*2F MARKING Search Results

*2F MARKING Result Highlights (5)

Part	Manufacturer	Description
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)
UHD503R/883	Rochester Electronics LLC	UHD503R/883 - Dual marked (5962-8855101CA)

*2F MARKING Price and Stock

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Sensata Circuit Breakers UPG1-1-42F-502-01 Circuit Breaker - One Handle Per Unit - Single Pole - 400Hz Long Delay - 5A - Quick-Connect Terminals - Black w/ White Markings.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	UPG1-1-42F-502-01		45			1 $44.02 10 $38.57 100 $31.51 1000 $29.46 10000 $29.46	Buy Now
Sensata Circuit Breakers IELK1-1-52F-7.50-01-V Circuit Breaker Hydraulic Magnetic - One Handle Per Unit - Single Pole - Stud Terminals - DC Long Delay - 7.5A - Black With I/O Markings.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	IELK1-1-52F-7.50-01-V		42			1 - 10 $79.59 100 $53.92 1000 $46.14 10000 $46.14	Buy Now
Sensata Circuit Breakers IELK1-1-52F-.500-01-V Circuit Breaker Hydraulic Magnetic - One Handle Per Unit - Single Pole - Stud Terminals - DC Long Delay - 0.5A - Black With I/O Markings.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	IELK1-1-52F-.500-01-V		30			1 - 10 $74.3 100 $59.87 1000 $48.16 10000 $48.16	Buy Now

*2F MARKING Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PG12FBUSC Abstract: No abstract text available Text: SEMICONDUCTOR PG12FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking 2 2 0 1 2F 1 1 No. Item Marking Description Device Mark 2F PG12FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	PDF	PG12FBUSC PG12FBUSC
PG12FBUSV Abstract: No abstract text available Text: SEMICONDUCTOR PG12FBUSV MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 2F 1 2 3 No. Item Marking Description Device Mark 2F PG12FBUSV hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index	Original	PDF	PG12FBUSV PG12FBUSV
Iron Circuit Diagram Abstract: DS21G DS23G MST02 westinghouse transformer DS171G WP832 DS266 WP930 5-20R Gang Receptacles Text: 38-39.qxp 8/11/2010 10:28 AM Page 39 Covers for Cast Iron or Aluminum Device Boxes 2F Single Gang 2F Ordering Information Blank cover for enclosing splices and taps where device not used. Description Material Cat. # Surface Flush Sheet aluminum Sheet steel	Original	PDF	DS100 DSS100 DS24G FS031 GASK91 EXF11 EXF21 C3310 Iron Circuit Diagram DS21G DS23G MST02 westinghouse transformer DS171G WP832 DS266 WP930 5-20R Gang Receptacles
ir1f Abstract: 10MQ040N 10MQ100N 2f marking code 036 marking diode ir1f 10MQ060N 15MQ040N 9749 1F marking Text: SMA PART MARKING PART NUMBER EXAMPLES Example: 10MQ040N INTERNATIONAL RECTIFIER IDENTIFICATION PART NUMBER IR1F 9749 CATHODE BAND SIDE 1F = 10MQ040N 1H = 10MQ060N 1J = 10MQ100N 2F = 15MQ040N DATE CODE YYWW YY = YEAR WW = WEEK	Original	PDF	10MQ040N 10MQ060N 10MQ100N 15MQ040N ir1f 10MQ040N 10MQ100N 2f marking code 036 marking diode ir1f 10MQ060N 15MQ040N 9749 1F marking
marking 2f 3 Abstract: MMBT2222A MMBT2907A marking 2f Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR	Original	PDF	OT-23 MMBT2907A MMBT2222A) -10mA -500mA -150mA -15mA -500mA -50mA marking 2f 3 MMBT2222A MMBT2907A marking 2f
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR	Original	PDF	OT-23 MMBT2907A OT-23 MMBT2222A) Temperature-10V -10mA -500mA -150mA -15mA -500mA
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F	Original	PDF	OT-23 MMBT2907A OT-23 MMBT2222A) -500mA -150mA -15mA -500mA -50mA
CMBT2907 Abstract: CMBT2907A Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS	Original	PDF	OT-23 CMBT2907 CMBT2907A 500mA; C-120 CMBT2907 CMBT2907A
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS	Original	PDF	OT-23 CMBT2907 CMBT2907A 500mA; C-120
2SA1037KGP Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD 2SA1037KGP SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 SOT-23 .055 (1.40) .047 (1.20) MARKING * 2F- .019 (0.50) (2) .103 (2.64)	Original	PDF	2SA1037KGP OT-23) OT-23 150mW 120mW 2SA1037KGP
CMBT2907 Abstract: CMBT2907A Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm	Original	PDF	ISO/TS16949 OT-23 CMBT2907 CMBT2907A 500mA; C-120 CMBT2907 CMBT2907A
2F PNP SOT23 Abstract: marking 2f 2f transistor SOt23 Text: MMBT2907A SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted)	Original	PDF	MMBT2907A OT-23 OT-23 MMBT2222A) -150mA -15mA -10mA -500mA 2F PNP SOT23 marking 2f 2f transistor SOt23
BC849 Abstract: BC849B BC849C BC850 BC850B BC850C Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS	Original	PDF	ISO/TS16949 OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC849B BC849C BC850 BC850B BC850C
2f bc850 Abstract: BC849 BC849B BC849C BC850 BC850B BC850C Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G	Original	PDF	OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C 2f bc850 BC849 BC849B BC849C BC850 BC850B BC850C

