0000SE3 Search Results

Contextual Info: r C i : : ~ &L 61C SEMICONDUCTOR bî V l ' V i U t j ^ U UT-äiJ gQSïiSl^fëSilffiSÊ !? ®@L?g3. eOBBSPEOB g®BMie@6ieai9e€ p ®@Pß9. e©Bïfti’gil „ de _ n a ^ t a □ o a o 2 t . cï | T - ff- o'? 1Ng2 i A 1N823Ä 1N825A 1N827A . 1N829A TEMPERATURE COMPENSATED

Contextual Info: 17077W-, ,xAL SEMICONDUCTOR aäpst ? E P i ce n tra l Setwigeitglisgtor Corp. C e n tra l S e m ico n d u cto r C orp . c e n tra l se m ic o n d u c to r C o rp . 145 Adams Avenue Hauppauge, New York 11788 DE S C R I P T I O N T h e C E N T R A L S E M I C O N D U C T O R CRSH1 Series types are Schottky B a rrier R e ctifiers m o u n t e d in an

2N22A

Abstract: 2N4271 2N3947 2N3326 2N3666
Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N3563

Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15

CR508

Contextual Info: 1989963 CENTRAL S E M I C O N D U C T O R ; GGSS vdts V R (volts) V R (RMS)<V0,ls) 61C O Q I S ^ ’T ' C / ' C J EM S 3.0-6.0 Amperes V rrm ' General Purpose Silicon Power Rectifier CR3005 CR3010 CR3020 CR3040 CR3060 CR3080 CR3100 CR3120 CR5005 CR5010

Contextual Info: 1989963 CENTRÀL SEMICONDUCTOR ' ' SKftWl nflTTLB 61C "00249 7 ^ 3 5 ^ 7 3 □ 0 D D 5 4 ‘ì S J " *• 'ï 3 if, '*ïf< j&-Lfv-r s*—.je MJ12010 eeratpcil g@Biie@iigl5jet©r c e r p . Central s e m i c o n d u c t o r eopp. JP NPN SILICON TRANSISTOR

Contextual Info: i A 12 Amperes General Purpose Silicon Power Rectifier kl VRRM<volts) ODGDlSb T iT | • CENTRAL S E M I C O N D U C T O R ^ »e | OQDOISL T | CR12I005 CR12I010 CR12I020 CR12I040 CR12I- 50 100 200 400 060 CR12I080 CR12I100 CR12I120 600 800 1000 1200 .060 (1.52) MIN DIA

2N4121

Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30

CR3U-005

Contextual Info: l?g?63 CENTRAL' SEMICONDUCTOR ~ >1 61C 00172 T - 0 3 -1 5 DE l D0DD17g 7 | c e n t r e il CR3U seBisieonsiMetoF e@rp. Central seiüieaitäyctor Corp. central Semiconductor Corp. SERIES ULTRA FAST RECOVERY RECTIFIER CASE 103 145 Adams Avenue Hauppauge, New York 11788

CR150-080

Abstract: CBR-12
Contextual Info: CENTRAL SEMIC ONDUCTOR tí d~ 1 □ □ □ o is i E i 3 - 2 ffi5 i £ a e a s e 150 Amperes 4 . ^ L General Purpose Silicon Power Rectifier hi de | nanta 4 | ooddist o V RRM (volts) Vr (volts) V R (RMS)(volts) CR1 50- CR150- CR150- CR150- CR150- CR150-

2N295

Abstract: 2N2891 2N223
Contextual Info: central se hi co nd u ct or bi D F | n a n t . 3 o o o o s it, 1 9 8 9 9 6 3 CENTRAL SEMICC3NDUCTOFr ' " _ 6 IC 00 216 NPNM ETALCA N -SW ITC H IN G AND GENERAL PURPOSE Cont'd. i — 21 h CDb MHz pF 8 8 8 8 8 < o 00 at VCE V V 2N2219 2N2219A 2N2220 2N2221

Contextual Info: 1989963 CENTRAL SEMICONDUCTOR t.1 3E &ê39 61C "00270 7W/-// DE I n ö T T b a 0D0DS7D 7 r 1N935B 1N936B 1N937B 1N93ÔB 1N939B @b C auîtral SsHaBeemaiDctoB* e©G’p. s central semiconductor Corp. TEMPERATURE COMPENSATED ZENER DIODE 145 Adams Avenue

MJ12005

Abstract: CBR30
Contextual Info: 61C 00248 •/ f - 1 3 - / 3 1989 963 CENTRAL ’SEMICONDUCTOR 0000E4Ö SlìtE3 ! °1 §@g3B9@@närae&@? 3 MJ12005 S e s r iic e & is iis e f ® ! ? c e r g » C e n tra l Z> NPN SILICON TRANSISTOR sattilc^iidssetor Corp. Central semiconductor Corp.

