"POWER DIODE" 20A VF LESS 0.7 Search Results

Z3PK2045H

Contextual Info: ZOWIE Schottky Barrier Diode 45V / 20A Z3PK2045H OUTLINE DIMENSIONS Case : Z3PAK FEATURES * * * * * * Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF

Contextual Info: SBRT20U100SLP Green NEWINFORMATION PRODUCT ADVANCE Product Summary VRRM V IO (A) 100 20 20A TrenchSBR TRENCH SUPER BARRIER RECTIFIER POWERDI 5060 Features and Benefits VF(MAX) (V) @ +25°C 0.70 • IR(MAX) (mA) @ +25°C 0.3 Reduced ultra-low forward voltage drop (VF); better efficiency

Contextual Info: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

"Power Diode" 20A Vf less 0.7

Abstract: P1000 diode rectifier diode BY2000 F-1200 BY255 diode P1000 diode 20A Diode axial leads ultra low drop, high current diode P1000S SB15
Contextual Info: Diotec Products for Solar Modules Diodes for Bypass Operation „Low Vf“ Bipolar Diodes for Standard Modules P1200, F1200, FT2000 Reverse Voltage up to 200 V = more rugged against voltage spikes

Contextual Info: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

PBYR2040CT

Contextual Info: PBYR2035CT PBYR2040CT PBYR2045CT SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended for use in

20MT120UF

Abstract: diode 1000V 20a igbt 1200V 20A igbt 20A 1200v DIODE GE 20a "Power Diode" 20A Vf less 0.7 20MT120U
Contextual Info: Target Data 05/01 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: N ANER PHILIPS/DISCRETE 2SE D PBYR2035CT PBYR2040CT PBYR2045CT bb53*131 0022TL.7 2 M □ SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended for use in

Contextual Info: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

SMPS CIRCUIT DIAGRAM 5V 20A

Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Contextual Info: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

ultrafast diode 10a 400v

Abstract: X 0238 CE
Contextual Info: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

FMN-1206S

Contextual Info: Fast Recovery Diode FMN-1206S Mar/21/2011 Features Package The FMN-1206S is a fast recovery diode which realize a peak reverse voltage of 600V and a typical forward voltage drop of 1.1V optimizing a tradeoff between VF and trr. It has the characteristics suit for PFC circuit of

Contextual Info: Bulletin I27308 01/06 GB10RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 12A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

L500H

Contextual Info: Bulletin I27308 01/06 GB10RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 12A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

IC 0001 SPMS

Abstract: curve tracer equipment heat sink design guide, IGBT calculation of IGBT snubber Power PCB Relays FPAL20SM60-IGBT INVERTER 10kW mosfet 5kw high power rf spms 12 volt 1N4937
Contextual Info: Application Note 9018 May, 2002 Smart Power Module User’s Guide 8.Bootstrap Circuit 8.1 Operation of a Bootstrap Circuit The VBS voltage, which is the voltage difference between VB SPM pins 20, 25 and 29 and VS (SPM pins 21, 26 and 30), provides the supply to the HVICs within the SPM. This supply must

GB30RF60K

Abstract: ntc 901
Contextual Info: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

MBR20

Abstract: 071 0039
Contextual Info: Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Main Product Characteristics General Description High efficiency dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage

MBR20H100CTF-E1

Abstract: mbr20h100ct-e MBR20H100ctf
Contextual Info: Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER General Description MBR20H100C Main Product Characteristics High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where

Contextual Info: Bulletin I27152 06/03 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

k3525

Abstract: 8205 datasheet GB10RF120K ice25 ti marking AAB
Contextual Info: Bulletin I27152 Rev.A 07/03 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics