0.25-UM CMOS STANDARD CELL LIBRARY INVERTER Search Results

transistor bL P09

Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
Contextual Info: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its

Contextual Info: FU JITSU UHB SERIES 1.5p CMOS GATE ARRAYS MB62XXXX MB60XXXX Septem ber 1988 Edition 1.1 DESCRIPTION The UHB series o f 1 .5-m icron CMOS gate arrays Is a highly Integrated low -pow er, ultra high-speed product fam ily th a t derives its enhanced perform ance and increased user flexibility fro m the use of a system -proven, dual-colum n gate s tru ctu re and 2-layer

Pioneer SSA 40

Abstract: G4060 LT 6732 IMI6140 G4420
Contextual Info: /y INTERNATIONAL MICROCIRCUITS INCORPORATED ^ G io v o o /i/û o o f / V ^ u y I r ’; ~ j> LTj _ < ¿6 ' >L ^ '- i-G -p - PRODUCT FEATURES IM I DESIGN CYCLE FLOWCHART 2.0 and 3.5 Micron CMOS Single and Dual Level Metal cr~ Up to 6200 2-input NAND equivalents ^

design an 8 Bit ALU using VHDL software tools -FP

Abstract: AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K
Contextual Info: Cell-Based IC Features • • • • • • • Integration of all the elements of a complex electronic system on a single IC. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMITM ARM Thumb , 8051TM ,

Pioneer SSA 40

Abstract: g70490 G4060 IMI6170 G70250 IMI6000 IMI6140 IMI6270 IMI6330 IMI6430
Contextual Info: INTERNATIONAL M ICROCIRCUITS -INCORPORATED PRO DUCT FEATURES IM I D E S IG N CYCLE FLOW CHART 2.0 and 3.5 Micron CMOS er-' Single and Dual Level Metal Up to 6200 2-input NAN D equivalents ^ Up to 158 I/O connections Ultra High Speed TTL and CMOS Compatible

MQFPL160

Contextual Info: T em ic MG2RT Semiconductors Radiation Tolerant 0.5-jiim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured

Contextual Info: M T C - 2 2 0 0 0 C M O S 0 .7 n Standard Cell Family Services CMOS Family Features • Technology: CMOS 0 .7 m icron, double or triple la y e r m etal digital or m ix e d a n a lo g /d ig ita l processes, featu rin g self­ aligned tw in tub N an d P w ells, polycide or polysilicon

OAI221

Abstract: inverter tm 0917 OAI21
Contextual Info: Cell-Based 1C Features • • • • • • • Integration of all the elements of a complex electronic system on a single 1C. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMI ARM Thumb , 8051™ ,

F483

Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
Contextual Info: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the

Contextual Info: PLESSIEY SEMICONDUCTORS Appendix 7 ; CLA60000 SERIES CHANNELLESS CMOS GATE ARRAYS Supersedes December 1988 Edition This advanced family o f gate arrays uses many innovative techniques to achieve 110K gates pa r ch'p - system clock speeds in excess o f 70MHz are achievable. The combinatbn

IMI7340

Abstract: IMI7160 IMI7000 IMI7080 IMI7220 G4060 IMI712K G4000 IMI7490 IMI7620
Contextual Info: m iT O Q Q ^ A M IU f CMOS GATE ARRAY NTERNATIONAL M IC R O CIR CU ITS I NC TELEPHONE: 408 263-6300 TWX: 910 338 2032 FAX: 408 263-6571 Oxide-isolated silicon-gate process Dual level metalization Fully autoroutable 792 to 12,000 2-input NAND equivalents Up to 220 I/O connections

z63n

Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
Contextual Info: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us­ ing a 0.8 micron drawn twin well silicon gate process

Contextual Info: S i GEC PLESSEY j u l y i 997 S E M I C O N D U C T O R S D S 4 8 1 2 - 1.3 CLA200 SERIES CMOS GATE ARRAYS INTRODUCTION T he C L A 2 0 0 S e rie s A rra y s fro m G E C P le s s e y Sem iconductors GPS offer designers the capability to integrate designs of more than 2 million gates. There are 14

H7442

Abstract: Matra-Harris Semiconductor
Contextual Info: MB GATE ARRAY SERIES 2/t/2 METAL LAYERS M ÌM ÌIII /MATRA' HARRIS SEMICONDUCTOR MB 850 • MB 1300 • MB 2000 MB 2700 • MB 4000 - MB 5000 -MB 7500 MAY 1986 PR B LÎISIÈ S A R V Features MACRO CELL LIBRARY EXTENSION CAPABILITY : - COMBINATIONAL AND SEQUENTIAL

