0-30V POWER Search Results

k1507

Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
Contextual Info: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn

mosfet equivalent

Abstract: 2SK3018 T106 2SK3018 sc70
Contextual Info: 2SK3018 Transistor Small switching 30V, 0.1A 2SK3018 zExternal dimensions (Unit : mm) zApplications Interfacing, switching (30V, 100mA) 2.0±0.2 0.9±0.1 1.3±0.1 (2) (2) (3) (3) 0.7±0.1 0 to 0.1 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions

2SK3019

Abstract: SC-75A
Contextual Info: 2SK3019 Transistor Small switching 30V, 0.1A 2SK3019 !External dimensions (Units : mm) !Applications Interfacing, switching (30V, 100mA) 1.6±0.2 0.7±0.1 1.0±0.1 0.1±0.55 (2) (2) (3) 0.8±0.1 (1) (1) 0.5 0.3 +0.1 −0.05 1.6±0.1 0.5 0~0.1 0.15±0.05

2SK3019

Abstract: SC-75A
Contextual Info: 2SK3019 Transistor Small switching 30V, 0.1A 2SK3019 !External dimensions (Units : mm) !Applications Interfacing, switching (30V, 100mA) 1.6±0.2 0.7±0.1 1.0±0.1 0.1±0.55 (2) (2) (3) 0.8±0.1 (1) (1) 0.5 0.3 +0.1 −0.05 1.6±0.1 0.5 0~0.1 0.15±0.05

Contextual Info: FU JI 2SK2249-01L,S N-channel MOS-FET F-lll Series 30V 10A 35W > Outline Drawing > Features - 0 ,0 6 0 High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control General Purpose Power Amplifier

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30KM-03 HIGH-SPEED SWITCHING USE FS30KM-03 OUTLINE DRAWING Dimensions in mm 1 0 ± 0 .3 2 .8 1 0 .2 10V DRIVE V d s s .30V rDS ON (M AX) .4 6 m ii

2SK3019

Abstract: SC-75A
Contextual Info: 2SK3019 Transistor Small switching 30V, 0.1A 2SK3019 zExternal dimensions (Unit : mm) zApplications Interfacing, switching (30V, 100mA) 1.6±0.2 0.7±0.1 1.0±0.1 (1) 0.1±0.55 (2) (2) (3) 0.8±0.1 (1) 0.5 1.6±0.1 0.5 0.3 +0.1 −0.05 0~0.1 0.15±0.05 (1) Source

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30AS-03 HIGH-SPEED SWITCHING USE FS30AS-03 OUTLINE DRAWING Dimensions in mm 0.S±0.1 0.5 ±0.2 08^ O '2 • 10V DRIVE • VDSS . 30V 0 ® A- GATE DRAIN

c10p03

Contextual Info: SCHOTTKY BARRIER DIODE 11A/20~30V C10P02QL C10P03QL F10P02QL F10P03QL FEATU R ES °Similar to TO-220AB Case 0 Fully Molded Isolation F-Type • Extremely Low Forward Voltage Drop 0 Dual Diodes - Cathode Common ° Low Power Loss, High Efficiency 0 High Surge Capability

IT-E131

Abstract: IT-E131 Rs232 cable
Contextual Info: Data Sheet Triple Output Programmable DC Power Supply Model 9130 Specifications The 9130 is a fully programmable triple Output DC Power Supply delivering 0-30V/0-3A on 2 outputs and 0-5V/0-3A on 1 output. Each output is fully floating and outputs can be adjusted independently

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50KMH-03 HIGH-SPEED SWITCHING USE FS50KMH-03 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2 .8 1 0 .2 2.5V DRIVE V d s s .30V rDS ON (M AX). 22m Q

P channel MOSFET 50A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100KMH-03 HIGH-SPEED SWITCHING USE FS100KMH-03 OUTLINE DRAWING Dimensions in mm 10 ± 0 . 3 2.8 ± 0 .2 • 2.5V DRIVE • TDS ON (MAX) . •■ 30V 5.4mO • I D .

