.318 SOT23 Search Results

t6661

Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
Contextual Info: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel

MTS105

Abstract: MMBTS105 MTS103 MMBTS102 5C sot23 MMBTS103 MTS102
Contextual Info: SENSORS continued % /I/II/ Case 29-02 t Case 318-02 li(l I TO-226AC | (SOT23) u (TO-92) - tem perature Sensors Solid-state tem perature sensing devices designed for use in extreme tem perature ranges requiring high accuracy and

y6 zener

Abstract: 338 zener 8f zener BZX84C12LT1 zener z12 BZX84C24LT1 izt3 BZX84C18LT1 BZX84C27LT1 BZX84C36LT1
Contextual Info: ZENER DIODES - REGULATION IN SURFACE MOUNT NOMINAL ZENER 225mV BREAKDOWN VOLTAGE SOT-23 Cathode Volts Volts No Connection Plastic Case 318 To-236AB REV. : 0 2.7 BZX84C2V7LT1 MMBZ5223BLT1 3.3 BZX84C3V3LT1 MMBZ5226BLT1 5.1 BZX84C5V1LT1 MMBZ5231BLT1 6.8 BZX84C6V8LT1

transistor D 2395

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 M M BTA14LT1* Darlington A m plifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose T ransistor PNP Silicon BCW68GLT1 COLLECTOR 3 2 EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emltter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol Value Unit

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Symbol Value Unit VCEO -40 Vdc vebo -4.0 Vdc 'C -100 mAdc Collector Current — Continuous CASE 318-08, STYLE 6

1Ft SOT23

Abstract: SOT 23 1ft 1FT sot23-6 marking 1ft sot-23 MMBV809L MMBV809LT1 MMBV809 diode 1Ft
Contextual Info: SILICON EPICAP DIODE . . . designed fo r 900 MHz frequency control and tuning applications; providing solid-state reliability in replacement o f mechanical tuning methods. MMBV809LT1* CASE 318-07, STYLE 8 SOT-23 TO-236AB • Controlled and Uniform Tuning Ratio

BCW69LT1

Abstract: BCW70LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBCW69LT1G LBCW70LT1G 3 COLLECTOR 1 BASE 3 Featrues 2 EMITTER We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol

Contextual Info: LESHAN RADIO COMPANY, LTD. Low Noise Transistor NPN Silicon LMBT2484LT1G z Pb-Free Package is Available. Ordering Information Device Marking 3 Shipping LMBT2484LT1G 1U 3000/Tape&Reel LMBT2484LT3G 1U 10000/Tape&Reel 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon z Pb-Free Package is Available. LMBTA70LT1G Ordering Information Device Marking Shipping 3 LMBTA70LT1G M2C 3000/Tape&Reel LMBTA70LT3G M2C 10000/Tape&Reel 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon LMBT918LT1G z Pb-Free Package is Available. Ordering Information Device Marking Shipping LMBT918LT1G M3B 3000/Tape&Reel LMBT918LT3G M3B 10000/Tape&Reel 3 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching diode Pb-Free package is available LDAN202KLT1G zApplications Ultra high speed switching 3 zFeatures 1 Small mold type. 2) High reliability 1 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB) zConstruction Silicon epitaxial planar

09Ah

Abstract: 14-PIN
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT-23 TO-236 CASE 318-09 ISSUE AH SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS

transistor D 2395

Abstract: Motorola 2396
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 1 3 1 EMITTER 2 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit

Contextual Info: MOTOROLA °rd6rNu“ *S Semiconductor Components M AX809 M AX810 SOT-23 PLASTIC PACKAGE TO-236 CASE 318 3-P in M icroprocessor Reset Monitors Features • Precision Vcc Monitor for 3.0V, 3.3V, and 5.0V Supplies • 140msec Guaranteed Minimum RESET, RESET

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB

Contextual Info: MAXIMUM RATINGS Value Unit Collector-Emitter Voltage v CEO 40 Vdc Emitter-Base Voltage Ve b o -4 .0 Vdc 'c - 100 mAdc Symbol Rating Collector Current — Continuous MMBTA70LT1 CASE 318-07, STYLE 6 SOT-23 TO-236AA THERMAL CHARACTERISTICS Characteristic Symbol

marking td sot323

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6520LT1 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon BCW68GLT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc

diode RA 225 R

Contextual Info: MAXIMUM RATINGS Rating Reverse Voltage Symbol Value Unit Vr 75 35 Vdc if 100 m Adc MMBD2836LT1 MMBD2835LT1 Forward C urrent MMBD2835LT1 MMBD2836LT1 CASE 318-07, STYLE 12 SOT-23 TO-236AB THERMAL CHARACTERISTICS Characteristic Sym bol Max Unit pd 225 mW 1.8

JB MARKING SOT-23

Abstract: DELTA fan bfb
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High V oltage Transistor PNP Silicon MMBT5401LT1 colle3ctor Motorola Preferred Device 2 EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO -150 Vdc Collector-Base Voltage

Contextual Info: MOTOROLA Order this document by MMBD7000LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode M M BD7000LT1 Motorola Preferred Device 1 ° ANODE N ? i N ° 2 CATHODE CATHODE/ANODE MAXIMUM RATINGS EACH DIODE Symbol Bating Reverse Voltage CASE 318-08, STYLE 11

motorola diode device data

Abstract: IV01TS
Contextual Info: SILICON EPICAP DIODE . . . designed fo r 900 MHz frequency control and tuning applications; providing solid-state re lia bility in replacem ent of mechanical tuning methods. MMBV809LT1* CASE 318-07, STYLE 8 SOT-23 TO-236AB • Controlled and U niform Tuning Ratio