pnp 2f Abstract: No abstract text available Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR	Original	PDF	MMBT2907A MMBT2907A OT-23 QW-R206-030 pnp 2f
pnp 2f Abstract: marking 2F Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 1 2 MARKING 3 2F SOT-323 1:EMITTER 2:BASE 3:COLLECTOR	Original	PDF	MMBT2907A MMBT2907A OT-323 QW-R220-001 pnp 2f marking 2F
JESD79-2B Abstract: CR88 DDR2-667 STLS2E02 STLS2F01 1013tdi Text: STLS2F02-LP high performance 64-bit superscalar MIPS Loongson 2F microprocessor Preliminary Data Features • 64-bit superscalar architecture ■ 800 MHz clock frequency ■ Single/double precision floating-point units ■ New streaming multimedia instruction set	Original	PDF	STLS2F02-LP 64-bit DDR2-667 27x27 JESD79-2B CR88 STLS2E02 STLS2F01 1013tdi
JESD79-2B Abstract: 0x01000202 CR88 DDR2-667 STLS2E02 STLS2F01 Loongson Text: STLS2F02-LP high performance 64-bit superscalar MIPS Loongson 2F microprocessor Preliminary Data Features • 64-bit superscalar architecture ■ 800 MHz clock frequency ■ Single/double precision floating-point units ■ New streaming multimedia instruction set	Original	PDF	STLS2F02-LP 64-bit DDR2-667 27x27 JESD79-2B 0x01000202 CR88 STLS2E02 STLS2F01 Loongson
MARKING 2F SOT23 Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3 Text: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	PDF	BC850 OT-23 MARKING 2F SOT23 sot23 marking 2f 2f bc850 BC850 marking 2f 3
CMBT2907 Abstract: CMBT2907A Text: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_	OCR Scan	PDF	CMBT2907 CMBT2907A CMBT2907 500mA; 150mA; CMBT2907A
Untitled Abstract: No abstract text available Text: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4	OCR Scan	PDF	CMBT2907 CMBT2907A 150mA;
Untitled Abstract: No abstract text available Text: OIL CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F JS.O 2.8 0»14 0.48 038 3 Pin configuration 1 = BASE 2 * EMITTER 2.6 2.4 3 = COLLECTOR	OCR Scan	PDF	CMBT2907 CMBT2907A CMBT2907 150mA;
BC850 Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850 Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER	OCR Scan	PDF	BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC850 BC850B BCS49 BC849B BC849C BC850C 8C850
MARKING 7A SOT89 Abstract: SXT2907 SXT2907A T2907A Text: SIEMENS PNP Silicon Switching Transistor SXT 2907 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings	OCR Scan	PDF	Q68000-A8300 OT-89 EHP00899 MARKING 7A SOT89 SXT2907 SXT2907A T2907A

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*2F MARKING Search Results

*2F MARKING Result Highlights (5)

*2F MARKING Price and Stock

Sensata Circuit Breakers UPG1-1-42F-502-01

Sensata Circuit Breakers IELK1-1-52F-7.50-01-V

Sensata Circuit Breakers IELK1-1-52F-.500-01-V

*2F MARKING Datasheets Context Search

PG12FBUSC

PG12FBUSV

Iron Circuit Diagram

ir1f

marking 2f 3

Untitled

Untitled

CMBT2907

Untitled

2SA1037KGP

CMBT2907

2F PNP SOT23

BC849

2f bc850

pnp 2f

pnp 2f

JESD79-2B

JESD79-2B

MARKING 2F SOT23

CMBT2907

Untitled

Untitled

BC850

MARKING 7A SOT89