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    Riedon S-1-0.005-OHM-5-

    RES 0.005 OHM 5% 1/2W 1913
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    DigiKey S-1-0.005-OHM-5- Reel 300
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    Riedon MS-3-0.005-OHM-3-

    RES 0.005 OHM 3% 3W AXIAL
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    DigiKey MS-3-0.005-OHM-3- Bag 500
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    Riedon MS-5-0.005-OHM-3-

    RES 0.005 OHM 3% 5W AXIAL
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    DigiKey MS-5-0.005-OHM-3- Bag 500
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    Vishay Intertechnologies CW-10 0.5OHM 5% B12

    Resistor, Ceramic, 0.5 Ohm, 10W, 5%; Resistance:0.5Ohm; Product Range:Cw Series; Power Rating:10W; Resistance Tolerance:± 5%; Resistor Case/Package:Axial Leaded; Voltage Rating:-; Resistor Technology:Wirewound; Product Width:- Rohs Compliant: No |Vishay CW-10 0.5OHM 5% B12
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    Newark CW-10 0.5OHM 5% B12 Bulk 100
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    SEI Stackpole Electronics Inc CSFN-1-0.05-5%-I

    Res Thick Film 2010 0.05 Ohm 5% 1W ±250ppm/°C Pad SMD T/R
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    Onlinecomponents.com CSFN-1-0.05-5%-I 3,000
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    0.05 OHM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rd07mvs1b101

    Abstract: 3M Touch Systems D07MVS1
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05


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    PDF RD07MVS1B 175MHz 520MHz RD07MVS1B RD07MVS1 175MHz) 520MHz) rd07mvs1b101 3M Touch Systems D07MVS1

    RD07MVS1

    Abstract: RD07MVS1B T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05


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    PDF RD07MVS1B 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS1B RD07MVS1 T112 3M Touch Systems

    3M Touch Systems

    Abstract: transistor c 828
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 2.0+/-0.05 2 3.5+/-0.05


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    PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 175MHz, 175MHz) 520MHz) 3M Touch Systems transistor c 828

    RD02MUS1B

    Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 2.0+/-0.05 2 3.5+/-0.05


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    PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 T112 mosfet 4501 3M Touch Systems

    RD02MUS2

    Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
    Text: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


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    PDF RD02MUS2 175MHz 520MHz RD02MUS2 rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882

    RD02MUS1B

    Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


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    PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 T112 mosfet 4501 3M Touch Systems

    RD02MVS1

    Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


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    PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 RD02MVS1 T112 mosfet 1412 6D20 mosfet 4501

    Untitled

    Abstract: No abstract text available
    Text: 400V 220 F 85 400V 220 F 85 LSR Series °C °C °C °C °C °C 87 LSR Series STANDARD RATINGS Snap-in PCB T ype V 400 250 uF 45 30x40 0.05 1.50 55 35x40 0.05 1.70 75 35x40 0.05 1.98 82 35x50 0.05 2.00 100 35x40 0.05 1.90 110 35x40 0.05 2.00 165 35x45 0.05


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    PDF 30x40 35x40 35x50 35x45

    RD07MVS2

    Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05


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    PDF RD07MVS2 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS2 RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434

    3M Touch Systems

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05


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    PDF RD07MVS2 175MHz 520MHz RD07MVS2 175MHz) 520MHz) 3M Touch Systems

    MAR 527 transistor

    Abstract: RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in


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    PDF RD07MVS1B 175MHz 520MHz RD07MVS1B-101, MAR 527 transistor RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor

    RD07MVS1B

    Abstract: transistor t06 19 RD07MVS1B-101 RD07MVS1 T112
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in


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    PDF RD07MVS1B 175MHz 520MHz RD07MVS1B-101, RD07MVS1B transistor t06 19 RD07MVS1B-101 RD07MVS1 T112

    RD04HMS2

    Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
    Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING


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    PDF RD04HMS2 175MHz, 950MHz, 14dBtyp. 950MHz UHF/890-950MHz RD04HMS2 JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445

    RD04HMS2

    Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
    Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING


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    PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Handling Precautions for MOSFET 043mm 14dBtyp

    RD07MVS2

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


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    PDF RD07MVS2 175MHz 520MHz RD07MVS2 175MHz) 520MHz) Oct2011

    RD07MVS1

    Abstract: RD07MVS1-101 T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


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    PDF RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) RD07MVS1-101 T112 3M Touch Systems

    a 1757 transistor

    Abstract: 78s12 GRM40 RD12MVS1 T112
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


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    PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112

    mosfet marking 12W

    Abstract: 12w marking GRM40 RD12MVS1 T112
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


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    PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) mosfet marking 12W 12w marking GRM40 T112

    a 1757 transistor

    Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


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    PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 T112 MOSFET 12W mosfet 4816 mosfet 1208

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


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    PDF RD07MVS2 175MHz 520MHz RD07MVS2 520MHz 175MHz) 520MHz)

    78s12

    Abstract: RD12MVS1-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


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    PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) 78s12 RD12MVS1-101

    RD07MVS1-101

    Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


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    PDF RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101, RD07MVS1-101 T112 ID-750 RD07M D07MVS1 3M Touch Systems

    RD07MVS1

    Abstract: ic 453 8p
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor


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    PDF RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) ic 453 8p

    RGI74A

    Abstract: No abstract text available
    Text: ENG. NO SOA-73100-0248 22.00 REF. 0 .8 6 6 9.0 (0.354) 0' 2.56*0.05 (0 . 101) JL NO. A 3.86*0.05 (0.152) A® 3.12*0.05 (0.123) < F È f I WL L- > 6.50 (0.256) SI000257.DGN EDP f A FERRULE 1.70*0.05 A (0.067) SIMILAR ITEM 50 OHM SMB ASSEMBLY NO. S1000248.DGN


    OCR Scan
    PDF SOA-73100-0248 SI000257 S1000248 SDA-73 RGI74A, RGI74A