.H2 MARKING Search Results

diode marking H2

Abstract: marking .H2 marking H1 Marking H2
Contextual Info: SURFACE MOUNT CRYSTAL QSMC - 2400 Hy-Q International SUGGESTED PAD LAYOUT TOP VIEW BOTTOM VIEW 1.2±0.2 7.0±0.2 1.6±0.2 6.0±0.2 GND GND 5.0±0.2 GND H2 H2 2.54±0.2 2.54±0.2 MARKING GND H1 H2 1.0±0.2 TYP. H1 GND 1.4±0.2 TYP. H1 GND CERAMIC 1.0±0.2 TYP.

4N04H2

Abstract: diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02
Contextual Info: IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 2.4 mΩ ID 100 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow

IPP100N04S4-H2

Abstract: IPB100N04S4-H2 IPI100N04S4-H2 4N04H2 MJ-39
Contextual Info: IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.4 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow

Marking H2

Abstract: H2 MARKING marking .H2 BCW70 MARK H2
Contextual Info: SEMICONDUCTOR BCW70 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H2 1 2 Item Marking Description Device Mark H2 BCW70 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: TM INDUSTRIAL GRADE CompactFlash Disk W7CFxxxA-H2 Series ROHS 6/6 Compliant 64MB – 8GB CompactFlashTM Disk INDUSTRIAL GRADE W7CFxxxA-H2 Series INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO WINTEC INDUSTRIES PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

sjpl-h2

Contextual Info: SANKEN ELECTRIC CO., LTD. SJPL-H2 1. Scope The present specifications shall apply to an SJPL-H2. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 061114 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

resistor 100 ohm CECC

Abstract: H2 RESISTORS
Contextual Info: Axial Leaded Precision Resistors Type H2 Series Type H2 Series Temperature Coefficient / Tolerance Ranges Characteristics Electrical TCR ppm/°C 0.1%-0.25% 0.5%-1.0% 25 4M0-5M0 4M0-5M0 65°C 50 4M0-10M 4M0-10M 350V 100 4M0-10M 4M0-10M Power Rating at 70°C:

H2 RESISTORS

Abstract: BSCECC40101 marking code H2
Contextual Info: Axial Leaded Precision Resistors Type H2 Series Type H2 Series Temperature Coefficient / Tolerance Ranges Characteristics Electrical TCR ppm/°C 0.1%-0.25% 0.5%-1.0% 25 4M0-5M0 4M0-5M0 65°C 50 4M0-10M 4M0-10M 500V 100 4M0-10M 4M0-10M Power Rating at 70°C:

HC49 smd

Abstract: transistor SMD p04 HC49/SMD smd p04 p03 smd HC49-SMD P04 smd QESM49H4 smd transistor marking p04 QESM49H4.1
Contextual Info: FREQUENCY QESM49H4 / H2 / H32 HC49 SMD Crystal – SMD packaged Specification Rev-F Electrical Characteristics .P01 ESR vs. frequency range and Mode of vibration .P01 Mechanical Characteristics .P01

Contextual Info: r z 7 SGS-THOMSON ^ 7 # MeramiOTiBiiKiDe BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW69 H1 BCW70 H2 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO AMPLIFICATION AND

BCW69

Abstract: BCW70
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW69 = H1 BCW70 = H2 Pin configuration 1 = BASE 2 = EMITTER

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW69 = H1 BCW70 = H2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BCW69 = H1 BCW70 = H2 Pin configuration 1 = BASE 2 = EMITTER

Contextual Info: BCW69 BCW70 IL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCW69 = Hl BCW70 = H2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.6 ^ 0.48 . 1 0.38 0.14 0.09 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR J.02 0.60 0.40

MIL-C-55365

Abstract: CWR11 AVX TAZ TR13 avx cwr11 476-AA
Contextual Info: CWR11 Style MIL-C-55365/8 MARKING Polarity Stripe “J” for JAN Brand Capacitance Code Rated Voltage with manufacturer’s ID CASE DIMENSIONS: millimeters (inches) Case Code W L H W2 ±0.1 (±0.004) P ±0.3 (±0.012) H2 (min) A 1.6±0.2 (0.063±0.008)

Contextual Info: BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BCW69 = ¿[1 BCW70 = H2 PACBCAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 L 0.70 0.50 3 "1 Pin configuration 1.4 2.6 2.4 1.2 R0.1 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: Extract from the online catalog FFKDSA/H2-7,62 Order No.: 1790458 PC terminal block, Nominal current: 17.5 A, Nom. voltage: 400 V, Pitch: 7.62 mm, Number of positions: 1, Type of connection:

BCW70

Abstract: BCW69 ic 353 hz
Contextual Info: BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BCW69 = £ri BCW70 = H2 PACKAGE O UTLIN E DETAILS ALL D IM EN SIO N S IN m m 3.0 2.8 0.4« 0.38 0.14 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02 0.89* 0.60

V13-A500X

Abstract: B88069X4390X251
Contextual Info: Surge Arrester Components Material Data Sheet Product Family Name V13-A500X B88069X4390X251 Date 01.03.2007 Version 2 Construction Element Material group Material CAS if applicable Ceramics Al2O3 1344-28-1 40 Electrode Cu 7440-50-8 58 Inert Gas N2 / H2 / Ar

Contextual Info: Surge Arrester Components Material Data Sheet Product Family Name 2EH230F Leutron (B88069X1001C103) Date 01.03.2007 Version 2 Construction Element Material group Material CAS if applicable Ceramics Al2O3 1344-28-1 22 Electrode Cu 7440-50-8 65 Inert Gas Ne / Ar / H2

Contextual Info: Surge Arrester Components Material Data Sheet Product Family Name SSG3X-1JP B88069X2490C502 Date 01.03.2007 Version 2 Construction Element Material group Material CAS if applicable Ceramics Al2O3 1344-28-1 31 Electrode Cu 7440-50-8 54 Inert Gas N2 / H2 / Kr

T90-A230X

Contextual Info: Surge Arrester Components Material Data Sheet Product Family Name T90-A230X B88069X6700C253 Date 01.03.2007 Version 2 Construction Element Material group Material CAS if applicable Ceramics Al2O3 1344-28-1 22 Electrode Cu 7440-50-8 73 Inert Gas N2 / H2 / Ar

B88069X0270S102

Abstract: SSG5X-1
Contextual Info: Surge Arrester Components Material Data Sheet Product Family Name SSG5X-1 B88069X0270S102 Date 01.03.2007 Version 2 Construction Element Material group Material CAS if applicable Ceramics Al2O3 1344-28-1 29 Electrode Cu 7440-50-8 45 Inert Gas Ar / Kr / N2 / H2

B88069X1480S102

Contextual Info: Surge Arrester Components Material Data Sheet Product Family Name SSG3X-1J B88069X1480S102 Date 01.03.2007 Version 2 Construction Element Material group Material CAS if applicable Ceramics Al2O3 1344-28-1 25 Electrode Cu 7440-50-8 43 Inert Gas N2 / H2 / Kr