SH79F1612AM
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Sinowealth Electronic Ltd
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8-bit 8051-compatible microcontroller with 16KB Flash, 256-byte internal RAM, 768-byte external RAM, 10-bit ADC, and multiple I/O interfaces in a 20-pin SOP/TSSOP package. |
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JMSL0612AG
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in PDFN5x6-8L package with 9.5 mΩ typical RDS(ON) at VGS = 10V, 34 A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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SH79F1612AX
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Sinowealth Electronic Ltd
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8-bit 8051-compatible microcontroller with 16KB Flash, 256-byte internal RAM, 768-byte external RAM, 10-bit ADC, and multiple I/O interfaces in a 20-pin SOP/TSSOP package. |
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JMSL0612AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V 9.9mΩ N-Ch Power MOSFET in TO-252-3L package, featuring low RDS(ON), low gate charge, 57A continuous drain current, and AEC-Q101 qualification for automotive applications. |
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JMSL0612AUQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in PDFN3x3-8L package with 10.0 mΩ typical RDS(ON) at VGS = 10 V, 36 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JCT612A
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, 2500 VRMS rated insulation, TO-220A package, high dV/dt immunity, suitable for solid state relays, power chargers, and motor applications. |
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JCT612A-FO
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Jiangsu JieJie Microelectronics Co Ltd
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Silicon Controlled Rectifier (SCR) JCT612A-FO with 600V repetitive peak off-state voltage, 12A RMS on-state current, 3 to 6mA gate trigger current, TO-220A insulated package, 2500V RMS insulation voltage, and high dv/dt capability. |
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SH79F1612AX/020XU
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Sinowealth Electronic Ltd
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8-bit microcontroller compatible with 8051, featuring 16KB Flash memory, 256 bytes internal RAM, 768 bytes external RAM, 10-bit ADC, dual UARTs, PWM timer, and multiple power-saving modes. |
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SH79F1612AM/020MU
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Sinowealth Electronic Ltd
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8-bit microcontroller with 16KB Flash memory, 256B internal RAM, 768B external RAM, 10-bit ADC, dual UARTs, PWM timer, and low-voltage detection, operating at 2.8V to 5.5V. |
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JMSL0612AU
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in PDFN3x3-8L package with 10.0 mΩ typical RDS(ON) at 10 V VGS, 38 A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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JMSL0612AK
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-Ch Power MOSFET in TO-252-3L package with 9.9 mΩ RDS(ON) at VGS = 10V, 52 A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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JMSL0612AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in PDFN5x6-8L package with 9.5 mΩ RDS(ON) at 10 V VGS, 52 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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SH79F1612AM
