000320B Search Results

pmd20k200

Abstract: diode OA-70 20K150
Contextual Info: SEflTECH CORP 56E D • fiia H B I 000320b 204 150 WATT 14 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L Collector Emitter Voltage PMD 20K120 PMD 20K150 PMD 20K200 Collector Base Voltage PMD 20K120 PMD 20K150 PMD 20K200 FEATURES

Til 322A

Abstract: FFD11 280/Til 322A
Contextual Info: S A R A Chipset Technical Manual Segmentation SARA Hardware Description Chapter 3. Hardware Description 3.1 Segmentation SARA Hardware Description 3.1.1 Segmentation SARA Internal Block Description Figure 3-1 shows a block diagram of the Segmentation S A R A chip.

IL43 marking

Abstract: mb 3221 IL43 bit 3105 BTS 308 0314E irf 345h 2tu marking code BTS 716 G cj-cc
Contextual Info: P r e l im in a r y I n f o r m a t io n PMC PMC-Sierra, Inc. P M 63 44 EQUAD QUAD E1 FRAMER ISSUE 3 FEA TU RES • Integrates four full-featured E1 framers and transmitters in a single device for terminating duplex E1 signals. • Software and functionally compatible with the PM6341 E1XC Single E1

D3254

Contextual Info: QS7024A PRELIMINARY High-Speed CMOS 4K x 16 Asynchronous Dual-Port RAM Q FEATURES QS7024A DESCRIPTION High-speed asynchronous dual-port architecture Access times from either port, 20/25/35/55 ns Industry standard pin-out Independent port access and control

SO-8 LTLS e3

Abstract: ltls e3 IC LTLS E3
Contextual Info: M O S E L V TTE U C PRELIMINARY V52C8256 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 5 1 2 X 8 SAM HIGH PERFORMANCE V52C8256 Max. RAS Access Tim e, tRAC 60 70 80 60 ns 70 ns 80 ns Max. CA S Access Time, (tcAc) 15 ns 20 ns 25 ns Max. Column Address Access Tim e, ( t ^ )

71c1000

Abstract: GA032 trw 1014 RAS 0510 GM71C1000 GM71C1000-80 GM71C1000-12
Contextual Info: GM71C1000 WORDS X 1 BIT CMOS DYNAMIC RAM Description Pin Configuration The G M 71C1000 is the new generation dynamic RAM QDD3202 1048576 1 M G ST PRELIMINARY SPECIFICATION REV. 0 ^ 18 PLASTIC DIP TOP VIEW organized 1048576 x 1 Bit, GM 71C1000 has realized

Contextual Info: '> 3 7 v o w Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D5SC4M Case : ITO-220 40V 5A • T j 15 0 t: • P rrsm •7 J L Æ -J b K •S R S S •D C /D C □ » { - ; ? •mm. y - A , oa«§§ •aa, m x-sjim s • ü Ê tè ü RATINGS • Îê fc fU ^ Æ fê

Contextual Info: WS57C45 HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • DESC SMD Nos. 5962-88735/5962-87529 — 25 ns Setup — 12 ns Clock to Output • Pin Compatible with AM27S45 and CY7C245 • Immune to Latch-Up • Low Power Consumption