SHM-LM2

Abstract: SHM-LM-2 two way solenoid valve schematic diagram circuit Transistor 8530 3011I 1 watt led with heat led driver circuit diagram 3 way motor operated valve 8530M shmlm2 dc to dc converter step up power supply 24 volts input to 30v dc
Contextual Info: FSiioi^nML Models 8 5 1 0 , 2 0 , 3 0 Pow er Am plifier Motor and A ctuator D river KEY FEATURES: DESCRIPTION: • Capable of delivering 2.7 amps @ 24-28V d.c. operation 30V supplies • Protected against inductive kick back with internal power limiting

A2400

Contextual Info: E h a r r is H A -2 4 0 0 /0 4 /0 5 PRAM Four Channel Programmable Amplifier August 1991 Features • A pplications Programmability • Thousands of Applications; Program: • High Rate S le w . 30V/fis

transistor 2SA928

Abstract: 2SA928 transistor pnp 30V 2A 1W
Contextual Info: MICRO 2SA928 PNP SILICON TRANSISTOR DESCRIPTION TO-92B 2SA928 is PNP silicon planar transistor dedesigned for audio power amplifier. ECB Ta=25°C CONDITIONS MIN TYP MAX UNIT IC=100^A JE=0 30 V IC=10mA IB=0 30 V IE=lmA IC=0 5 nA VCB=30V IE=0 100 100 nA VEB=5V IC=0

Contextual Info: ACT4303 Active-Semi Rev 0, 05-Dec-11 30V/3A Sensorless CC/CV Step-Down DC/DC Converter FEATURES APPLICATIONS • • • • • • • • • • • 32V Input Voltage Surge 30V Steady State Input Voltage Up to 3A Output Current Output Voltage up to 12V

Contextual Info: Data Sheet Triple Output DC Power Supplies Models 1760A, 1761 & 1762 Specifications Spe ci fication s 1760A 1761 1762 Output Voltage 0-30V A & B 4-6.5 V (C) 0-35V (A & B) 2-6.5 V (C) 0-60V (A & B) 2-6.5 V (C) Output Current 0-2A (A & B) 5A (C) 0-3A (A & B)

1RF7319

Abstract: IRF7319 IRF7319 0 MOSFET ior 144
Contextual Info: PD - 9.1606A International I R Rectifier IRF7319 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-Ch V dss 30V P-Ch -3 0 V R d S oti 0 . 0 2 9 Q 0 .0 5 8 Î2

DFRC

Abstract: 86130 2A1050 AN7254 AN7260 ITF86130SK8T MS-012AA TB370 bv164 RS391
Contextual Info: in t e ITF86130SK8T r r ii J a n u a ry . Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET File Num ber 4798.2 Features • Ultra Low On-Resistance ‘ Packaging r D S O N = 0 .0 0 7 8 a VGS= 10V ‘ rDS(ON) = 0 .0 1 0 a VGs = 4.5V

lambda IC 101

Abstract: AN7254 AN7260 ITF86172SK8T MS-012AA TB370 vj04
Contextual Info: ITF86172SK8T interrii January. m i Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET File Number 4809.1 Features • Ultra Low On-Resistance Packaging ‘ rDS ON = 0 .0 1 6£i, v gs = - 1 0 V S 0 8 (JEDEC MS-012AA) ‘ rDS(ON) = 0.023i2, VGS = - 4 .5 V

TA49235

Abstract: 20n03
Contextual Info: integri I RFD20N03, RFD20N03SM D ata S heet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The R FD 20N 03 and R F D 20 N 03 S M N-Channel power M O S F E Ts are manufactured using the M egaFET process. J u ly 1999 F ile N u m b e r 4 3 5 0 .1 Features • 20A, 30V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30KMH-03 HIGH-SPEED SWITCHING USE ¡ FS30KMH-03 OUTLINE DRAWING Dimensions in mm +0 / ./ / ' / ' • 2.5V DRIVE • VD S S . •■ 30V • rDS ON (MAX) .

Contextual Info: MITSUBISHI Pch POWER MOSFET FX70KMJ-03 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dim ensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 4V DRIVE • V d s s .-30V • rDS ON (MAX) . 12.3m ii

F10P03QL

Contextual Info: SCHOTTKY BARRIER DIODE 11A/20— 30V C10P02QL C10P03QL F10P02QL F10P03QL FEATURES ° Similar to T0-220AB Case 0 Fully Molded Isolation F-Type • Extremely Low Forward Voltage Drop » Dual Diodes - Cathode Common ° Low Power Loss, High Efficiency 0 High Surge Capability