003MM Search Results

SSM2210

Contextual Info: SIE D ANALOG DEVICES INC m 081b800 003MMb7 853 H A N A A u d io u u a i M a tc h e d A N A U O G -r-fs-as- NPN Transistor D EVICES FEATURES • • • • • • • Very Low Voltage N o ise @ 100Hz, 1nV/VHz MAX Excellent Current Gain Match. 0.5% TYP

Contextual Info: TSW—209-09—S-S—RJ arrifec TSW-108—05—S-Q TSW-116-11—G-S I'i i. Mates vith: SSW. 5 SQ. ESW. ESQ. BCS. E 5W. IDSD. IDSS. CES, S _W TYPE STRIP NO. PINS PER ROW PIN CENTERS 11 Precision Drawn Terminal Strips H " I ^ f k i i i _ S ta n d a rd I O V V “ S trip

KM44C4004B

Contextual Info: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

50t65

Abstract: bd650 BD644
Contextual Info: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.

Contextual Info: DRAWING THIS MADE DRAWING YD 4 IN IS THIRD ANGLE UNPUBLISHED. COPYRIGHT RELEASED 19 BY ANP FOR 2 3 PROJECTION PUBLICATION I NCORPORATED . ALL LOC ,19 INTERNATIONAL RIGHTS D I 5T CF RESERVED. 39 R E V I 5 I ON! ZONE DESCRIPTION LTR DATE APPD REL 96-7918-016-2,-4,-5

B0680

Abstract: BD675A BD676A BD677A BD678A BD679A BD680A
Contextual Info: Preliminary «pacification Silicon Darlington power transistors DESCRIPTION QUICK REFERENCE DATA PNP epitaxial base transistors in a monolithic Darlington circuit in a TO-126 SOT32 plastic envelope intended for audio and video applications. NPN complements are

Contextual Info: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RElEa5E6 FÒR PjBl iîa Tiôh L BI GUTS RESERVED. P INCORPORATED. 2.5 TYP REF 2.5 ADDED P L A T IN G NOTE CHANGED TO TYC O LOGO REF 5.675 ROW A - ROW A ROW - ROW B - - ROW BG ROW C ROW D ROW E

B1304

Abstract: cl9100 FE050N FE150N FE150N9 UL-1950 1vw marking code
Contextual Info: Data Sheet July 1998 Lucent Technologies Bell Labs Innovations FE050N and FE150N Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 5.2 Vdc Output; 50 W to 150 W Features • High efficiency: 82% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.

Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORATION. ALL RIGHTS 20 LOC 2.5 TYP ROW A ] CED— ROW B [ ^ - j3 ROW C £|gp ROW D rgp 3 CED - -E gp—] CED LIXLL l^ tJ ^

79c965

Abstract: AMD 79c97* lance
Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices Am79C965 PCnet -32 Single-Chip 32-Bit Ethernet Controller DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet con tro ller for 486 and V ideo Electronics Standards Association VESA local buses ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and

EL B17 A017

Abstract: EL B17 C007 CodeTAP manual W002 SLOT PGA 370 applied microsystems power tap probe tip EL B17 C012 ampliflex D-10 EL B17 C017
Contextual Info: Rev. 4 80960Rx Debug Connector Design Guide August, 1997 Order Number: 272812-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s

ABE 422

Contextual Info: DRAWING MADE IN THI 42.2 A 1. 2 . A A C H A R A C T E R I S T I C I MP E DA NC E : 1 5 0 n i 1 0 n MEASURED D I F F E R E N T I A L L Y . L I N E TO L I N E SKEW CWI THI N A P A I R ) : THEN 2 0 0 p s e c ( ME A S UR ED AT 50%) . LESS A S S Y I D E N T I F I C A T I O N L A B E L TO BE L O C A T E D

BD679

Abstract: BD675 BD680 T-988 BD676 BD678 BD682 BD684 D0344
Contextual Info: BD675; 677 BD679; 681; 683 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684. QUICK REFERENCE DATA

Contextual Info: COM’L: -7.5 Î1 MACH210A-7 Advanced Micro Devices High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins 32 Outputs ■ 64 Macrocells 64 Flip-flops; 2 clock choices ■ 7.5 ns 4 “PAL22V16” blocks with buried macrocells ■ tpD

CodeTAP

Abstract: HP 16520a CodeTAP manual AMP 140 pin connector HP lcd connector 40 pin to 30 pin to 7 pin corelis JTAG CONNECTOR EL B17 C007 ampliflex SLOT PGA 370 corelis jtag
Contextual Info: 80960Rx Debug Connector Design Guide Rev. 4 April 1998 Order Number: 272812-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability

22FL-SM1-TB

Contextual Info: FL CONNECTOR 0.5mm Emboss Tape Connectors for FFC and FPC .020" pitch Features ––––––––––––––––––––––– • Heat resistant design suitable for surface mounting This surface mountable connector's housing is made of heat

Contextual Info: FL CONNECTOR 0.5mm Emboss Tape Connectors for FFC and FPC .020" pitch Features ––––––––––––––––––––––– • Heat resistant design suitable for surface mounting This surface mountable connector's housing is made of heat

E60389

Abstract: 20-flS 06FL-SM1-TB
Contextual Info: FL CONNECTOR 0.5mm Emboss Tape Connectors for FPC .020" pitch Features ––––––––––––––––––––––– • Heat resistant design suitable for surface mounting This surface mountable connector's housing is made of heat

amd215

Contextual Info: FIN A L COM’L: -15/20, Q-25 a Advanced Micro Devices MACH445-15/20, Q-25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 100-pin version of the MACH435 in PQFP ■ Up to 20 product terms per function, with XOR ■ 5 V, in-circuit programmable

651F

Abstract: BD649F BD650F BD643F BD644F BD646F BD648F BD652F bd64 IC/651F
Contextual Info: BD643F; 645F; 647F BD649F; 651F SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistors in a SOT 186 envelope w ith an electrically insulated mounting base. PNP complements are BD644F, BD646F, BD648F, BD650F and BD652F. QUICK REFERENCE D A T A

Contextual Info: N E C ELECTRONICS INC blE D • \T W 7 f* W M li W NEC Electronics Inc. b 45752S □ □ 3 43T 4 ITI B N E C E MC-424000A32 4,194,304 X 32-Bit Dynamic CMOS RAM Module 7 W Description Pin Configuration The MC-424000A32 is a fast-page dynamic RAM mod­ ule organized as 4,194,304 words by 32 bits and de­

Contextual Info: D DO N O T SCALE 0 o 2 0 ± 0 » 0 2 R T A N G E N T TO L 5 8 0 o2 5 M A X F L A T P E R M I S S I B L E 1 „58 R -2 5 ,5 R DATE SYM 28AP95 F REVISION WAS «S3-E5~ 12160688; RENUMBERED 08JN95 FI 1 ,5 4,0 R E V ISE D AUTH RECORD DR CK R E V ISE D ,

Contextual Info: MACHINING SOLUTIONS LARGE OR SMALL, WE DO IT ALL. Whether you’re interested in a few prototype pieces or large scale production, Fair-Rite is your solution. Machining parts for small scale production is significantly more cost-effective than fabricating tooling and reduces lead times

Contextual Info: BD826 BD828 BD830 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in TO-202 plastic envelopes, recommended for driver stages in hi-fi amplifiers and television circuits. N-P-N complements are BD825, BD827 and BD829. Matched pairs can be supplied.