0001S Search Results

LM 3373

Contextual Info: 4*ÏE J> m S C IE N T IF IC / MINI-CIRCUITS most widely used flObflflll 0001S33 35b « S C C _ Frequency Mixers Model TAK-5 LEVEL 7 +7dBm LO, up to +1dBm RF] JgSl computer-automated performance data typical production unit / for data of other models consultfactory

diode IN4000

Abstract: 1N29B IN4000 IN4000 silicon diode Zener diode ZTK in2970 IN4000 series IN4000 diode IN3993 IN2987
Contextual Info: niCROSEni coRP 51E D • bll5abS Microsemi Corp. f Ti* atme expem SA STA CA SCOTTSDALE, A Z F o r m o re in fo rm a l,o n call: 602 941-6.10» 0001S5T 0 0b rise ■ 1NZ970 thru 1N3015B and 1N 3993 thru 1 N 4000A FEA TU RES • ZENER VOLTAGE 3.9 to 200V • VOLTAGE TOLERANCES; ± 5 % , ± 1 0 %

HDB3 schematic

Abstract: VL80C75-PC
Contextual Info: V L S I TECHNOLOGY INC Ifl VLSI D e | =1300347 0001S2Q 0 ^ T - l S - i h V i Te c h n o l o g y , in c . VL80C75 T1 INTERFACE FEATURES DESCRIPTION • Supports T1, T1C, and CEPT data rates The VL80C75 is a general purpose PCM Line Interface circuit. It Is designed Ho

VE67

Abstract: ve47 AC/ve47
Contextual Info: MICROSEMI CORP/ MICRO EBR SbE T> • busso? 7 ^ 2 3 - OS MICRO QUALITY / 0001S-ÎS m 3 B M L SEMICONDUCTOR, INC 1 Amp Epoxy Bridge Rectifiers ve Series Controlled Avalanche Series with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-controlled Avalanche Series with 50V, 100V,

7G06P1

Contextual Info: n IQMR2ÛCK VL REV ECO-09-0001S9 E C 0 - 1 1-01 3921 A M A T E R IA L S ; -H O U SIN G - T H E R M O P L A S T IC P ET P O L Y E S T E R F L A M M A B IL IT Y R A TIN G UL 9 4 V -0 . - S H IE L D - .010" THICK, C 26800 B R A S S P R E P L A T E D WITH aO^INCH MIN SE M I-B R IG H T

pin configurations of 24c04 1

Abstract: 24C04 GGG15 78moh
Contextual Info: ROHN C O R P / EXEL MELECS bbE D • 702^014 0001SÔ2 MICROELECTRONICS XL24C04 Bxcelkrìce in E* Preliminary ÖSb 4,096-Bit Serial Electrically Erasable PROM 5 Volt Only Operation FEATURES ■ Low Power CMOS — Active current less than 1mA — Standby current less than 2yA

Contextual Info: 'S PERFORMANCE SEMICONDUCTOR 50E D m TObESi? 0001St.fi P33PCT139,139A, 139B m& vamgg HIGH-SPEED DUAL 1-0F-4 DECODER T - Ù x? ~ 2 \~ S ~ £ -' X r-

Contextual Info: AUGAT/ INTCON PR] T GP D • 1GTS33S 0001S71 ^3^ IAUIP A S S * SERIES Space-Saver» Slide Switches « Gold Contacts Standard_ f t ! SPECIFICATIONS C ontacts:. gold Contact Rating:.0.4VA max. at 20VDC or peak AC

mrc 444

Abstract: ASE22G ASE42 intcon XR210 alcoswitch Skc 4p3t ra 6PDT switch Slide Switch 4p3t 4P3T
Contextual Info: AUGAT/ INTCON PRDT GP 4TE D • 1CH5335 0001S5T =534 ■ A U I P ASE/F/FO SERIES A-Zs-ji Auto Insertable Slide Switch • Telecom Grade • Surface Mountable SPECIFICATIONS C o nta cts:.gold: .000030" over .000100" nickel .silver: .0000200" over nickel flash

GTO thyristor

Abstract: SKGH thyristor tt 31 1600 thyristor TT 110A GTO MODULE
Contextual Info: ISE 0 I 813U.71 0001SQ5 3 | S^MIKRON.INC V drm V V rrm V 800 1000 1200 1400 1600 15 15 15 15 15 T k .Z3 seMIKRDn SEMIPACK 3 GTO Thyristor/ Diode Modules SKGH 500/08 SKGH 500/10 SKGH 500/12 SKGH 500/14 SKGH 500/16 SKGH500 GTO thyristor data Symbol SKGH 500

