KM416V4104BS |
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Samsung Electronics
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KM416V4104BS 4M x 16-Bit CMOS Dynamic RAM With Extended Data Out Organization = 4Mx16 Mode = Edo Voltage(V) = 3.3 Refresh = 4K/64ms Speed(ns) = 50,60 Package = 50TSOP2 Power = Normal,low Production Status = Eol Comments = - |
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819.07KB |
36 |
KM416V4104BS-45 |
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Samsung Electronics
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
Original |
PDF
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819.07KB |
36 |
KM416V4104BS-5 |
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Samsung Electronics
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
Original |
PDF
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819.07KB |
36 |
KM416V4104BS-6 |
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Samsung Electronics
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
Original |
PDF
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819.07KB |
36 |
KM416V4104BS-L-45 |
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Samsung Electronics
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
Original |
PDF
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819.07KB |
36 |
KM416V4104BSL-45 |
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Samsung Electronics
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Original |
PDF
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819.08KB |
36 |
KM416V4104BS-L-5 |
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Samsung Electronics
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
Original |
PDF
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819.07KB |
36 |
KM416V4104BSL-5 |
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Samsung Electronics
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Original |
PDF
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819.08KB |
36 |
KM416V4104BS-L-6 |
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Samsung Electronics
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
Original |
PDF
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819.07KB |
36 |
KM416V4104BSL-6 |
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Samsung Electronics
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Original |
PDF
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819.08KB |
36 |