000203B Search Results

Contextual Info: ADAPTEC INC -m’ •wi A I 1j C ; ' - MME D E3 OSlMMlb 000203b «ì E3AAC 'm 7 1 6 Single-Chip PC XT/AT M a ss Storage Controller DATA BUFFER SRAM 256K MAX DRAM IM MAX 11 MB/sec 3.5/2.5 INCH HARD DISK AIC-7160 8 MB/sec MASS STORAGE CONTROLLER AT BUS 32 Mb/sec

Contextual Info: QS723620 Ô High-Speed CMOS 1 K X 3 6 Clocked FIFO with Bus Sizing QS723620 FEATURES • Fast cycle times: 20/25/30 ns • Selectable 36/18/9-bit word width for both input port and output port • Byte-order-reversal function i.e., “big-endian” o “little-endian” conversion

RP65C02

Abstract: RP65C02G 65c02 6502 MPU 65c02 ricoh
Contextual Info: RICOH CORP/ ELECTRONIC III 54E D • 7744btHD DDGED12 E T I B P C H / CMOS 8 b it MPU R P 6 5 C 0 2 G / G - 0 6 PIN C O N F IG U R A T IO N TOP VIEW ■ G ENERAL DESCRIPTION The RP65C02 is 8-bit CMOS MPU. It has the instruction set and pins which are fully compatible with the NMOS

FRS300BA50

Contextual Info: DIODE M ODULE f.r.d FRS300BA50 UL; E76102 (M) F R S 3 0 0 B A is a high speed isolated diode module designed for high power switching application. F R S 3 0 0 B A is suitable for high frequency application requiring low loss and high speed control. • •

LTL-4221

Abstract: LTL-4231 LTL-4251 c4231 4202N
Contextual Info: LITE-ON INC B1E Î D SS3b3b7 0Q0S031 T *LTN T-l 3mm SOLID STATE LAMPS LTL-4201/4201N RED -LTL-4211/4211N BRIGHT RED .LTL-4221/4221N HIGH EFFICIENCY RED LTL-4231/4231N GREEN LTL-4251/4251N YELLOW LTL-4291 /4291N ORANGE FEATURES • LOW POWER CONSUMPTION,

Contextual Info: h Preliminary BENCHMARQ l3 C |2 0 4 0 Gas Gauge 1C With SMBus Interface Features General Description ► Provides conservative and repeatable measurement of available charge in NiCd, NiMH, and lithium Ion rechargeable batteries The bq2040 Gas Gauge IC With

FF 75 R 1200 KL

Abstract: kl diode
Contextual Info: FF 75 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0 ,1 RthJC DC, pro Baustein / per module 0 ,2

Hall Siemens ksy10

Abstract: 131 hall sensor magnetic field sensor siemens hall sensor 80 L magnetic pickup sensor KSY10 magnetic pickup speed sensor R20 marking Siemens Hall hall sensor ksy 11
Contextual Info: SIEMENS K SY10 Hall Sensor Features • • • • • High sensitivity High operating temperature range High linearity Low offset voltage Low TC of sensitivity and internal resistance • Plastic-encapsulated miniature package 0.15 H 0 .1 5 0 . 1 5 * 0,07

Contextual Info: I f l 2 3 Sb 0 5 0002020 321 SIEM ENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Prelim inary SAB 80C515/80C515-16 SAB 80C535/80C535-16 • 8 Kx 8 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM

Contextual Info: FF 75 R 12 KL T h erm isch e Eigenschaften Transistor T ran sistor R thJC Elektrische Eig ensch aften Electrical properties Höchstzulässige W erte Maximum rated values V ces Ic R thC K 1200 V 75 A Therm al properties DC, pro Baustein / per module DC, pro Baustein / per module

LED Diode CXC

Contextual Info: WESTCODE SEMICONDUCTORS SWxxC/DXC680 Capsule Rectifier Diode C o nsists of a diffused silicon ele m e n t m ounted in an he rm etic ce ra m ic cold w e lde d capsule. A vaila ble in industry stan dard and thin housings. Ratings ^R R M v RSM Unless otherwise stated Tj = 160°C

25CC

Abstract: 256kx8 sram
Contextual Info: WDI EDI8F8257C 256Kx8 SRAM Module ELECTRONIC DESIGNS. INC 256Kx8 Static RAM CMOS, Module The EDI8F8257C is a two megabit CMOS Static RAM based on Features two 128Kx8 Static RAMs mounted on a multi-layered epoxy 256Kx8 bit CMOS Static laminate FR4 substrate.

SWT200K

Abstract: SWT080K J180 GS035
Contextual Info: SÛUARE D CO/ GENERAL ^5 3 9 1 8 5 9 0 GENERAL SEMICONDUCTOR D ÔS2SSDÛ 0G G 20 35 95D 0 2 0 3 5 U N ID IR E C T IO N A L ^ General ^ Semiconductor J^L « Industries, Inc. FEATURES Up to 400A Peak Pulse Current High Holding Current Nanosecond Response Time

GAL20XV10B-20LP

Abstract: ali 1631 GAL20XV10B SOCN ICE 47E
Contextual Info: LATTICE SEMICONDUCTOR M7E D 530^4^ Lattice DDDSG32 ILAT 4 G A L20XV10B T - 1/ 6 -1 9 - 0 7 High-Speed E’CMOS PLD Generic Array Logic FU N CTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax = 100 MHz