002B5 Search Results

Contextual Info: I l b^E D • APX bb53S31 002b544 1T1 A N AMER PHILIPS/DISCRETE BYD11 SERIES CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded SOD-91 ID* envelope, intended for general purpose rectifier applications.

BY709

Abstract: by707 BY708
Contextual Info: bTE D • bbS3131 002b5El bT4 ■ APX A BY707 BY708 BY709 _ SILICON E.H.T. SO FT -R EC O V ER Y RECTIFIER DIODES* E .H .T . rectifier diodes in glass envelopes intended for use in high-voltage applications such as the highvoltage supply of television receivers and monitors. The devices feature non-snap-off characteristics.

BFQ10

Contextual Info: PHILIPS INTERNATIONAL MIE J> WB 711002b 002b51S S Ö P H I N BFQ10 to 16 T -2 7 -2 7 — DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, with electrically insulated gates and a common substrate connected to the envelope; intended

M2883

Abstract: ALPS 102 BYV34
Contextual Info: SSE D N AMER PHILI PS/ DI SCR ET E • bbSBTBl 002B573 3 ■ BYV34 S E R IE S 7 = 0 3 - / ^ ULTRA FAST REC O VER Y DOUBLE RECTIFIER DIO DES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic.- They are intended for

Contextual Info: 5Ü GEC PLESSEY MAY 1996 S I' M I C O N I U C T O R S ADVANCE INFORMATION DS4054-2.2 WL100 WLAN INTERFACE CIRCUIT The WL100, together with the DE6003 frequency hopping radio transceiver, im plem ents a wide variety of WLAN applications where NRZ encoding is used.

Contextual Info: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

BYD14

Contextual Info: N AUER PHILIPS/DISCRETE bb53T31 002bS52 27fl • APX BYD14 SERIES b^E D L M AINTENANC E TYPE CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes and intended fo r general purpose rectifier applications.

Contextual Info: IDT70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max. • Low-power operation

R5F21368snfp

Abstract: 06B2D 0025DH 00285H
Contextual Info: Datasheet R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/36T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

06B2D

Abstract: 0029E 000E8H 002C1H 0028b 0027AH 0025DH 00285H 06B13
Contextual Info: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0001 Rev.0.01 Feb 23, 2011 Overview 1.1 Features The R8C/38T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides

06B2D

Abstract: p9530 0023AH 0025DH 00285H
Contextual Info: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

R5F21368snfp

Abstract: R5F21368 r5f2136csnfp 0025DH 00285H
Contextual Info: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0001 Rev.0.01 Jan 28, 2011 Overview 1.1 Features The R8C/36T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides

BYD34D

Abstract: BYD34J BYD34G BYD34M MCB984 BYD34K c1020 DTL philips
Contextual Info: N AMER P H IL IPS/DISCRETE b'lE D • Philips Semiconductors bbSa^l Avalanche fast soft-recovery x. . rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID implosion diode glass envelopes. They are intended for television and

Contextual Info: Advance Data Sheet January 1997 microelectronics group Lucent Technologies Bell Labs Innovations LC020 Single-Output Series Power Module: 18 Vdc to 36 Vdc Inputs; 20 W Features • Low profile: 9.9 mm 0.390 in. with standoffs, 9.53 mm (0.375 in.) with standoffs recessed

Contextual Info: bitemational ^Rectifier PD - 9.1098B IR F 7106 PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

Contextual Info: International [^Rectifier PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching

96-Seg

Contextual Info: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features

Contextual Info: t.'lE D • bbSB^l QQ2 bS 4Q SSb H A P X A B Y 722 B Y 723 B Y 724 SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES* E H T rectifier diodes in glass envelopes intended for use in high-voltage applications e.g. the high-voltage supply of television receivers and monitors, at frequencies in excess o f 30 kHz. The devices feature non­

Contextual Info: N AUER PHILIPS/DISCRETE b'lE ]> • APX bbS3ci31 DD2bS3Q bD7 bYHD JL BY716 SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in general purpose high-speed high-voltage applications. The devices feature non-snap-off characteristics. Because of the small envelope, the diodes

GP001 EPIC

Contextual Info: 37E D Ol 4302271 002bSfl7 b IHAS .Radiation-Hardened High-Reliability ICs HARRIS SEfllCOND SECTOR GP517/1RZ Advance Information I3 > High-Reliability, Radiation-Hardened C M O S/SO S interrupt Controller A e ro s p a c e C lass S S c re e n in g Features:

Philips FA 145

Abstract: TCS230
Contextual Info: User’s Manual 16 R8C/36T-A Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3xT-A Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

BLOCK DIAGRAM OF TOUCH sensor

Abstract: r5f2136cs 002FE R5F21368snfp R5F21368s R01US0007EJ 0025DH 00285H TCS230
Contextual Info: User’s Manual 16 R8C/36T-A Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3xT-A Series Preliminary All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

R5F2156CGJFP

Abstract: 0025DH 00285H 001F6H R5F21568HKFP
Contextual Info: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/56E Group, R8C/56F Group, R8C/56G Group, R8C/56H Group RENESAS MCU 1. R01DS0042EJ0010 Rev.0.10 Mar 15, 2011 Overview 1.1 Features The R8C/56E Group, R8C/56F Group, R8C/56G Group, R8C/56H Group single-chip microcontrollers MCUs

R5F2156CGJFP

Abstract: ISO-11898-1 0025DH 00285H 001F6H
Contextual Info: Datasheet R8C/56E Group, R8C/56F Group, R8C/56G Group, R8C/56H Group RENESAS MCU 1. R01DS0042EJ0200 Rev.2.00 Sep 05, 2012 Overview 1.1 Features The R8C/56E Group, R8C/56F Group, R8C/56G Group, R8C/56H Group of single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1