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    infrared burglar alarm

    Abstract: BFR200 FET 1127 L7E transistor fet junction transistor
    Text: bt.SB'IBl 0055B07 b*ì4 H A P X Philips Semiconductors D ata sheet statu s Preliminary specification d a te o f issue April 1991 BFR200 N-channel junction field-effect transistor N AUER P H I L I P S / D I S C R E T E FEATURES • Ultra-low leakage performance


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    PDF 0055B07 BFR200 OT143 infrared burglar alarm BFR200 FET 1127 L7E transistor fet junction transistor