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    9ZX21200AKLFT Renesas Electronics Corporation 12-output DB1200Z Derivative Visit Renesas Electronics Corporation
    9ZX21200AKLF Renesas Electronics Corporation 12-output DB1200Z Derivative Visit Renesas Electronics Corporation
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    Microchip Technology Inc DSC6121HI2A-00AK

    MEMS OSC XO 1.71V-3.63V 4SMD
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    DigiKey DSC6121HI2A-00AK Bag 800 1
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    NAC DSC6121HI2A-00AK 1
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    Alpine Electronics (Asia) Ltd RK27112A00AK

    POT 100K OHM 1/20W LOGARITHMIC
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    DigiKey RK27112A00AK Bulk 88 1
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    Avnet Abacus RK27112A00AK 21 Weeks 500
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    Chip1Stop RK27112A00AK Bulk 100
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    CoreStaff Co Ltd RK27112A00AK 110
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    Amphenol Positronic D9000AKNE0-AA

    D-SUB BACKSHELL, MACHINED ALUMIN
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    DigiKey D9000AKNE0-AA Bag 10 1
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    Amphenol Positronic D37000AKNE0-AA

    D-SUB BACKSHELL, MACHINED ALUMIN
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    DigiKey D37000AKNE0-AA Bag 10 1
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    Amphenol Positronic D25000AKNE0-AA

    D-SUB BACKSHELL, MACHINED ALUMIN
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    DigiKey D25000AKNE0-AA Bag 10 1
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    00AK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b712 smd

    Abstract: schematic diagram inverter 2000w IC25N040 MT702 CT712 MHN2200AT R888 SMB diode tp2256 Tp2350 c840 dell
    Text: SENS P10 Owner : Kevin,Lee Signature : HK,Park Robin,Cho APPROVAL TAURUS MAIN BOARD BA41-10013A PBA:BA92-01563A, SMT:BA92-00563B MP 1.0 - 0321 MARCH,21,2001 CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : P-IV Northwood


    Original
    PDF SFD-P10K SCD-P10K24 SDD-P10K8 SRW-P10K8 SFD-P10E SCD-P10E24 SDD-P10E8 SRW-P10E8 2200mA, iEEE1394, b712 smd schematic diagram inverter 2000w IC25N040 MT702 CT712 MHN2200AT R888 SMB diode tp2256 Tp2350 c840 dell

    Untitled

    Abstract: No abstract text available
    Text: ADV HI CRO TELECCINI 13E 0 £o2S?5S? Am7968/Am7969 00ak35<t 3 | ' T - l S ~37-e5 TAXIchip Integrated Circuits (Transparent Asynchronous Xmitter - Receiver interface PRELIMINARY • Drive coaxial cable directly or Interface with fiber optic data links • 32-100 Mbps (4-12.5 Mbytes/sec data throughput


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    PDF Am7968/Am7969 37-e5 28-pin BDOO7201 Am7968 Am7969 AM7968-125 AM7969-125

    Untitled

    Abstract: No abstract text available
    Text: 00AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,


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    PDF KM44V16100AK 16Mx4 16Mx4, 512Kx8)

    Untitled

    Abstract: No abstract text available
    Text: KM44V16000AS CMOS D R AM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,


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    PDF KM44V16000AS 16Mx4

    ICE ICC3

    Abstract: 44v16100
    Text: KM44V16000A, KM44V16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Fast Page Mode CM OS DRAM s. Fast Page M ode offers high speed random access of m em ory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5, -6,


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    PDF KM44V16000A, KM44V16100A ICE ICC3 44v16100

    Untitled

    Abstract: No abstract text available
    Text: KM4 4 V 16 0 0 0 AK C MOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,


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    PDF 16Mx4 16Mx4, 512Kx8) KM44V16000AK 0G34B34

    Untitled

    Abstract: No abstract text available
    Text: KM44V16100AS CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,


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    PDF KM44V16100AS 16Mx4

    KM48c8100A

    Abstract: No abstract text available
    Text: KM48C8000A, KM48C8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cucye 4K Ref. or 8K Ref. , access time(-5, -6,


