00000H0FFFFH Search Results

M29W008A

Abstract: M29W008AB M29W008AT
Contextual Info: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte

M29W400B

Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

BIOS Flash ROM Chip

Abstract: M50FW040 PLCC32 TSOP32
Contextual Info: M50FW040 4-Mbit 512 Kb x8, uniform block 3-V supply firmware hub Flash memory Feature summary • Supply voltage – VCC = 3 V to 3.6 V for Program, Erase and Read operations – VPP = 12V for fast Erase (optional) ■ Two interfaces – Firmware hub (FWH) interface for

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical

M29F800D

Abstract: M29F800DB M29F800DT
Contextual Info: M29F800DT M29F800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

IR 1261

Abstract: prd2 APE1016 APE10616 APE1516 APE2016 APE3116 APE4116 APE6316 APE8416
Contextual Info: A PLUS MAKE YOUR PRODUCTION A-PLUS APExx16 Series DATA SHEET APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei, Taiwan 115, R.O.C. 115 台北市南港區成功路㆒段 32 號 3 樓之 10. Sales E-mail: sales@aplusinc.com.tw

29F800T

Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
Contextual Info: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption

Contextual Info: EFST F49L004UA / F49L004BA 4 Mbit 512K x 8 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z Compatible with JEDEC standard - Pinout, packages and software commands compatible with single-power supply Flash

555H

Abstract: MX29F200B MX29F200T
Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

Contextual Info: ££ Cost E ffective Solution fo r the 2 MB F lash C A T 2 8 F0 1 5 < = ^ T ^ L _ Y S - r L icen sed In tel second source 1.5 Megabit CMOS Flash Memory FEATURES • Fully Compatible to 2 MB Flash 28F020 - No hardware or software changes Stop Tim er for Program/Erase

Contextual Info: w t GEC P LESS EY S I M I C O N I I I O K S P1480 LAN CAM 1KX64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (SUPERSEDES SEPTEMBER 1993 EDITIO N The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory (CAM) aimed at address filtering applications in Local-area Network (LAN) bridges

324T

Abstract: 2MWx16bit
Contextual Info: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C

MX29LV400

Abstract: mx29LV160cbtc-70g MX29LV800C MX29LV160C MX29LV160CBTI-70G mx29lv160d MX29LV800CBTC-90G MX29LV800CTTC-70 MX29LV160CTTC-70G
Contextual Info: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B MX29LV400C T/B, MX29LV800C T/B, MX29LV160C T/B DATASHEET The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the

C000H-DFFFH

Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation

Contextual Info: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

ba1030

Abstract: M29W200BB
Contextual Info: M29W200BT M29W200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

CAPACITOR ELITE

Contextual Info: EFST F49L400UA/F49L400BA 4 Mbit 512K x 8/256K x 16 3V Only CMOS Flash Memory preliminary 1. FEATURES ! ! Single supply voltage 3.0V-3.6V Fast access time: 70/90 ns ! 524,288 x 8 / 262,144 x 16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands

29LV800

Abstract: TSOP 48 Pattern
Contextual Info: PRELIMINARY MX29LV800T/B & MX29LV800AT/AB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

audio synthesizer

Abstract: 56KHZ APE6312 APE0612 APE1012 APE1512 APE2012 APE3112 APE4112 APE5212
Contextual Info: A PLUS MAKE YOUR PRODUCTION A-PLUS APExx12 Series DATA SHEET APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei, Taiwan 115, R.O.C. 115 台北市南港區成功路㆒段 32 號 3 樓之 10. Sales E-mail: sales@aplusinc.com.tw

FB300

Abstract: M50FW080 PLCC32 TSOP32
Contextual Info: M50FW080 8 Mbit 1M x8, Uniform Block 3V Supply Firmware Hub Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional)

Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

BA RV

Abstract: code lock circuit A1D14 RV80
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

29F200T

Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

Q002

Abstract: M29W800FT TFBGA48 TSOP48 outline m29w800f
Contextual Info: M29W800FT M29W800FB 8 Mbit 1 Mb x8 or 512 Kb ×16, Boot Block 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read ■ Access time: 70 ns ■ Programming time – 10 µs per Byte/Word typical