|
70D
|
|
Ferraz Shawmut
|
5A:125V:Telecommunications |
Original |
PDF
|
639.9KB |
5 |
|
70D
|
|
International Timing Technology
|
Electromechanical Filter 70 MHz BPF, 3 dB IL, 1 dB Inband ripple |
Original |
PDF
|
153.18KB |
2 |
|
70D00000Z
|
|
Littelfuse
|
Alarm Indicating Fuse |
Original |
PDF
|
101.82KB |
1 |
|
70D00103
|
|
Storm Interface
|
Switches - Accessories - KEYPAD KEYTOP LEG SET D NONILLUM |
Original |
PDF
|
348.92KB |
|
|
70D-5010
|
|
Midwest Components
|
Discharge varistors |
Scan |
PDF
|
242.73KB |
2 |
|
70D-5A
|
|
Cooper Bussmann
|
Fuses, 300VDC -1/10-10A Telpower Indicating Fuses |
Original |
PDF
|
49.72KB |
2 |
RF-WNB170DS-DD
|
|
REFOND
|
White LED in 2.0mm x 1.25mm x 0.7mm package, fabricated with blue chip and phosphor, featuring viewing angle of 140 degrees, forward voltage range 2.6V to 3.5V, luminous intensity 400 to 900 mcd at 20mA, and moisture sensitivity level 3. |
Original |
PDF
|
|
|
|
2EZ170D5L
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6V to 200V zener voltage range, low leakage current, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-15 package, 2.0W power dissipation, 3.6 to 200V zener voltage range, with ±5% or ±10% tolerance options, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode in DO-15 package, 2.0W power dissipation, 3.6V to 200V zener voltage range, ±5% or ±10% tolerance, low leakage current, high reliability, operating junction temperature up to +175°C.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, 60K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, low leakage current, and operating junction temperature from -55 to +175°C. |
Original |
PDF
|
|
|
|
NCE60P70D
|
|
NCEPOWER
|
NCE60P70D is a -60V, -70A trench technology power MOSFET with low RDS(ON) of 15mΩ at VGS=-10V, designed for high-density switching applications, offering low gate charge and excellent thermal performance in TO-263-2L package. |
Original |
PDF
|
|
|
|
3EZ170D5L
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon zener diode with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and DO-15 package.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package.Axial leaded silicon Zener diode 3EZ3.9D5L to 3EZ400D5L with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and DO-15 package.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package.Axial leaded silicon Zener diodes with power dissipation of 3.0W, voltage range from 3.9V to 400V, low leakage current, high reliability, and complete series from 3EZ3.9D5L to 3EZ400D5L.Axial leaded silicon Zener diode 3EZ3.9D5L with 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, and ±5% tolerance, suitable for general purpose regulation and protection applications.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package. |
Original |
PDF
|
|
|
|
GPK75HF170D1
|
|
CREATEK Microelectronics
|
34mm half bridge IGBT module with 1700V collector-emitter voltage, 75A continuous collector current, 2.4V collector-emitter saturation voltage at 150°C, and integrated gate resistor, designed for motor drives and inverters. |
Original |
PDF
|
|
|
|
3EZ270D5
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, voltage range 3.9 to 400V, low leakage current, high reliability, and ±5% tolerance indicated by suffix 5.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, and ±5% tolerance option, suitable for high reliability applications.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, voltage range 3.9 to 400V, low leakage current, high reliability, and ±5% tolerance option. |
Original |
PDF
|
|
|
|
GPK600SG170D2
|
|
CREATEK Microelectronics
|
62mm single tube IGBT module with 1700V collector-emitter voltage, 600A continuous collector current, low VCE(sat) of 2.5V at 600A, and integrated freewheeling diode for motor drives and inverters. |
Original |
PDF
|
|
|
|
GPK300HF170D2
|
|
CREATEK Microelectronics
|
1700V 300A IGBT module in a 62mm D2 plastic package, featuring low VCE(sat) of 2.4V at 300A, excellent current sharing in parallel operation, and high short circuit ruggedness, suitable for motor drives, UPS, and inverter applications. |
Original |
PDF
|
|
|
|
|
|
CG170D
|
|
CREATEK Microelectronics
|
CG170D is a dual programmable thyristor surge suppressor in SOP-8 package, featuring a repetitive peak gate-cathode voltage of -167 V, peak pulse current of 30 A for 10/1000 us surge, and low gate trigger current of 5 mA max. |
Original |
PDF
|
|
|
|
3EZ170D5
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, voltage range 3.9 to 400V, low leakage current, high reliability, and ±5% tolerance indicated by suffix 5.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, and ±5% tolerance option, suitable for high reliability applications.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, voltage range 3.9 to 400V, low leakage current, high reliability, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, and ±5% tolerance indicated by suffix ""5"".Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, operating voltage range 3.9 to 400V, low leakage current, high reliability, and ±5% tolerance indicated by suffix ""5"". |
Original |
PDF
|
|
|
|
3EZ270D5L
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon zener diode with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and DO-15 package.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package.Axial leaded silicon Zener diode 3EZ3.9D5L to 3EZ400D5L with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and DO-15 package.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package.Axial leaded silicon Zener diodes with power dissipation of 3.0W, voltage range from 3.9V to 400V, low leakage current, high reliability, and complete series from 3EZ3.9D5L to 3EZ400D5L.Axial leaded silicon Zener diode 3EZ3.9D5L with 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, and ±5% tolerance, suitable for general purpose regulation and protection applications.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package. |
Original |
PDF
|
|
|
|
AKP1570D
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET with 150V VDS, 70A ID, 13.5mΩ RDS(on) at VGS=10V, optimized for high-frequency switching and synchronous rectification, featuring low gate charge and 175°C operating temperature. |
Original |
PDF
|
|
|
|
GPK450HF170D9
|
|
CREATEK Microelectronics
|
1700V 450A IGBT module in D9 plastic package with low VCE(sat) of 2.4V, featuring high short circuit ruggedness, optimized for motor drives, inverters, UPS systems, and wind turbines, with RoHS compliance and UL 94 V-0 flammability rating. |
Original |
PDF
|
|
|
|
CTP01110-070D
|
|
JWD
|
SMT Current Sense Transformer CTEP1110-XXXD EP10 SMD Platform-Series for switch-mode power supplies, with 30 A sensing capability, frequency range of 25 kHz to 250 kHz, low primary resistance, operating temperature from -40 C to 125 C, and RoHS compliant. |
Original |
PDF
|
|
|
RF-WNB170DS-DD
