"SOT-227 B" DIMENSIONS Search Results
"SOT-227 B" DIMENSIONS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MKZ6V2 |
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Zener Diode, 6.2 V, SOT-23 |
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| MSZ6V8 |
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Zener Diode, 6.8 V, SOT-346 |
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| MUZ20V |
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Zener Diode, 20 V, SOT-323 |
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| MKZ30V |
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Zener Diode, 30 V, SOT-23 |
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| MSZ36V |
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Zener Diode, 36 V, SOT-346 |
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"SOT-227 B" DIMENSIONS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: HUR2x30-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x30-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 |
Original |
HUR2x30-60 OT-227 | |
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Contextual Info: HUR2x30-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 400 HUR2x30-40 Symbol VRRM V 400 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 |
Original |
HUR2x30-40 OT-227 | |
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Contextual Info: HUR2x30-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x30-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 |
Original |
HUR2x30-60 OT-227 | |
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Contextual Info: HUR2x60-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x60-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 |
Original |
HUR2x60-60 OT-227 | |
100v 3A ultra fast recovery diodeContextual Info: HUR2x30-30 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 300 HUR2x30-30 Symbol VRRM V 300 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 |
Original |
HUR2x30-30 OT-227 100v 3A ultra fast recovery diode | |
TFR 600Contextual Info: HUR2x30-100, HUR2x30-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x30-100 HUR2x30-120 VRSM V 1000 1200 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B |
Original |
HUR2x30-100, HUR2x30-120 OT-227 HUR2x30-100 TFR 600 | |
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Contextual Info: HUR2x60-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x60-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 |
Original |
HUR2x60-60 OT-227 | |
|
Contextual Info: HUR2x100-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x100-40 VRSM V 400 Symbol VRRM V 400 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 |
Original |
HUR2x100-40 OT-227 | |
IRM 1200Contextual Info: HUR2x30-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 400 HUR2x30-40 Symbol VRRM V 400 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 |
Original |
HUR2x30-40 OT-227 IRM 1200 | |
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Contextual Info: HUR2x30-100, HUR2x30-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x30-100 HUR2x30-120 VRSM V 1000 1200 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B |
Original |
HUR2x30-100, HUR2x30-120 OT-227 | |
100v 3A ultra fast recovery diodeContextual Info: HUR2x30-30 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 300 HUR2x30-30 Symbol VRRM V 300 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 |
Original |
HUR2x30-30 OT-227 100v 3A ultra fast recovery diode | |
Epitaxial Diode FRED VRRM 1200 V 40 ns
Abstract: fast recovery diode 600v 120a
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Original |
HUR2x60-100, HUR2x60-120 OT-227 HUR2x60-100 Epitaxial Diode FRED VRRM 1200 V 40 ns fast recovery diode 600v 120a | |
DIODE 409Contextual Info: HUR2x100-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x100-40 VRSM V 400 Symbol VRRM V 400 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 |
Original |
HUR2x100-40 OT-227 DIODE 409 | |
sonic cleanerContextual Info: HUR2x60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x60-100 HUR2x60-120 VRSM V 1000 1200 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B |
Original |
HUR2x60-100, HUR2x60-120 OT-227 sonic cleaner | |
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Contextual Info: HUR2x60-30, HUR2x60-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 300 400 HUR2x60-30 HUR2x60-40 Symbol VRRM V 300 400 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 |
Original |
HUR2x60-30, HUR2x60-40 OT-227 HUR2x60-30 | |
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Contextual Info: Preliminary Technical Information IXFN40N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 34A Ω 260mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions |
Original |
IXFN40N110P 300ns OT-227 E153432 40N110P | |
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Contextual Info: Preliminary Technical Information IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 23A ≤ 390mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions |
Original |
IXFN26N100P 300ns OT-227 E153432 26N100P 3-07-A | |
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Contextual Info: Preliminary Technical Information IXFN30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 25A Ω 360mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions |
Original |
IXFN30N110P 300ns OT-227 E153432 30N110P | |
3188 diodeContextual Info: HUR2x60-30, HUR2x60-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 300 400 HUR2x60-30 HUR2x60-40 Symbol VRRM V 300 400 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 |
Original |
HUR2x60-30, HUR2x60-40 OT-227 3188 diode | |
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Contextual Info: Preliminary Technical Information IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1200V = 30A ≤ 350mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions |
Original |
IXFN30N120P 300ns OT-227 E153432 30N120P 1-07-A | |
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Contextual Info: Preliminary Technical Information IXFN38N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 38A ≤ 210mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions |
Original |
IXFN38N100P 300ns OT-227 E153432 38N100P 8-23-07-B | |
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Contextual Info: Preliminary Technical Information IXFN44N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 37A ≤ 220mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions |
Original |
IXFN44N100P 300ns OT-227 E153432 44N100P 8-27-07-B | |
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Contextual Info: Preliminary Technical Information IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 460mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions |
Original |
IXFN26N120P 300ns OT-227 E153432 26N120P 1-07-A | |
IXFN64N50PD2
Abstract: 64N50P SOT227B package 64N50
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Original |
IXFN64N50PD2 IXFN64N50PD3 OT-227 E153432 200ns 64N50P IXFN64N50PD2 SOT227B package 64N50 | |