00147M Search Results

E1006

Abstract: buz67 TO-238AA QS 424
Contextual Info: ôôD D • 88D Ö 23 s b 0 s 14714 00147m D 2 «sieg 'T '- 7 ? ~ J 3 BUZ67 SIEMENS AKTIENGESELLSCHAF_ N-Channel Main ratings a 400 V Draln-source voltage I^DS = 9,6 A Continuous drain current h Draln-source on-reslstance ^DS on = 0,4 Si Description

buz349

Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: CY7C123 rS CYPRESS 256 x 4 Static RAM Functional D escription Features • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 10 ns (military) • Low power — 660 mW (commercial)

h a 431 transistor

Abstract: BUZ349 transistor buv y 431 transistor
Contextual Info: ObE D N AMER P H I L I P S / D I S C R E T E PowerMOS transistor 1^ 53^31 0014745 t BUZ3491 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

DS1642

Abstract: MK48T02
Contextual Info: 0S 1642 DALLAS .Nonvolatile TimekeepingDS1642 RAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Form, fit, and function compatible with the M K48T02 Timekeeping RAM A7C 1 24 □ Vcc A6 Q 2 23 □ A8 A5 Q 3 22 □ A9 A4 Q 4 21 □ WE A3 C 5 20 □ ÔË