SEL3910A

Abstract: ma 3810 SEL3410
Contextual Info: 71107m 0001S44 47S « S A K J SANKEN T-1 Contact Mount High Intensity Type Non-Diffused SEL 3810 A SEL 3910 A SEL 3210 S SEL 3410 E SANKEN LIGHT EMITTING DIODES FEATURES • Thermal Capability by Thick Collar • Low Profile • High R eliability/Long Life under Contact

HBR5034X

Abstract: reverse vending machine
Contextual Info: SSE D • Hb7fllSa 0001S3S 272 « I I S T STANLEY ELECTRIC CO LTJ HI-SUPER BRIGHT LED LAMP round shape type <f>5 HBR5034X/EBR5034X SERIES ■ Package Dimension ■ FEATURES • • • • • • • WIDE DIRECTIVITY TYPES ARE SERIALIZED A0 = 40DEG.) GaAIAs HI-SUPER BRIGHT, DIFFUSED TYPE

Contextual Info: r Sa n k e n electric co ltd 55E D 7^0741 0001S2Ô SÛT H S A K J Silicon NPN Triple Diffused Planar Darlington Silicon PNP Epitaxial Planar Darlington •Maximum Ratings j iif :| S l i i l i i l l l f f 1 Ta = 25°C :ff§pm iljfiis PNP um. 1 C ollector-to-B ase Voltage

Contextual Info: APEX M I C R O T E C H N O L O G Y CORP b?E D • 0fl7flb3b 0001S04 7^7 ■ AMT PA08 • PA08A APEX MICROTECHNOLOGY CORPORATION » APPLICATIONS HOTLINE 8 0 0 546-A PEX 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • WIDE SUPPLY RANGE — +15V to ±150V

qml-38535

Contextual Info: in AM D REVISIONS DESCRIPTION DATE m-MO-QA APPROVED REV SH EE T SH EET R E V STATUS O F SH EETS 22 23 24 25 REV 10 SH EE T 16 12 19 17 20 21 PMIC N/A D EFEN SE ELECTR O NICS SU P P LY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE

PEEL22V10AZ

Contextual Info: September 1994 Preliminary Commercial INC. TM . PEEL 22V10AZ -15/-25 CMOS Programmable Electrically Erasable Logic Device Features Ultra Low Power — Ice = 25p.A typical at standby — Icc = 3.5mA (typical) at 1MHz — tpD = 15ns and 25ns versions • Architectural Flexibility

HY514460

Contextual Info: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

Contextual Info: PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • Multiple Speed, Power, Temperature Options — Speeds ranging from 5ns to 25ns — Power as low as 37mA at 25MHz — Commercial and industrial versions available

Contextual Info: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The HY5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: F l 7.5 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Semiconductor Description Mechanical Dimensions m Features • HIGH CURREHT CAPABILITY WITH LOW V F ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ SUPERIOR M ETAL PROCESS ■ M EETS UL SPECIFICATION 94V-0

Contextual Info: Central CZT2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and

Contextual Info: ERICSSON COMPONENTS INC ERICSSON It,E D • 3373bö0 QOOISSS 1 ■ ^ September 1989 T - 7 S ' / / - n PBL 3766 Subscriber Line Interface Circuit Advance Information Description Key features The P B L 3766 Subscriber Line Interface Circuit SLIC Is a monolthic integrated circuit

SKT431F

Contextual Info: SEMIKRON o | is e INC ô i3 b b 7 i •x-zs,h i V drm V rrm V Itrm s m a xim u m v a lu e s fo r c o n tin u o u s o p e ratio n tq (Tvj 900 A = 125 °C) | 1100 A hvw (sin. 180; Tease = . .° C ; 50 H z ; DSC) 350 A (84 °C) 430 A (82,5 °C) US 400 15

HD6475368CP

Abstract: HD6475348CP programmers HD6475368CP HD6475348rf CPU H8 534 H8/536 HD6475348RCP HD6435348R HD6435348S HD6435368R
Contextual Info: OMC 932723248 Hitachi Single-Chip Microcomputer H8/534, H8/536 HD6475348R, HD6435348R HD6475368R, HD6435368R HD6475348S, HD6435348S HD6475368S, HD6435368S Hardware Manual ADE-602-038B Preface The H8/534 and H8/536 are high-performance single-chip Hitachi-original microcomputers,