Untitled
Abstract: No abstract text available
Text: DIODE MODULES Ratings and Specifications Í m iímíiibíI 600 volts class general use diode modules/E series Dovicu ty p i’ V rrm V rsm lo Ifsm Ft V fm Irrm Rth j-C Package Volts Volts Amps. Amps. A2s Volts mA °C/W . 6RI30F 060 600 660 30 360 520 1.10
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6RI30F
R604A
6Rlb0E-060
R605A
R606A
6RI100E
SRI150E-060
ERG28-12
ERG78-12
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Untitled
Abstract: No abstract text available
Text: H Y 6 2 V 8 1 0 0 A S e r ie s 128Kx8-blt CMOS SRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that
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128Kx8-blt
HY62V8100A
55/70/85/100ns
100/120/150/200ns
1DD04-11-MAY94
GG3773
HY62V8100ALP
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6ri30f
Abstract: Diode C 1320 6RI30G-160 R702 2RI100E 2RI60E-060 6RI100E 6RI150E-060 6RI50E-060 IMF 080
Text: DIODE M O D U LES | P f P i | Ratings and Specifications SutimtimB H 600 volts class general use diode m o d u les/E series D iivicu ly p t' V rrm V rsm lo Ifsm Ft V fm I rrm A m p s. A m p s. A 2s V o lts mA Rth j-C Package °C/W V o lts V o lts 6RI30F 060
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6RI30F
6RI50E-060
6RI100E
6RI150E-060
2RI60E-060
2RI100E
2RI150fc
2RI250F-060
R604A
R605A
Diode C 1320
6RI30G-160
R702
IMF 080
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