001747B Search Results

CA 3055

Abstract: ca3055 RCA3055 d1747 KD 3055
Contextual Info: 01 •3875081 G E SOLID ~ÇE |3â750fll 001747b *1 STATE General-Purpose Power Transistors 01E 17476 D T -2 3 -f - &CA3054, RCA3055 File Number 618

Contextual Info: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • T h e ID T 7 082 4 is a high-speed 4K x 16-bit Sequential Access Random Access M em ory (S A R A M ). T h e SA RA M

Contextual Info: TOSHIBA iDIS CR ETE/ OP TOÏ 9097250 TO S H IB A D IS C R E T E /O P T O 99D 17475 D T -4 /-& 5 TLP575 GaAs Unit in ran IRED & PHOTO-TRANSISTOR A C LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER.

Contextual Info: Preliminary Data Sheet July 1995 AT&T Microelectronics DSP1627 Digital Signal Processor 1 Features 2 Description • Optimized for digital cellular applications with a bit manipulation unit for higher coding efficiency The DSP1627 is AT&T's first 0.5 pm digital signal pro­

MSM51V17800

Abstract: J00j
Contextual Info: O K I Semiconductor MSM5 1 V17800_ 2,097,152-Word x 8-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V17800 is OKI's CMOS silicon gate process technology.

headland 386

Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
Contextual Info: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

Contextual Info: O K I Semiconductor MSM51V17800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V17800 is OKI's CMOS silicon gate process technology.

74HCT10

Contextual Info: 1 ' 4 3 -Z/-CO Technical Data_ CD54/74HC10 CD54/74HCT10 HARRIS SEMICOND File Number 1551 SECTOR 27E D 430H271 0017475 5 *HAS High-Speed CMOS Logic Triple 3-Input NAND Gate Type Features: • B u tte re d inpu ts • Typical propagation delay = 8 ns @ Vcc = 5 V, CL = 15 pF, TA = 25° C

Contextual Info: INTERNATIONAL RECTIFIER bSE ]> B MÖSS452 0017474 TTQ PD-2.260 hternational S Rectifier 224c n q . s e r ie s SCHOTTKY RECTIFIER 220 Amp Major Ratings and Characteristics Characteristics lF AV Rectangular Descri ption/Features 224CNQ. Units 220 A 35 to 45