0/SMD DIODE SJ 53 Search Results

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 1Description

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: MOTOROLA Military 54F352 Dual 4-Input Data Selector/ Multiplexer With Inverted Outputs H ELECTRICALLY TESTED PER: MIL-M-38510/33909 m The 54F352 is a very high-speed dual 4-input multiplexer with common Select inputs and individual Enable inputs for each section. It can

1N3064

Abstract: 54LS242
Contextual Info: M Military 54LS242 M O TO R O LA Quad Bus Transceivers With 3-State Outputs ELECTRICALLY TESTED PER: MIL-M-38510/32801 M • Hysteresis at Inputs to Improve Noise Margins • 2-Way Asynchronous Data Bus Communications • Input Clamp Diodes Limit High-Speed Termination Effects

IPL65R130C7

Abstract: 65C7130
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPL65R130C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPL65R130C7 1Description ThinPAK8x8

Contextual Info: User Guide 020 ISL8117EVAL2Z Evaluation Board User Guide Description Key Features The ISL8117EVAL2Z evaluation board shown in Figure 1 features the ISL8117. The ISL8117 is a 60V high voltage synchronous buck controller that offers external soft-start, independent enable functions and integrates UV/OV/OC/OT

Contextual Info: M MOTOROLA Military 54LS242 Quad Bus Transceivers With 3-State Outputs MPO ELECTRICALLY TESTED PER: MIL-M-38510/32801 /////// The 54LS242 is a Quad Bus Transmitter/Receiver designed for 4-line asynchronous 2-way data communications between data buses. • Hysteresis at Inputs to Improve Noise Margins

smd H04

Abstract: Diode SMD SJ 65a FMI65N15T2 Diode SMD SJ 02 SJ 65a smd fuses 39a JI 32 FMB65N15T2 FMC65N15T2 fuji smd
Contextual Info: Device Name DATE DRAWN Jun.-17-'05 CHECKED Jun.-17-'05 CHECKED Jun.-17-'05 NAME APPROVED : Type Name : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,

65C7019

Abstract: IPW65R019C7
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R019C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R019C7 1Description TO-247

65C7019

Abstract: IPZ65R019 PG-TO247-4 ipz65r019c7 smd mosfet 400v
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPZ65R019C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPZ65R019C7 1Description PG-TO247-4

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPA65R125C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPA65R125C7 1Description TO-220FP

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R125C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R125C7 1Description D²PAK

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R125C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R125C7 1Description TO-247

TRANSISTOR SMD MARKING CODE loc

Abstract: POWER AMPLIFIER GROUP DATASHET transistor datashet list Datasheet lcd 162 smd marking RAI transistor "envelope detector diode" LMC7101 temperature TRANSISTOR SMD MARKING CODE 1v smd code lmc7101 smd 8pin marking 611
Contextual Info: LMC8101 Qualification Package World’s First 2.7V, 1MHz RR I/O Op Amp in mico SMD Package Standard Surface Mount Packages vs. micro SMD National’s LMC8101 Delivers 10mA Output Drive and Shutdown Capability • Output Drive is 3X LMC7101 or 10mA • 1µA Shutdown Current with < 10µS

SFH61BA-5

Abstract: 628A SFH62BA-2 Diode SMD SJ 05
Contextual Info: SFH618A/628A SIEMENS PHOTOTRANSISTOR, 5.3 kV TRIOS LOW CURRENT INPUT OPTOCOUPLER FEATURES • Very High CTR at lF=1 mA, VCE=0.5 V • SFH618A-2, 63-125% SFH61 B A -3,100-200% S F H 618A -4,160-320% SFH61BA-S, 250-500% SFH62BA-2, 63-200% S FH 628A -3,100-320%

transistor 2N3906 smd 2A SOT23

Abstract: BC640 PHILIPS SEMICONDUCTOR smd bc547 smd transistor NPN transistor BC547 temperature sensor bc557 SMD philips datasheet 2N4401 NPN Switching Transistor bc850c smd transistor smd 2N4403 BC547C SOT23 SMD BC557
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Contextual Info: SPD 07N20 G SIPMOSÒ Power Transistor Features Product Summary • N channel Drain source voltage DS 200 V · Enhancement mode Drain-Source on-state resistance DS on 0.4 W · Avalanche rated Continuous drain current 7 A D · d /d rated Pin 1 Pin 2 Pin 3 Type

54ls645

Contextual Info: M M O T O R O L A Military 54LS645 Octal Bus Transceivers With 3-State Outputs (Non-Inverting) MPO iniin ELECTRICALLY TESTED PER: M PG 54LS645 The 54LS645 is designed for asynchronous two-way communication between data buses. Control function implementation minimizes external

Contextual Info: M MOTOROLA Military 54LS243 Quad Bus Transceivers With 3-State Outputs MPO mini ELECTRICALLY TESTED PER: MIL-M-38510/32802 The 54LS243 is a Quad Bus Transmitter/Receiver designed for 4-line asynchronous 2-way data communications between data buses. • Hysteresis at Inputs to Improve Noise Margins

Contextual Info: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an

ic 5304 smd 8 pin

Abstract: Diode SMD SJ 36
Contextual Info: M MOTOROLA M ilitary 54LS242 Quad Bus TVansceivers With 3-State Outputs MPO ELECTRICALLY TESTED PER: MIL-M-38510/32801 /////// The 54LS242 is a Quad Bus Transmitter/Receiver designed for 4-line asynchronous 2-way data communications between data buses. • Hysteresis at Inputs to Improve Noise Margins

1N3064

Abstract: 54LS243
Contextual Info: M Military 54LS243 M O TO R O LA Quad Bus Transceivers With 3-State Outputs mun MP0 ELECTRICALLY TESTED PER: M IL-M-38510/32802 The 54LS243 is a Quad Bus Transmitter/Receiver designed for 4-line asynchronous 2-way data communications between data buses.

Contextual Info: M M M ilita ry 54L S 377 O T O R O L A D-Type Flip-Flop W ith Enable ELECTRICALLY TESTED PER: MIL-M-38510/32504 MPO IHflll The 54LS377 is an 8-bit register built using advanced Low Power Schottky technology. This register consists of eight D-type flip-flops with a

A5 KNA

Abstract: SMD HL2
Contextual Info: M M O T O R O L A M ilita ry 54L S 373 O c tal D -iy p e Flip-Flop W ith Transp arent L atch and 3 -S ta te O utputs MPO E L E C T R IC A L L Y T E S T E D P ER : M IL -M -3 8 5 1 0 /3 2 5 0 2 //# # # # / T h e 5 4 L S 3 7 3 c o n s is ts o f e ig h t la tc h e s w ith 3 - s ta te o u tp u ts fo r b u s