0.09 UM TECHNOLOGY Search Results

8EWS08S

Abstract: 8EWS10S 8EWS12S AN-994 8EWS10
Contextual Info: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology

8EWS10

Contextual Info: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology

8EWS08S

Abstract: 8EWS10S 8EWS12S AN-994
Contextual Info: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology

911-32006

Abstract: din 84 911-32046
Contextual Info: Power terminals 182 Power terminals Technical specifications Hole specifications Power terminal grid 5.08 x 7.62 mm Power terminal grid 5.08 x 10.16 mm Blade connector Accessories ept GmbH I Phone +49 0 88 61 / 25 01 0 I Fax +49 (0) 88 61 / 55 07 I E-mail sales@ept.de I www.ept.de

Contextual Info: TGA4506 K Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.2 x 0.8 x 0.1 mm

Contextual Info: TCA connectors: AdvancedTCA and MicroTCA® 10 TCA connectors Definitions Technical specifications Derating diagrams Hole specifications AdvancedTCA® Signal AMC B+ AdvancedTCA® Power Notes MicroTCA® Signal AMC MicroTCA® Power ept GmbH I Phone +49 0 88 61 / 25 01 0 I Fax +49 (0) 88 61 / 55 07 I E-mail sales@ept.de I www.ept.de

E130314

Abstract: 60352-5 IEC 60352-5 511-50500-163
Contextual Info: TCA connectors: AdvancedTCA and MicroTCA® 10 TCA connectors Definitions Technical specifications Derating diagrams Hole specifications AdvancedTCA® Signal AMC B+ AdvancedTCA® Power Notes MicroTCA® Signal AMC MicroTCA® Power ept GmbH I Phone +49 0 88 61 / 25 01 0 I Fax +49 (0) 88 61 / 55 07 I E-mail sales@ept.de I www.ept.de

MC74 motorola

Abstract: DL203 MC74 MC74VHC04 MC74VHCXXD MC74VHCXXDT 3B252
Contextual Info: L MOTOR O L A SEM ICO NDUCTOR TECHNICAL DATA H ex Inverter M C74VH C04 The M C74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

IEC60352-5

Abstract: IEC-60352-5 pcb connectors 60352 C5440 C54400 Preci-Dip CH-2800 802 PRECIDIP CuSn4Pb4Zn4
Contextual Info: PRESS-FIT TECHNOLOGY A COST-EFFECTIVE ALTERNATIVE TO SOLDERING PROCESSES swiss world connects COMPLIANT PRESS-FIT TECHNOLOGY WWW.PRECIDIP.COM TEL +41 32 421 04 00 SALES@PRECIDIP.COM BASIC TECHNOLOGY Press-fit technology, which has been around for some 25 years

2SK1778

Abstract: 2SJ236 2Sk1776 2SK1777 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

Contextual Info: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding.

spf 316

Abstract: phemt s parameters
Contextual Info: SPF-284, -484 1-6 GHz Low Noise PHEMT GaAs FET August, 1993 Features - Pseudomorphic HEMT Technology - Low Noise Figure: 0.5dB Typical at 2 GHz - High Associated Gain: 16dB Typical at 2 GHz - Low Cost Plastic Package - Tape and Reel Packaging Available 84 Plastic Package

transistor smd zG

Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG
Contextual Info: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with

GM76C256 goldstar

Abstract: GM76C256-10 GM76C256 M/MAX-00
Contextual Info: GOLDSTAR TECHNOLOGY INC/ MG2Ô757 DDQ2S40 S 2JE t OBJECTIVE SPECIFICATION GoldStar GOLD STAR CO., LTD. GM76C256 32,768x8 BIT STATIC RAM HIGH PERFORMANCE Pin Configuration Description The GM76C256 is 2 6 2,14 4 bit static random access memory organized as 32,768 words by 8 bits using CMOS

2JTA

Abstract: DL203 MC74VHC74 MC74VHCXXD MC74VHCXXDT MC74VHCXXM
Contextual Info: [_ M OTOROLA SEMICONDUCTOR TECHNICAL DATA Dual D-Type Flip-Flop with Set and Reset MC74VHC74 The MC74VHC74 is an advanced high speed CMOS D -type flip—flop fabricated with silicon gate C M O S technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

GM71C4256-10

Contextual Info: GOLDSTAR TECHNOLOGY INC/ 34E D _ 19 MÜ2Û757 GQD3E1S T «GST PRODUCT SPECIFICATION GM71C4256 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM _ T -V 6 -2 3 -/7 Description Pin Configuration The GM71C4256 is the new generation dynamic RAM organized 262,144 x 4 Bit. The GM71C4256 utilizes

smd diode se

Abstract: SE 40 RECTIFIER smd diode UM-12 RW marking d 132 smd code diode smd diode UM 08 smd diode UM 09
Contextual Info: Bulletin I2121 rev. B 09/01 SAFEIR Series 10ETS.S INPUT RECTIFIER DIODE Description/ Features VF The 10ETS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O ctal Bus B uffer/Line D river M C 74V H C T240A In vertin g w ith 3 -S ta te O utputs The MC74VHCT240A is an advanced high speed CM OS octal bus buffer fabricated with silicon gate C M O S technology. It achieves high speed

Contextual Info: s TAIWAN SEMICONDUCTOR TS9001 Series 300mA CMOS LDO with Enable bl RoHS CO M PLIANCE SO T-25 5 4 1 23 Pin Definition; 1. 2. 3. 4. 5. Input G round Enable B ypass O utpu t General Description The TS9001 series is a positive voltage linear regulator developed utilizing C M O S technology featured low quiescent

TI3H

Abstract: DL203 MC74VHC MC74VHCU04 TAG9 G100B
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA H ex In verter M C74VH CU 04 U n b u ffe re d The MC74VHCU04 is an advanced high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

A004R

Abstract: RO4350 VMMK-1218 VMMK-1218-BLKG USL10
Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that

A004R

Abstract: MM20 RO4350 VMMK-1218 VMMK-1218-BLKG 802.11abgn
Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that

LG 5804

Abstract: VMMK-1218-BLKG RGS 13/1 PHEMT marking code a BYY 56 byy 88 A004R MM20 RO4350 VMMK-1218
Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that

Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that