0/840 NM GAAS Search Results

EYP-RWE-0840-06010-1500-SOT02-0000

Abstract: 780 laser diode tunable laser diode 840 nm GaAs 0/840 nm GaAs
Contextual Info: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0840-06010-1500-SOT02-0000

GWOY6034

Abstract: LL85
Contextual Info: Hybride Impuls-Laserdiode mit integrierter Treiberstufe 12 W Hybrid Pulse Laser Diode with Integrated Driver Stage 12 W SPL LL85 Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Kostengünstiges Plastikgehäuse • Zuverlässiges InGaAs/GaAs kompressiv

tapered amplifier diode

Contextual Info: DATA SHEET EYP-TPA-0850-01000-4006-CMT04-0000 Version 0.92 2009-09-18 page 1 from 5 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL BAL General Product Information Product Application 850 nm Tapered Amplifier Raman Spectroscopy C-Mount Package

Contextual Info: epitex Opto-Device & Custom LED SMD TYPE LED SMT850/940 Lead Pb Free Product – RoHS Compliant SMT850/940 High Performance Bi-color TOP LED Bi-color LED of SMT850/940 consists of DDH AlGaAs and GaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin.

MIE-406A2U

Abstract: TO46 package
Contextual Info: AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE Description MIE-406A2U Package Dimensions The MIE-406A2U is an infrared emitting diodes in GaAs technology with AlGaAs window coating molded in plastic pink transparent package. Unit : mm inches

A 3120 opto

Abstract: MIE-384A4
Contextual Info: AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-384A4 Package Dimensions The MIE-384A4 is an infrared emitting diode utilizing Unit : mm inches GaAs with AlGaAs window coating chip technology. 4.6±0.30 (.181) It is molded in water clear plastic package.

MIE-304A2

Abstract: opto 921 high power infrared led
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A2 Package Dimensions The MIE-304A2 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.

high power infrared led

Abstract: MIE-304A4 Unity Opto Technology
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A4 Package Dimensions The MIE-304A4 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.

MIE-334A4

Contextual Info: AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE MIE-334A4 Description Package Dimensions The MIE-334A4 is an infrared emitting diode utilizing Unit : mm inches GaAs with AlGaAs window coating chip technology. ψ3.00 (.118) It is molded in water clear plastic package.

Nelco-4000

Abstract: 10k resistor Nelco4000-13 NELCO-4000-13 EM1052 EM1052-LDTTA P802
Contextual Info: 10 Gbit/s XFP Optical Transceiver 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. EM1052-LDTTA Preliminary Data Sheet Features • • • • • • • • • • • 850nm Vertical Cavity Surface Emitting Laser VCSEL Source Technology 850nm GaAs PIN photodetector

MIE-406A4U

Contextual Info: AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE Description MIE-406A4U Package Dimensions The MIE-406A4U is an infrared emitting diodes in GaAs technology with AlGaAs window coating molded in plastic pink transparent package. Unit : mm inches

MIE-304G1

Abstract: 840 nm GaAs
Contextual Info: GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304G1 Package Dimensions The MIE-304G1 is an infrared emitting diode in GaAs Unit : mm inches technology molded in water clear plastic package. ψ3.00 (.118) 5.25 (.207) 1.00 (.040) 4.00

MIE-524A4

Contextual Info: AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-524A4 Package Dimensions The MIE-524A4 is an infrared emitting diode utilizing φ 5.05 .200 Unit : mm (inches ) GaAs with AlGaAs window coating chip technology. 5.47 (.215) It is molded in water clear plastic package.

high power infrared led

Abstract: MIE-184A4 184a4
Contextual Info: GaAlAs/GaAs 1.8mm PACKAGE INFRARED EMITTING DIODE Description MIE-184A4 Package Dimensions The MIE-184A4 is a high power infrared eimtting Unit : mm inches diode in GaAs technology with AlGaAs window φ1.80 (.071) R 1.70 (.067) coating molded in water clear plastic package.

MIE-556A2U

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-556A2U Package Dimensions φ5.05 .200 The MIE-556A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

MIE-536A2U

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536A2U Package Dimensions φ5.05 .200 The MIE-536A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

MIE-536A4U

Abstract: LTd1117
Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536A4U Package Dimensions φ5.05 .200 The MIE-536A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

high power infrared led

Abstract: MIE-324A2
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-324A2 Package Dimensions The MIE-324A2 is a high power infrared eimtting Unit : mm inches diode in GaAs technology with AlGaAs window φ 3.55±0.25 (.140±.010) coating molded in water clear plastic package.

MIE-554A4

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-554A4 Package Dimensions Unit:mm inch The MIE-554A4 is an infrared emitting diode utilizing φ5.05 (.200) GaAs with AlGaAs window coating chip technology. 5.47 (.215) It is molded in water clear plastic package.

MIE-516A2U

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-516A2U Package Dimensions φ5.05 .200 The MIE-516A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

MIE-526A4U

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-526A4U Package Dimensions φ5.05 .200 The MIE-526A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

MIE-514A4

Contextual Info: AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-514A4 Package Dimensions The MIE-514A4 is an infrared emitting diodes in φ5.05 .200 Unit: mm (inches) GaAs technology with AlGaAs window coating 5.47 (.215) encapsulated in water clear package.

MIE-814A2

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-814A2 Package Dimensions Unit: mm inches The MIE-814A2 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package.

MIE-546A4U

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-546A4U Package Dimensions φ5.05 .200 The MIE-546A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )