Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    "RF MOSFET CLASS AB Search Results

    "RF MOSFET CLASS AB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    "RF MOSFET CLASS AB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 4702

    Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
    Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts


    Original     		PDF IXZ210N50L IXZ2210N50L 175MHz IXZ210N50L 175MHz mosfet 4702 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942

    "RF MOSFETs"

    Abstract: "RF MOSFET" 731 MOSFET IXZ308N120 mosfet 440 mhz MOSFET RF POWER
    Text: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast


    Original     		PDF IXZ308N120 175MHz IXZ308N120 dsIXZ308N12 "RF MOSFETs" "RF MOSFET" 731 MOSFET mosfet 440 mhz MOSFET RF POWER

    "RF MOSFET" 300W

    Abstract: transistor tl 187 "RF MOSFETs" RF POWER MOSFET IXZ1210N50L 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf
    Text: IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 125V operating


    Original     		PDF IXZ12210N50L 175MHz 175MHz IXZ1210N50L dsIXZ12210N50L "RF MOSFET" 300W transistor tl 187 "RF MOSFETs" RF POWER MOSFET 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf

    Untitled

    Abstract: No abstract text available
    Text: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast


    Original     		PDF IXZ308N120 175MHz IXZ308N120 dsIXZ308N12

    IXZ318N50

    Abstract: No abstract text available
    Text: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V


    Original     		PDF IXZ318N50 IXZ318N50 dsIXZ318N50

    Arlon

    Abstract: MRF282
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1* MRF282ZR1* RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at


    Original     		PDF MRF282/D MRF282SR1* MRF282ZR1* DEVICEMRF282/D Arlon MRF282

    27271SL

    Abstract: MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications


    Original     		PDF MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 27271SL MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310

    transistor z4 n

    Abstract: NPN transistor mhz s-parameter mjd310 MRF282
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at


    Original     		PDF MRF282/D MRF282SR1 MRF282ZR1 MRF282/D transistor z4 n NPN transistor mhz s-parameter mjd310 MRF282

    MRF282

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at


    Original     		PDF MRF282/D MRF282SR1 MRF282ZR1 DEVICEMRF282/D MRF282

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    Original     		PDF MRF3010/D MRF3010 MRF3010 MRF3010/D

    j608

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 j608

    mosfet j142

    Abstract: J132 MOSFET MOSFET J132 mosfet J137 7 581 transistor motorola transistor z 0607 MOSFET J147
    Text: MOTOROLA Order this document by MRF6522–5/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 mosfet j142 J132 MOSFET MOSFET J132 mosfet J137 7 581 transistor motorola transistor z 0607 MOSFET J147

    MRF19030

    Abstract: 400S MRF19030R3 MRF19030SR3
    Text: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19030R3 MRF19030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with


    Original     		PDF MRF19030/D MRF19030R3 MRF19030SR3 MRF19030R3 MRF19030 400S MRF19030SR3

    motorola b34

    Abstract: MRF19090 56-590-65/3B 465B MRF19090S MRF19090SR3 T495X106K035AS4394 B34 motorola LAMBDA SEMICONDUCTORS
    Text: MOTOROLA Order this document by MRF19090/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S MRF19090SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with


    Original     		PDF MRF19090/D MRF19090 MRF19090S MRF19090SR3 MRF19090 MRF19090S motorola b34 56-590-65/3B 465B MRF19090SR3 T495X106K035AS4394 B34 motorola LAMBDA SEMICONDUCTORS

    MRF19030

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19030 MRF19030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to


    Original     		PDF MRF19030/D MRF19030 MRF19030S

    MRF19090

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19090/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.9 to


    Original     		PDF MRF19090/D MRF19090 MRF19090S MRF19090/D

    2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: MRF19030
    Text: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19030 MRF19030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to


    Original     		PDF MRF19030/D MRF19030 MRF19030S 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    MRF19090

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19090/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.9 to


    Original     		PDF MRF19090/D MRF19090 MRF19090S

    MRF19030

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to


    Original     		PDF MRF19030/D MRF19030 MRF19030R3 MRF19030S MRF19030SR3

    MRF19030

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to


    Original     		PDF MRF19030/D MRF19030 MRF19030R3 MRF19030S MRF19030SR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 4, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S004N MW6S004NT1

    64580

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 3, 4/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S004N MW6S004NT1 64580

    MW6S004N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 0, 1/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S004N MW6S004NT1 MW6S004N

    CG SERIES MALLORY CAPACITOR

    Abstract: gps mtbf
    Text: MOTOROLA O rder this docum ent by M RF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs D esigned fo r class A and class AB PCN and PCS base statio n ap plicatio ns at


    OCR Scan     		PDF RF282/D CG SERIES MALLORY CAPACITOR gps mtbf