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triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

Contextual Info: Types 591-0, 592-0, 594-0 Series PO Power-Metaloxidefilm-Resistors axial, flame-retardant, coated Technical specifications Types Styles Dimensions 592 594 0925 0925 see list, next par?e 5,0 3,0 7,0 see list, next page E 24 see list, next pat + 200 ± 200 ± 200

17CT3

Abstract: 6586F a6W16 ETX 75 EA 250 301cl pn 0 273 003 210 D852 BD 266 S B536 FUS-040
Contextual Info: Table C-2. ASCII/EBCDIC Code Conversion Table Cont. AS C II TO EBCDIC HEX GPH OCT HEX 42 3 302 C2 43 C 303 C3 44 D 304 C4 45 E 305 C5 46 F 306 C6 47 G 307 C7 48 H 310 C8 49 I 311 C9 4A J 321 Ol 4ri K 322 D2 4C L 323 D3 4D M 324 D4 4E N 325 D5 4F O 326 D6

APT50M80B2VR

Abstract: APT50M80LVR
Contextual Info: APT50M80B2VR APT50M80LVR 500V 58A 0.080Ω POWER MOS V T-MaxTM Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M80B2VR APT50M80LVR 500V 58A 0.080Ω POWER MOS V T-MaxTM Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

abb entrelec relays

Abstract: RB 121 A 5-OBIC-0030 RB122BR 1SNA 103 002 R2600 RB122B abb entrelec rb 121 relays 1sna 115 935 r0400 1SNA 103 612 R2500 5-OBOC-1000-24VDC
Contextual Info: Short Form Catalogue Relays Optocouplers Relays and optocouplers Summary Applications - Technical data . 3 Selection guide - Relay modules . 4

Contextual Info: APT50M65JLL 500V 58A 0.065Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT60M75JFLL 600V POWER MOS 7 R 0.075Ω 58A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

"SOT-227 B" dimensions

Abstract: fast diode SOT-227
Contextual Info: APT50M65JLL 500V 58A 0.065W R POWER MOS 7 MOSFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

APT50M80B2VFR

Abstract: APT50M80LVFR
Contextual Info: APT50M80B2VFR APT50M80LVFR 500V 58A 0.080Ω POWER MOS V FREDFET T-MaxTM Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M80B2VFR APT50M80LVFR 500V 58A 0.080Ω POWER MOS V FREDFET T-MaxTM Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M65JLL 500V 58A 0.065Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT50M65JFLL

Contextual Info: APT50M65JFLL 500V POWER MOS 7 R 0.065Ω 58A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

power mosfet 600v 29a

Contextual Info: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

DIN 3967

Abstract: DIN 58405 DIN 867 gears DIN780 ASTM-D-635 ASTM-D635 din 2982 216-042 transistors 6822 nl 545
Contextual Info: SPUR GEARS 9 CONTENTS SERIES 101 Acetal : Module 0.5 - 3 p. 103-109 Delrin : Module 0.5 - 3 p. 110-115 Helical Brass/Steel : Module 0.3 - 1 p. 116 Brass : Module 0.3 - 1 p. 117-120 Steel : Module 0.5 - 6 p. 121-149 Stainless Steel : Module p. 150-151 Fax: +44 0 1992 509890

APL502L

Abstract: 305F APL502B2
Contextual Info: APL502B2 APL502L 500V 58A 0.090Ω D LINEAR MOSFET B2 G Linear Mosfets are optimized applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . S T-MAX TO-264 L • Higher FBSOA

Contextual Info: APL502B2 APL502L 500V 58A 0.090Ω D LINEAR MOSFET B2 G Linear Mosfets are optimized applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . S T-MAX TO-264 L • Higher FBSOA

Contextual Info: APT60M75JFLL 600V POWER MOS 7 R 0.075Ω 58A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APL502L

Abstract: 7485 305F APL502B2
Contextual Info: APL502B2 APL502L 500V 58A 0.090Ω B2 LINEAR MOSFET T-MAX TO-264 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . L D • Higher FBSOA

Contextual Info: APL502B2 APL502L 500V 58A 0.090W D LINEAR MOSFET B2 G Linear Mosfets are optimized applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . S T-MAX TO-264 L • Higher FBSOA

APL502

Contextual Info: APL502B2 APL502L 500V 58A 0.090W D LINEAR MOSFET B2 G Linear Mosfets are optimized applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . S T-MAX TO-264 L • Higher FBSOA

Contextual Info: APT60M75JFLL 600V POWER MOS 7 R 58A FREDFET 0.075Ω S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON