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    Untitled

    Abstract: No abstract text available
    Text: EL7202C/EL7212C/EL7222C F e a tu r e s G e n e ra l D e sc r ip tio n • Industry standard driver replacement • Improved response times • Matched rise and fall times • Reduced clock skew • Low output impedance • Low input capacitance • H igh noise im munity


    OCR Scan     		PDF EL7202C/EL7212C/EL7222C EL7202C/EL7212C/EL7222C DS0026 12C/EL7222C

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 2 8 1 0 0 HHYUNDAI S e r ie s 128K X 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628100 4L750Ã 000373b HY628100P HY628100LP HY628100LLP HY628100G

    80c31n

    Abstract: IS80C51 i80c51 80c31 mhs 80c51/31 MHS
    Text: P R E V IE W M l DATA SHEET_ _8 0 C 3 1 U / 8 0 C 5 1 u HIGH SPEED 0 to 42 MHz SINGLE-CHIP 8 BIT MICROCONTROLLER 80C31|i : ROMLESS VERSION OF THE 80051^1 80C31 ji/80C51 n-S : 0 TO 20 MHz 80C31 |i-S/80C51 (i-25 : OTO 25 MHz 80031p/80C51|i-30 :0 TO 30 MHz


    OCR Scan     		PDF 80C31 ji/80C51 80C31 i-S/80C51 80031p/80C51 n/80C51 fi-36 80c31n IS80C51 i80c51 80c31 mhs 80c51/31 MHS