00E25 Search Results

Contextual Info: M IT SU BISH I MICROCOM PUTERS M 37 7 10 S 4B F P 16-BIT CM OS M ICRO C O M PU TER DESCRIPTION The M37710S4BFP is a microcomputer designed with highperformance CM O S silicon gate technology. This is housed in a 80-pin plastic molded QFP. This microcomputer has a

Contextual Info: SV2637-001 Preliminary Vertical Cavity Surface Emitting LASER GaAs 850 nm VCSEL FEATURES • Miniature, pill style package • 4° nominal emission angle • Designed for low drive currents (7-15 mA) . High output vs Input current performance » Ideal for high resolution applications

Contextual Info: SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20° nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION

IPM1560

Abstract: high side IGBT driver optocoupler
Contextual Info: P D -9.1283 International S Rectifier PROVISIONAL IP M 1 56 0 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 2kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast“ IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes.

PTM62

Abstract: ca2p CDR03 receiver module PTM61 3448-7950 CDR03 receiver ep27 dspc-01 1FW 43 transistor cdr64
Contextual Info: CMOS 8-BIT SINGLE CHIP MICROCOMPUTER S1C88655 Technical Manual S1C88655 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

Contextual Info: Preliminary KMM5322200BW/BWG DRAM MODULE KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The • Part Identification

D8379

Abstract: D837 by229 D8403 800R BY229-200 BY229-200R GG22
Contextual Info: 25E ]> • bb53*ì3i 00552^3 a BY229 SERIES N AMER PHI LIPS/DISCRETE 7 = 0 3 -; 7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated d o u ble-d iffu se d re c tifie r diodes in p la stic envelopes, fe a tu rin g fast reverse recovery tim es and non-snap-off characteristics. T hey are intended fo r use in ch o p pe r a p p lica tio ns as w e ll as in