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    Abstract: No abstract text available
    Text: D E V E L O P M E N T DATA TIP3055T This data sheet contains advance information and specifications are subject to change without notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement TIP295ST they are primarily intended


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    PDF TIP3055T TIP295ST O-220 bbS3R31 0D3SQ31 003S032

    TIP3055T

    Abstract: USA060-1 transistor 8771 transistor 902
    Text: DEVELOPMENT DATA TIP3055T T h is data sheet contains advance inform ation and «peclfleationi are subject to change w ithout notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. W ith its p-n-p complement T IP 2 9 5 S T they are prim arily intended


    OCR Scan
    PDF TIP3055T TIP295ST T0-220. bb53T31 003S03E TIP3055T USA060-1 transistor 8771 transistor 902