diode t - Description The SLD111V is a tow-noise index guided laser diode developed for optical disk applications. L D 1 1 1 V H t - o s ' Package Outline

Contextual Info: « SYNERGY LASER DIODE DRIVER WITH INPUT D FLIP-FLOP PRELIMINARY SY100EL1001 SEMICONDUCTOR DESCRIPTION FEATURES Up to 1.25Gb/s operation 75mA peak drive current Separate modulation control Separate master reset for laser safety T h e S Y 100E L1001 is a high s p e e d c u rre n t s o u rc e fo r

Contextual Info: « SYNERGY LASER DIODE DRIVER WITH INPUT D FLIP-FLOP PRELIMINARY SY100EL1001 SEMICONDUCTOR DESCRIPTION FEATURES Up to 1.25Gb/s operation 75mA peak drive current Separate modulation control Separate master reset for laser safety T h e S Y 100E L1001 is a high s p e e d c u rre n t s o u rc e fo r

Contextual Info: P R E L IM IN A R Y D A T A S H E E T LASER DIODE NDL7910P 1 550 nm OPTICAL FIBER COMMUNICATIONS MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DESCRIPTION The NDL7910P is an E A modulator integrated 1 550 nm D FB-LD module for 2.5 Gb/s. The newly developed

Contextual Info: -r-y* To:. / / / -TOLD 120 / «Î017252 OülSñSfl 1 • TOSb OSHIBA LASER/FBR OPTIC | T E W T A T ÎV E TOSHIBA LASER DIODE, TOLD 120* Is a.GaALAs ty p e la s e r diode with a ; g la s s window . : . I ts peak em ission w a v e le n g th is 780 nmand maximum optical ou tp u t power is

Contextual Info: Laser diodes AlGaAs laser diode RLD-78MD The RLD-78MD is a laser diode designed for minidisc playback. This device has low noise at high optical output levels. FExternal dimensions Units: mm M t y p e FApplications Minidisc (MD) playback FFeatures 1) Optical output is high at 4 to 8 mW.

Laser-Diode

Abstract: RLD-78MD
Contextual Info: Laser diodes AlGaAs laser diode RLD-78MD The RLD-78MD is a laser diode designed for minidisc playback. This device has low noise at high optical output levels. FExternal dimensions Units: mm M t y p e FApplications Minidisc (MD) playback FFeatures 1) Optical output is high at 4 to 8 mW.

NDL7511P1

Contextual Info: N E C ELECTRONICS INC b2E D • b427S25 □ D 3 7 tì7D T2S « N E C E P R E L IM IN A R Y D A T A S H E E T M F " / / LASER DIODE MODULE N D L7501P, NDL7501P1 InGaAsP MQW -DC-PBH PULSED LASER DIODE M ODULE 1 310 nm OTDR APPLICATION DESCRIPTION NDL7501P and NDL7501P1 are 1 310 nm newly developed Multiple Quantum Well (MQW structure pulsed laser diode

RC30 resistor

Contextual Info: R F RF2312 H MICRO DEVICES LINEAR GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations P r o d u c t D e s c r ip tio n

Contextual Info: RF RF2360 Preliminary MICRO-DEVICES LINEAR GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations P r o d u c t D e s c r ip tio n

Contextual Info: RF RF2320 Preliminary MICRO-DEVICES LINEAR GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations P r o d u c t D e s c r ip tio n

ML6705N

Abstract: ld1 curves Q0141 AlGaAs laser diode x316
Contextual Info: MITSUBISHI LASER DIODES ML6XX5 SERIES A ^ vcf- F O R O P T I C A L IN FO R M A TIO N S Y S T E M S MITSUBISHI DISCRETE SC TYPE NAME 31E » bSMTñET G0141SÔ T MITS ''T-41-0S ML6705N DESCRIPTION FEATURES Mitsubishi's ML6XX5N are AlGaAs laser diodes having two

Contextual Info: P R E L IM IN A R Y DA TA S H E E T LA SER DIODE NDL7683P 1 310 nm OPTICAL CATV BROADCAST APPLICATION InGaAsP STRAINED MQW DFB PC LASER DIODE MODULE D ESC R IP T IO N The NDL7683P is a 1 310 nm DFB Distributed Feed-Back laser diode that has a newly developed Partially

Contextual Info: LASER DIODE INC BflE D • 5362^55 OODDSbO T « L A D r - «1 - ° n LDPM-XXXX SERIES ADVANCE SPECIFICATION WIDE BANDWIDTH PINAMP APPLICATIONS: FEATURES: o o o o o o o o Fi be r O p t i c D i g i t a l S y s t e m s Fiber O p t i c A n a l o g S y s t e m s

TRANSISTOR BC 158

Abstract: diode t25 4 a7 BC 547 PIN DIAGRAM cable tv amplifier CH-DIN RF2317 RF2317PCBA transistor BC 312 transistor BC 336
Contextual Info: R F E ii RF2317 M ICRO-DEVICES LINEAR CATV A M PLIFIER • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations LINEAR CATV AMPLIFIERS T y p ic a l A p p lic a tio n s