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    PDF KM48C8000A, KM48C8100A KM48c8100A

    KM48c8100A

    Abstract: No abstract text available
    Text: KM48C8000A, KM48C8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cucye 4K Ref. or 8K Ref. , access time(-5, -6,


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    PDF KM48C8000A, KM48C8100A KM48C8000A KM48C8100A

    M5916

    Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
    Text: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5


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    PDF 11Mx9 KMM581000C KMM584Q0 KMM594000C-5 HKMM58100 KMM591000CN-7 M584Q00C-6 jKMM59400QC-6 KMM533100 KMM5361000C2/C2G M5916 533410 M5402 KMM591000CN-7 KMM5334100

    KM44C16100A

    Abstract: No abstract text available
    Text: KM44C16000A, KM44C16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,


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    PDF KM44C16000A, KM44C16100A 16Mx4 QG533b5 KM44C16100A

    KM44V16100A

    Abstract: KM44V16000A
    Text: KM44V16000A, KM44V16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Fast Page M ode CM OS DRAM s. Fast Page M ode offers high speed random access of m em ory cells w ithin the same row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5, -6,


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    PDF KM44V16000A, KM44V16100A 16Mx4 cibm42 KM44V16100A KM44V16000A

    Untitled

    Abstract: No abstract text available
    Text: KM48V8000A, KM48V8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 8,388,608 x 8 bit Fast Page Mode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. o r 8K Ref. , access tim e(-5, -6,


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    PDF KM48V8000A, KM48V8100A 13For

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs DRAM MODULE MH4M9B0DJA-6,-7,-8 FAST PAGE MODE 37748736-BIT(4194304-WORD BY 9-BIT)DYNAMIC RAM DESCRIPTION The MH4M9B0DJA is 41 94304-w ord x 9 -b it dynamic RAM and consists of nine industry standard 4M x 1 dynamic RAMs in SOJ. The mounting of SOJ on a single in-line package provides


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    PDF 37748736-BIT 4194304-WORD 94304-w 37748736-BIT Hfl25 Q02ti3fl2

    KM44C4000A

    Abstract: km44c4100a km44v4100a
    Text: KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    PDF KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A KM44C4000A km44c4100a km44v4100a

    KM48V8000A

    Abstract: No abstract text available
    Text: KM48V8000A, KM48V8100A CMOS DRAM 8M x 8 Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,


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    PDF KM48V8000A, KM48V8100A 13For KM48V8000A

    Untitled

    Abstract: No abstract text available
    Text: KM44V16000A, KM44V16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,


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    PDF KM44V16000A, KM44V16100A 16Mx4 2334T

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    PDF KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A

    Untitled

    Abstract: No abstract text available
    Text: KM48V8000A, KM48V8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fam ily of 8,388,608 x 8 bit Fast Page M ode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5 -6


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    PDF KM48V8000A, KM48V8100A 13For

    mps3904

    Abstract: MPS3903 MPS3904 transistor To92 transistor
    Text: MOTOROLA SC 1EE D XSTRS/R F I ti3ti7aSM Symbol Rating Unit Value VCEO - 40 Vdc Collector-Base Voltage VcBO 60 ' Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 100 mAdc Total Device Dissipation @ T a = 25°C Derate above 25°C Pd


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    PDF MPS3903 MPS3904 O-226AA) mps3904 MPS3904 transistor To92 transistor

    Untitled

    Abstract: No abstract text available
    Text: 00AK3 DRAM Module ELECTRONICS 00AK3/AS3, KMM372V3280AK3/AS3 Fast Page Mode 32Mx72 DRAM DIMM with ECC, 3.3V Preliminary GENERAL DESCRIPTION FEATURES The Samsung KMM372V320 8 0A is a 32M bit x 72 • Part Identification Dynamic RAM high density memory module. The


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    PDF KMM372V3200AK3 KMM372V3200AK3/AS3, KMM372V3280AK3/AS3 32Mx72 KMM372V320 16Mx4bit 400mil 48pin 168-pin