AK2301D
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK2301D with -20V drain-source voltage, -2A continuous drain current, RDS(ON) less than 160mΩ at VGS=-2.5V, and low gate charge for load switch and PWM applications in SOT-23 package. |
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NCE2301D
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -20V drain-source voltage, -2A continuous drain current, RDS(ON) less than 160mΩ at VGS=-2.5V, available in SOT-23 package. |
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UM3301DT3
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Leiditech
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UM3301DT3 is a low voltage TVS protection diode in SOT-23 package with 3.3V operating voltage, ultra low leakage in nA range, 1200W peak pulse power (8/20µs), and ±30kV ESD protection. |
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P1301DM
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Jiangsu JieJie Microelectronics Co Ltd
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Pxxx1DM is a semiconductor device designed for transient surge protection, featuring peak off-state voltage up to 120V or 170V, fast ns-level response, 50A repetitive peak pulse current, and SOD-123FL package. |
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SF301DS
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AK Semiconductor
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Surface Mount Superfast Recovery Rectifier in TO-252(D-PAK), 3A average forward current, 100 to 600V repetitive peak reverse voltage, 35ns maximum reverse recovery time, glass passivated junction. |
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US301DS
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AK Semiconductor
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Surface mount ultrafast recovery rectifier in TO-252 package with reverse voltage ratings from 100 to 1000 V, 3 A forward current, low forward voltage drop, and reverse recovery time of 50 to 75 ns. |
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G301DS
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AK Semiconductor
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Surface mount silicon rectifier in TO-252 package with 3A average forward current, reverse voltage ratings from 100V to 1000V, low forward voltage drop of 1.1V, and glass passivated junction for reliability.Surface Mount General Purpose Silicon Rectifiers in TO-252 package with reverse voltage ratings from 100 to 1000 V, 3A forward current, low forward voltage drop, and glass passivated junction.Surface mount silicon rectifier in TO-252 package with 3A forward current, reverse voltage ratings from 100V to 1000V, low forward voltage drop, glass passivated junction, and operating temperature range of -55°C to +150°C.Surface mount silicon rectifier in TO-252 package with 3A average forward current, reverse voltage ratings from 100V to 1000V, low forward voltage drop of 1.1V, glass passivated junction, and operating temperature range of -55°C to +150°C. |
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SI2301DS-T1-GE3
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VBsemi Electronics Co Ltd
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P-Channel 20V -5A MOSFET in SOT-23 package with RDS(on) of 35mΩ at VGS = -10V, featuring trench technology, suitable for load switches, PA switches, and DC/DC converters. |
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WSDY3301D
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Winsemi Microelectronics
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Single-cell lithium-ion/polymer battery protection IC with integrated 55 mΩ MOSFET, overcharge, overdischarge, overcurrent, and short-circuit protection, 0.9 uA operating current, available in SOT23-5L package. |
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AK2301D