TSC500

Abstract: 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068
Contextual Info: TSC500 SERIES 1-pm CMOS STANDARD CELLS RELEASE 1.2, APRIL 1989 • High-Performance, 1-pin EPIC CMOS Efficiently Achieves System-Level Designs BOND PAD COMPILER RAM MSI FUNCTION • TSC500 Library Includes Macros for - Static RAMs, Register Files - First-In First-Out Memories

transistor KT 209 M

Contextual Info: Preliminary IlM lI September 1989 OPEN ASIC DATA SHEET MC GATE ARRAY SERIES 0.8 MICRON SCMOS FEATURES . SUPER CM OS TECHNOLOGY -1 um DRAWN 2 METAL LAYERS . FLEXIBLE I/O CONFIGURATION : INPUT, OUTPUT, THREE-STATE, VCC & VSS . SILICON GATE 0.8 |im EFFECTIVE CHANNEL

74ls82

Abstract: 74245 BIDIRECTIONAL BUFFER IC 74ls150 ph 4531 diode 4583 dual schmitt trigger ic D flip flop 7474 74245 BUFFER IC ic 7483 BCD adder data sheet ic 74139 Quad 2 input nand gate cd 4093
Contextual Info: General Features The SCxD4 series of high perform ance CM O S gate arrays offers the user the ability to realise custom ised VLSI inte­ grated circuits featuring the speed perform ance previously obtainable only with bipo lar tech nolog ies whilst retaining all

Contextual Info: Order this data sheet by HDC/D MOTOROLA HDC SERIES SEMICONDUCTOR TECHNICAL DATA H IG H PER FO R M A NC E T R IP L E LAYER M ETAL HDC SERIES CMOS ARRAYS 1 .0 M IC R O N C M O S A R R A Y S B uilt on a 1.0 m icron, trip le -la y e r metal C M O S process, the HDC

TRANSISTOR PHL 641

Abstract: MAX1987 2 Input NAND Schmitt Trigger with Open Drain Outp mb62xxxx transistor 1PN M0623 transistor H6C LCC-48C-A01 BO 180 gq102b7
Contextual Info: s ? CO LU • • Œ S ü j u c/> » I S £ œ Dü< i I CO ÜJ o sen • • ú 1= S -a s s e s s s 9 s 3 <*- a2 *1 • i » I I 1 I ! i ! I i 1 1 se 1 § § i 1 § 1 1 5 2 • i D x i83 I I 03 CD X X 3 X 5 i i S 1 ó 1 1 « 5 ó 3 8 •- »- MB62XXXX MBSOxxxx

CDA 10.7 MC 40

Contextual Info: fíOv ¿4 m O rder this Data Sheet by H4C D MOTOROLA H4C SERIES SEMICONDUCTOR TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H PERFORM ANCE T R IP L E LAYER M ETAL The H4C Series is Motorola’s highest performance, sub-micron family of

Contextual Info: CLA200 Series M IT E L CMOS Gate Arrays Advance Information SEMICONDUCTOR DS4812 -1 .3 July 1997 IN TR O D U C TIO N The CLA200 Series Arrays from Mitel Semiconductor offer designers the capability to integrate designs of more than 2 million gates. There are 14 fixed arrays optimised for low to

Matra-Harris Semiconductor

Abstract: MB-7500 pn sequence generator using d flip flop H749 H741 matra harris gate array H7444 INVP inverter MB-4000 multi 9 ihp 1c
Contextual Info: MB GATE ARRAY SERIES 2/J2 METAL LAYERS Illììlilll //ATRA•HAI<’RISSEMICONullUOR MB 850 - MB 1300 - MB 2000 MB 2700 - MB 4000 - MB 5000 -MB 7500 MAY 1986 ¡U M IN À H V Features MACRO CELL LIBRARY EXTENSION CAPABILITY : - COMBINATIONAL AND SEQUENTIAL

DIGITAL GATE EMULATOR USING 8085

Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
Contextual Info: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S

synchronous inverter schematic ims 1600

Abstract: elcot tv kit circuit diagram iosq 050 pin diagram for IC cd 1619 cp in fm smd code transistor sd IL44 Z ET 439 IL44 transistor ksv3100a UTM ceramic RESISTOR 390 210-9
Contextual Info: CONFIGURABLE DESIGN PLD 1 S i 2 0 Regan Brampton, Tel: (4 1 6 Fax: (4 1 6 ) 9 • Si APPLICATION BOOK F P GA 9 LOGIC 4 Ì 4(I M A S S O C IA T E S Road, Unit 14 O ntario L 7 A 1C3 8 4 0 -6 0 6 6 8 4 0 -6 0 9 1 • GATE A R R A Y 1 9 9 5 iilmËL Atmel Programmable Logic Devices (PLDs)