*5BS* TRANSISTOR Search Results

Q62702-C2325

Contextual Info: SIEMENS BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain * Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN 2 Q62702-C2325 1 =B BC 807-25W 5Bs Q62702-C2326

5Cs transistor

Abstract: 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs
Contextual Info: BC807./ BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN Type Marking Pin Configuration BC807-16

transistor 5cs

Abstract: marking 5Cs BC807 BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W BC817
Contextual Info: BC807./BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN • Pb-free (RoHS compliant) package 1)

C1735

Abstract: Q62702-C1735 d2495 ic 807 Q62702-C1689 Q62702-C1504 Q62702-C1692 Q62702-C1721 Q62702-C1736 marking 5Cs
Contextual Info: PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code Pin Configuration

Q62702-C1689

Abstract: ic 807 QBC807 Q62702-C1504 Q62702-C1692 Q62702-C1721 Q62702-C1735 Q62702-C1736 marking code 359 sot-23 marking code BC
Contextual Info: PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN 2 3 1 Type Marking Ordering Code Pin Configuration

transistor 5bs

Abstract: 5BS transistor GSA1576A GSC4081
Contextual Info: ISSUED DATE :2005/02/18 REVISED DATE : GSC4081 NPN EPITAXIAL PLANAR TRANSISTOR Description The GSC4081 is designed for use in driver stage of AF amplifier and general purpose amplification. Features Low Cob. Cob=2.0 pF Typ. Complements the GSA1576A Package Dimensions

5Cs transistor

Abstract: BC 170 transistor TRANSISTOR BC 807w Q62702-C2328
Contextual Info: PNP Silicon AF Transistor ● ● ● ● ● BC 807W BC 808W For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817W, BC 808W NPN 2 3 1 Type BC 807-16W BC 807-25W BC 807-40W

Contextual Info: BD675, BD675A, BD677, BD677A BD679, BD679A, BD681 CDIL BD675, 675A, 677, 677A, 679, 679A, 681 NPN PLASTIC POWER TRANSISTORS, Medium Power Darlingtons Complementary BD676, 676A, 678, 678A, 680, 680A, 682 PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM

transistors BC 457

Abstract: BC 458 BC 459 transistors BC 458 transistors BC 458 pnp ic 807 marking 5cs bc 457 5Bs sot-23
Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code PinCionfiguration

Contextual Info: BC807U PNP Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2

MARKING 1B SOT23

Abstract: 5As SOT23 1B SOT23 5cs sot23 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-40
Contextual Info: BC807, BC808 PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E

807u

Abstract: 3CMA EHA07175
Contextual Info: BC 807U PNP Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2

5Cs transistor

Abstract: transistor 5bs 5BS transistor
Contextual Info: SIEMENS BC 807W BC 808W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration

marking 5bs

Abstract: BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W
Contextual Info: BC807W, BC808W PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking Package

Contextual Info: SIEMENS PNP Silicon AF Transistors BC 807 BC 808 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code PinCionfigur ation

5Cs transistor

Abstract: Q62702-C2328 C2328 transistor C2330 transistor 5cs transistor 5bs Q62702-C2330 c2330 1B marking transistor TRANSISTOR C2328
Contextual Info: BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration Package

BC807U

Abstract: transistor 5bs SC74
Contextual Info: BC807U PNP Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2

5BS transistor

Contextual Info: Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.

5Bs sot-23

Abstract: marking 5bs 3CMA
Contextual Info: BC 807, BC 808 PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Comlementary types: BC 817, BC 818 NPN 1 Type Marking Pin Configuration BC 807-16

Contextual Info: BC807, BC808 PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33
Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration

Contextual Info: BC807W, BC808W PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking

BC807

Contextual Info: BC807U PNP Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2

Contextual Info: BC807, BC808 PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E