0.35 UM CMOS TECHNOLOGY Search Results

CMOS

Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
Contextual Info: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular

MOS RM3

Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials
Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and

XH035 library

Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and

MC74 motorola

Abstract: DL203 MC74 MC74VHC04 MC74VHCXXD MC74VHCXXDT 3B252
Contextual Info: L MOTOR O L A SEM ICO NDUCTOR TECHNICAL DATA H ex Inverter M C74VH C04 The M C74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2 -In p u t XOR G ate M C 74VH C 86 The MC74VHC86 is an advanced high speed CMOS 2-input Exclusive-OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similarto equivalent Bipolar Schottky TTL while maintaining

Contextual Info: Foundry Services May 2010 Peregrine’s UltraCMOS RF and Mixed-Signal Wafer Foundry Services Unprecedented benefits in speed, power, integration and cost The UltraCMOS process is a patented silicon-on-sapphire technology SOS that has for years been recognized as a

hv2300

Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
Contextual Info: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom

nmos transistor 0.35 um

Contextual Info: UltraCMOS Process Technology May 2010 UltraCMOSTM Technology - The Ultimate SOI Ultra-Thin-Silicon UTSi on sapphire substrates enables monolithic RF integration The need for RF products and components that are smaller, higher performance, more efficient and less expensive is

Contextual Info: CXA4420GC SP5T+ SP5T SOI Antenna Switch with MIPI Interface for Qualcomm chipset CXA4420GC Description CXA4420GC is the SP5T+SP5T antenna diversity switch for WCDMA/3G/LTE applications. CXA4420GC has a 1.8 V CMOS compatible decoder with Qualcomm chipset. The SONY Silicon On Insulator SOI technology is used for low insertion loss.

2JTA

Abstract: DL203 MC74VHC74 MC74VHCXXD MC74VHCXXDT MC74VHCXXM
Contextual Info: [_ M OTOROLA SEMICONDUCTOR TECHNICAL DATA Dual D-Type Flip-Flop with Set and Reset MC74VHC74 The MC74VHC74 is an advanced high speed CMOS D -type flip—flop fabricated with silicon gate C M O S technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

71016s

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0011-04 DATE: Product Affected: 71016S, 71124S, 71128S Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #: Fax #:

Contextual Info: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.

Contextual Info: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: PCN #: SR 9908-07 Product Affected: 71V546S, 71V547S September 20, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark "Y" Die step on top mark

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O ctal Bus B uffer/Line D river M C 74V H C T240A In vertin g w ith 3 -S ta te O utputs The MC74VHCT240A is an advanced high speed CM OS octal bus buffer fabricated with silicon gate C M O S technology. It achieves high speed

Contextual Info: TC74LVX4245FS TENTATIVE DUAL SUPPLY OCTAL BUS TRANSCEIVER The TC74LVX4245 is a dual supply , advanced high speed CMOS OCTAL BUS TRANSCEIVER fabricated with silicon gate CMOS technology. Designed for use as an interface between a 5V bus and a 3.3V bus in mixed 5V / 3.3V supply systems’ it achieves high

1 kilo ohm resistor specifications

Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
Contextual Info: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •

TI3H

Abstract: DL203 MC74VHC MC74VHCU04 TAG9 G100B
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA H ex In verter M C74VH CU 04 U n b u ffe re d The MC74VHCU04 is an advanced high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

um 44 diode

Abstract: MC74VHCT132A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2 -In p u t NAND Schm itt Trigger M C 74V H C T132A The MC74VHCT132A is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation sim ilar to equivalent Bipolar S chottky TTL w hile m aintaining

AT28C256-25

Abstract: 28C256 AT28C256 AT28C256-15 AT28C256-20 AT28C256-35 AT28C256F LM 2222
Contextual Info: AT28C256 Features • • • • • • • • • • • Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum

HBT 01 - 05

Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Contextual Info: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna

A114

Abstract: A115 NC7SV32 NL17SV32 NL17SV32XV5T2 SN74AUC1G32
Contextual Info: NL17SV32XV5T2 Single Gate 2−Input OR Gate The NL17SV32 is an ultra−high performance 2 input OR gate manufactured in 0.35µ CMOS technology with excellent performance down to 0.9 volts. This device is ideal for extremely high−speed and high−drive applications. Additionally, limitations of board space are

MIL-STD-883 Method 3015.7

Abstract: atmel lot marking eeprom atmel 922 AT89C5114 breakdown gate oxide atmel 336 DYNAMIC RAM CROSS REFERENCE Atmel eeprom Cross Reference Atmel 434 Atmel AT35523 Product Reliability Test
Contextual Info: T8xC5121 QualPack Qualification Package T8xC5121 C51 Microcontrollers T8xC5121 FEBRUARY 2003 Rev. 0 – 2003 February 1 T8xC5121 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2

Contextual Info: 3.3V CMOS 1-TO-10 CLOCK DRIVER IDT54/74FCT3807/A PRELIMINARY Integrated Device Technology, Inc. FEATURES: 0 .5 M IC R O N C M O S Technology Available in D IP, S O IC , S S O P , C erpack and LC C packages G u aranteed low skew < 350ps m ax. Military product compliant to M IL -S T D -8 8 3 , Class B