T-75 DIODE

Abstract: Germanium DO-35 DIODE Germanium Power Diodes diodes ir 5
Contextual Info: I [ »."¿'ix fOÔ Ï9 0 1 9 Ô 9 9 6 3 " t ËM 'tR Â C ^SËMlCQKlOÜd^Ofe DE J j ^emisonductor e@rp. Central Central 2 |~ J ? CDSH-L SERI ES *1 semiconductor DESCRIPTION ODDOSTO SILICON LOW CURRENT SCHOTTKY BARRIER DIODE JEDEC DO-35 CASE corn. The CENTRAL SEMICONDUCTOR

T-75 High voltage diode

Abstract: T-75 DIODE BAY72
Contextual Info: 1989963 61C 00288V ^ Q Î - ô î CËNTKALySgWXCONmjÇt O ^ til DE € rp. central semgconilucfor Corp. central sem iconductor Corp. Central sem iconductor Corp. ♦ I 1 4 5 Adams Avenue Hauppauge, New York 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR BAY72 is a general purpose Silicon Diode designed for fast

MPSU45 REPLACEMENT

Abstract: MPSU06 equivalent Motorola MPSU45 mpsu07 equivalent MPSU45 mpsu95 equivalent MPSU10 equivalent mps-u56 equivalent MPSU51 equivalent MPS-U05
Contextual Info: 1 CENTRAL SEMICONDUCTOR b l DE | n tm b B □DDDS40 T ~Ö Z - |T Central's CEÜ-U o I Ideal second source for Motorola’s MPS-U series power transistors Exact electrical equivalent in JE D E C TO-202 case._ • Superior power dissipation p D t A = 25 °C 1.75 W atts vs. 1.0 W att Motorola

MPSW45 equivalent

Abstract: transistor case To 105 CENW45 MPSW45
Contextual Info: 1989963 'CENTRAL "SEMICONPUCTOR S@giîie fiÆ eÊ@r ®©rp. g a m i semiconductor cored. central semiconductor e@rp. central semiconductor Corp. 1 4 5 Adams Avenue Hauppauge, N ew York 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR CENW45 Series Is a Silicon NPN Epitaxial Planar Darlington

3N246

Abstract: 3N247 3N248 3N249 3N250 3N251 3N252 3N253 3N254 3N259
Contextual Info: CENTRAL SEMICONDUCTOR ea r tòra! nimta oDDoiaa i ' g ESlB8@Kä et@P €@ffgL 3N246&#39; ï HRU 3N252 e®Mte^S s@SBSie@ßi^iߣt@r eopgs. 3N253 THRU 3N259 Central S@i?il€@iì£iU£tor Corp. Central Semiconductor Corp. SILICON BRIDGE RECTIFIERS CASE B 1 4 5 Adams Avenue

Contextual Info: 1989963 CENTRAL SEM C O N D U C T O R _ 6 1 C 0 0 2 3 0 - r - 2 9 ' 3 1 ti graf&Gsfl gSfiîB6e©Bi^5SÊ@P @@51-3. de I n t m b B • 00DDE3D b GES6014 GES6016 C@BS€?CSl g©DlliS@HÖö£tOP Corp. Central sem iconductor Corp. NPN SILICON TRANSISTOR

1N523

Contextual Info: 19 B9963 CENTRAL SEMICONDUCTOR h i g BEÊPai g^a&ESQBBSSOISÊ !? @ ® F g D e J iV ö ^T]] QDOOETT 3 |~~ 1135518, A, B, C, D §@waie©iitäiyG£oF w Csntral m m THRU m central semiconductor Corp. 3> 1N55U6, A, B, C, D g©&sii£@siefüeter C©rp. «»¿•fry

Contextual Info: DESCRIPTION The CENTRAL SEMICONDUCTOR 1N914A,B types are very high speed Silicon Switching Diodes designed for computer and general purpose applications. MAXIMUM RATINGS TA=25°C Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current

Contextual Info: DESCRIPTION T h e C E N T R A L S E M I C O N D U C T O R CR3F Series types are Axial Lead Silicon Recti f i e r s desi g n e d for DC Power S u p p l y and Inverter a p p l i c a t i o n s w h e r e fast recovery times are needed. M A X I M U M RATI N G S

Contextual Info: • 1969963 CENTRAL' SEM IC ON D UC TO R 61C 00175 S^ttJÏHB £Ç5BB«a»l9SEafc r Vb&SBTgäi. £ 0 ü M g s m i£ @ s ifis ie t f C o r p . Central sesniecmeiiBetor Corp. central semiconductor Corp. 145 Adams Avenue Hauppauge, New York 1 1 7 8 8 DESCRIPTION

BDX53E

Abstract: BUB06 ST BDX53C BDW23 BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B
Contextual Info: 1989963 b l de CEN TR A L I SEMICONDUCTOR oocm ns a 61C 00195'^ W~ POWER DARLINGTON TRANSISTORS EPOXY it H le = le NO. Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mhz hFE @IC Min - Max NPN PNP Amps BDW23 BDW24 : 6.0 45 50 750 - 20,000