"SCHOTTKY DIODE" SMPC Search Results
"SCHOTTKY DIODE" SMPC Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUHS15S60 |
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H |
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CUHS20F30 |
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Schottky Barrier Diode (SBD), 30 V, 2 A, US2H |
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CUHS15S40 |
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Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H |
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CUHS15S30 |
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Schottky Barrier Diode (SBD), 30 V, 1.5 A, US2H |
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CUHS10F60 |
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Schottky Barrier Diode (SBD), 60 V, 1 A, US2H |
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"SCHOTTKY DIODE" SMPC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Featured Product - TMBS
Abstract: TO-262AB "Schottky Diode" SMPC Trench MOS Schottky Rectifier SMA DO-214AB Vishay 45 V Trench MOS Barrier Schottky Rectifiers SMA SMB diode guide
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ITO-220AB DO-214AC O-220AB DO-214AA O-220AC DO-214AB 12-Jul-12 Featured Product - TMBS TO-262AB "Schottky Diode" SMPC Trench MOS Schottky Rectifier SMA DO-214AB Vishay 45 V Trench MOS Barrier Schottky Rectifiers SMA SMB diode guide | |
3 watt 70v zener diode
Abstract: inkjet print head interface K784P
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00V-600V; DO-220AA V-540V; V-440V DO-204AL DO-41) DO-204AC DO-15) 3 watt 70v zener diode inkjet print head interface K784P | |
Power MOSFET
Abstract: mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET
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Si4642DY SiE726DF 1-1500uF 47-680uF Power MOSFET mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET | |
5a6 zener diode
Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
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Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 | |
PV-ModuleContextual Info: PV-Module Table of Contents Concentrators, Bypass Diode. 3 Crystalline, Junction Box. 4 |
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1N5408 GP30M DO-201AD P600M O-277A PV-Module | |
Si4830
Abstract: Fast Switching mosfet SI3433B smd diode 615
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4110ppm 400ppm Q-101 BZX384 OD323 Si4830 Fast Switching mosfet SI3433B smd diode 615 | |
230V ac to 5V dc usb charger circuit
Abstract: SAMA5 RK3026 s3c2416 charger pad wide
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ACT2801 ACT2801C ACT2802 ACT2802C 230V ac to 5V dc usb charger circuit SAMA5 RK3026 s3c2416 charger pad wide | |
RK3026
Abstract: SAMA5 10w led diode charger pad wide REGULATOR sw 13003 10kk thermistor SC053
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ACT2801 ACT2802 ACT4501 ACT4523 RK3026 SAMA5 10w led diode charger pad wide REGULATOR sw 13003 10kk thermistor SC053 | |
Contextual Info: VISHAY DIODES RECTIFIERS, ABD TVS and Zener Diodes For Automotive Applications June 2013 VISHAY DIODES Automotive Applications ABD TVS Applications Rectifier Applications Load dump Second protection Freewheeling Polarity protection Signal line protection Rectification |
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D-001 J1113-11 J1455 TSC-7001 -55oC 175oC V10D45C V10D60C V30D45C V30D60C | |
vishay 1N4007 DO-214AC
Abstract: 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF
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VMN-SG2125-1009 vishay 1N4007 DO-214AC 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF | |
Contextual Info: TSPB10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSPB10U45S J-STD-020 2011/65/EU 2002/96/EC D1407011 | |
Contextual Info: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSPB15U50S J-STD-020 2011/65/EU 2002/96/EC D1407012 | |
Automobile Black Box
Abstract: Power Bank Freescale ACT2801 ACT2802 ACT8945A Atmel ACT8865 power management units high power
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ACT2801 ACT2801C ACT2802 ACT2802B Automobile Black Box Power Bank Freescale ACT8945A Atmel ACT8865 power management units high power | |
Contextual Info: TSP15U100S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSP15U100S J-STD-020 2011/65/EU 2002/96/EC O-277A D1309033 | |
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Contextual Info: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSPB15U50S J-STD-020 2011/65/EU 2002/96/EC D1408064 | |
Contextual Info: TSP12U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSP12U120S J-STD-020 2011/65/EU 2002/96/EC O-277A D1405080 | |
Contextual Info: TSPB15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSPB15U100S J-STD-020 2011/65/EU 2002/96/EC D1408051 | |
Contextual Info: TSP12U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSP12U120S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408044 | |
Contextual Info: TSP15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSP15U100S J-STD-020 2011/65/EU 2002/96/EC O-277A D1309033 | |
Contextual Info: TSP15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSP15U100S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408045 | |
Contextual Info: TSP15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSP15U100S J-STD-020 2011/65/EU 2002/96/EC O-277A D1309033 | |
Contextual Info: TSP10U100S thru TSP10U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSP10U100S TSP10U120S J-STD-020 2011/65/EU 2002/96/EC O-277A D1405061 | |
10U100
Abstract: TSP10U120S
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TSP10U100S TSP10U120S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408038 10U100 TSP10U120S | |
Contextual Info: TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSP15U50S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309033 |