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08XAF-2S
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JST Manufacturing
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Cconnector HOUSING XAF POS 2.5MM |
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69.41KB |
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08-XC62H
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Unknown
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88.04KB |
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HIRP1608XC09-H5
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CT Micro International Corporation
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SMD type 800nm infrared emitter with GaAlAs LED, peak wavelength at 800nm, radiant intensity of 2.5 to 4.7 mW/sr at 20mA, viewing angle ±37.5 degrees, and RoHS compliant. |
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RP1608X06-B30
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CT Micro International Corporation
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SMD type red emitter LED with peak wavelength of 620 nm, luminous intensity of 360 to 720 mcd at 20 mA, viewing angle of ±65 degrees, and forward voltage of 1.6 to 2.6 V, housed in a miniature surface mount package. |
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DIO7708X400
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Dioo Microcircuits Co Ltd
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300mA low dropout linear voltage regulator with 2.5V to 15V input range, fixed 4.0V output, ultra-low quiescent current of 3µA, and stable operation with 1µF ceramic capacitors in SOT89-3 or SOT23-5 packages. |
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YP1608X09-G0
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CT Micro International Corporation
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SMD Type Yellow Emitter YP1608X09-G0 with AlGaInP LED, dominant wavelength 590nm, luminous intensity 1000-1800 mcd at 20mA, viewing angle ±30 degrees, forward voltage 1.7 to 3.0V, RoHS compliant. |
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BP1608X09-G0
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CT Micro International Corporation
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SMD type blue emitter LED with peak wavelength of 452 nm, 30 mA continuous forward current, luminous intensity of 165 mcd at 5 mA, and viewing angle of ±30 degrees. |
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JST08X-1100CW
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Jiangsu JieJie Microelectronics Co Ltd
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8 A TRIAC in TO-220F insulated package with 1100 V repetitive peak off-state voltage, suitable for AC switching applications including inductive loads, featuring 2000 VRMS rated insulation voltage and RoHS compliance. |
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IRP1608X08-B30
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CT Micro International Corporation
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SMD type 940nm infrared emitter with GaAlAs LED, peak wavelength at 940nm, radiant intensity of 2.1 mW/sr at 20mA, viewing angle ±65 degrees on X axis, and RoHS compliant. |
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HIRP1608XS08-B30
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CT Micro International Corporation
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SMD 850nm infrared emitter in a miniature package with peak wavelength at 850nm, radiant intensity of 1.5 to 8.0 mW/sr, viewing angle up to ±70 degrees, and forward voltage of 2.4 to 3.5V, suitable for infrared sensor applications. |
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SIRP1608X09-H5
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CT Micro International Corporation
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SMD type 880nm infrared emitter in a miniature package with peak wavelength of 880nm, radiant intensity of 4.0 to 7.4 mW/sr at 20mA, viewing angle of ±37.5 degrees, and RoHS compliant. |
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GP1608X06-B30
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CT Micro International Corporation
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SMD-type InGaN green LED with 525 nm dominant wavelength, 700–1100 mcd luminous intensity at 20 mA, ±65° X-axis viewing angle, and 1.9–3.4 V forward voltage, housed in a miniature package compliant with RoHS standards. |
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GP1608X09-H5
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CT Micro International Corporation
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SMD type green emitter LED with 525 nm dominant wavelength, 20 mA continuous forward current, luminous intensity of 2800 to 5200 mcd at 20 mA, and viewing angle of ±37.5 degrees, compliant with RoHS and IEC 62471 standards. |
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NCE3008XM
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NCEPOWER
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NCE3008XM is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 8A continuous drain current, and low on-resistance of 33mΩ at 2.5V gate voltage, suitable for battery protection and switching applications in SOT-89-3L surface mount package. |
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FIRP1608X09-H5
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CT Micro International Corporation
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SMD type infrared emitter with 750nm peak wavelength, GaAlAs LED, ±37.5 degree viewing angle, 20mA test current, 1.4V typical forward voltage, and RoHS compliance. |
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SH367008X/038XY-AAD01
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Sinowealth Electronic Ltd
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Lithium battery pack protection chip with overcharge, overdischarge, overcurrent, short-circuit, and temperature protection; supports 3 to 15 series cells, features built-in delay circuits, balancing function, and low power consumption down to 15uA. |
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GP1608X08-B30
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CT Micro International Corporation
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SMD Type Green Emitter GP1608X08-B30 is an InGaN LED with dominant wavelength 525 nm, luminous intensity 500 to 1100 mcd at 20 mA, viewing angle ±65 degrees X axis, and forward voltage 1.9 to 3.4 V. |
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IRP1608XB09-H5
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CT Micro International Corporation
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SMD type 970nm infrared emitter with GaAlAs LED, peak wavelength at 970nm, radiant intensity of 2.5 to 4.5 mW/sr at 20mA, viewing angle ±37.5 degrees, and RoHS compliant. |
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JST08X-800CW
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Jiangsu JieJie Microelectronics Co Ltd
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8 A TRIAC with 800 V repetitive peak off-state and reverse voltage, suitable for AC switching in inductive loads, featuring a TO-220F insulated package and RMS on-state current of 8 A. |
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NCE2308X
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NCEPOWER
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NCE2308X is a channel enhancement mode power MOSFET with 60V drain-source voltage, 3A continuous drain current, and low on-state resistance of 78mΩ at VGS=10V, suitable for battery protection and switching applications. |
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HIRP1608XC09-H5
