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cannon 20-8

Contextual Info: 2mm Interconnect TEMPUS C B C 20 Design Notes Shroud/Tail Calculation Shroud Base 3,40 mm Tempus Tail Code Backplane Thickness mm inch 1,80 (.071) 1,90 (.075) 2,00 (.079) 2,10 (.083) 2,20 (.087) 2,30 (.091) 2,40 (.094) 2,50 (.098) 2,60 (.102) 2,70 (.106)

s3gc

Contextual Info: S3AC thru S3MC SURFACE MOUNT STANDARD RECOVERY RECTIFIER VOLTAGE - 50 TO 1000 VOLTS CURRENT - 3.0 AMPERES SMC/DO-214AB .108 2.75 .128(3.25) .220(5.59) .245(6.22) .260(6.60) .280(7.11) .006(.152) .012(.305) .079(2.00) .103(2.62) .002(.051) .008(.203) .030(0.76)

Contextual Info: RS3AC thru RS3MC FAST SWITCHING SURFACE MOUNT RECTIFIER VOLTAGE - 50 TO 1000 VOLTS CURRENT - 3.0 AMPERES SMC/DO-214AB .108 2.75 .128(3.25) .220(5.59) .245(6.22) .260(6.60) .280(7.11) .006(.152) .012(.305) .079(2.00) .103(2.62) .002(.051) .008(.203) .030(0.76)

100C

Abstract: 550C TA550C
Contextual Info: US3AC thru US3MC SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS ULTRA FAST RECTIFIERS FORWARD CURRENT - 3.0 AMPERES SMC/DO-214AB .108 2.75 .128(3.25) .220(5.59) .245(6.22) .260(6.60) .280(7.11) .006(.152) .012(.305) .079(2.00) .103(2.62) .002(.051) .008(.203)

1000C

Abstract: 100C
Contextual Info: US3AC thru US3MC SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS ULTRA FAST RECTIFIERS FORWARD CURRENT - 3.0 AMPERES SMC/DO-214AB .108 2.75 .128(3.25) .220(5.59) .245(6.22) .260(6.60) .280(7.11) .006(.152) .012(.305) .079(2.00) .103(2.62) .002(.051) .008(.203)

1000C

Contextual Info: ES3AC thru ES3JC SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 TO 600 VOLTS CURRENT - 3.0 AMPERES SMC/DO-214AB .108 2.75 .128(3.25) .220(5.59) .245(6.22) .260(6.60) .280(7.11) .006(.152) .012(.305) .079(2.00) .103(2.62) .002(.051) .008(.203) .030(0.76) .050(1.27)

SDWL2520

Abstract: SDWL3225 SDWL2520F SDWL3225F100J SDWL3225F120J SAR 2205
Contextual Info: Chequers Electronic China Limited Wire Wound Chip Ferrite Inductor (SDWL-F Series) ● Dimension SDWL-F C D A Type A B C D SDWL2520 [1008] 2.5±0.2 [.098±.008] 2.0±0.2 [.079±.008] 1.8±0.2 [.071±.008] 1.4±0.1 [.055±.004] SDWL3225 [1210] 3.2±0.2 [.126±.008]

Contextual Info: 311-01 3 S HELL SIZE E F G H Í .010 MAX MAX MAX MAX a □ A S H ND T A B L E II DASH J K ENTRY NO MAX MAX MAX SYM . DATE A P P ROVED A RELEASED 03/10/89 T.L. 118 B R E V I S E D PER DCN 07956 03 / 2 4 / 8 9 H .T . 450 150 C RE V I S E D PER DCN 07972

SICK WL 25 123

Abstract: SICK 30 fgs sick 14 fgs sick DS 50 sick optic typ WL 9 sick wl 170 sick WL 14 p 430 Sensick Sensors DT 500 AD-LL-2M2 Sensick ds 60
Contextual Info: ground suppression, ASI interface, fibre-optic cable versions, insensitivity to ambient light and mutual interference when units are installed close together, are all device standards. The WL 12 G “glass photoelectric switch” designed for filling systems used in the beverage industry, represents more than just a

SF-T5-35-04

Abstract: SFT52501 SF-T8-50DM 70L02 SF-T10-50 SF-T3-20-01 SF-T8-50SM SF-T8-110S-01 SF-T10-30M SF-T8-30S
Contextual Info: TDK Line Chokes 1A to 6QA STANDARD TYPE 1A to 5A SHAPES AND DIMENSIONS '1 . SF-T3-20-01:20±3[.787±.118] *2. SF-T4-10-01, SF-T5-35-04:2 [.079]max. Dimensions in mm [inches] Dimensions in mm [inches] Part No. D max. H max. SF-T3-20-01 SF-T4-10-01 SF-T5-25-01

330 mH

Abstract: inductor 330 mh inductor 250 mh inductor 220 mh MH330 6V H bridge HER103 MSOP-10 220 mH inductor 270 mh
Contextual Info: TK6594xM ADVANCED SPECIFICATION ADVANCED SPECIFICATION EL LAMP DRIVER WITH INTENSITY CONTROL FEATURES APPLICATIONS n Designed for 40 nF to 80 nF Panel Capacitance n Lamp Voltage Independent of Input Voltage and n n n n n n n Temperature n Lamp Frequency Independent of Input Voltage and

RX1214B350Y

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium

ana 650 DIP 8

Abstract: HV04
Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

101 2KV

Abstract: X7R 1KV AN240 capacitor 270 2kv hv 102 AN120 HV03 HV05 N1500
Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

HV02

Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

0022 1kv

Abstract: 101 2KV 223 1KV capacitor 270 2kv HV03 140-042 AN240 HIGH VOLTAGE capacitor 4kv hv 102 AN120
Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

HV04

Abstract: 102 3KV
Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz) Capacitance Tolerances ±5%, ±10%, ±20% Operating Temperature Range

RS201M

Abstract: RS202M RS203M RS204M RS205M RS206M RS207M RS20X tube 807
Contextual Info: RS201M THRU RS207M SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES * Ideal for printed circuit board * Mounting position: Any RS-2M .106 2.0 ( 1.6 ) .079 .035 (0.9) .063 .043 (1.1 ) .047 (1.2 )

Contextual Info: RS201M THRU RS207M SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES * Ideal for printed circuit board * Mounting position: Any RS-2M .106 2.0 ( 1.6 ) .079 .035 (0.9) .063 .043 (1.1 ) .047 (1.2 )

CAPACITOR 10k 3KV

Abstract: E 203 M 1KV 223 1KV AN240 AN120 HV03 HV05 N1500 HIGH VOLTAGE capacitor 4kv
Contextual Info: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 F (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

Contextual Info: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 F (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

CAPACITOR 10k 3KV

Abstract: capacitor 203 1KV E 203 M 1KV HIGH VOLTAGE capacitor 4kv capacitor 270 2kv 68 1kv AN240 hv 102 AN120 HV03
Contextual Info: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)