Untitled
Abstract: No abstract text available
Text: TOSHIBA { D IS CRET E/ OP TO } 9097250 TOSHIBA DffJiDTTESD CDIS C R E T E/ OP TO S6C "uTB'CTJ 00G7ÖD3 0 ~f- 3 3 - I j S IL IC O N NPN TR IP L E D IF F U S E D M E S A TYPE Unit in mm 02&OMAX. COLOR TV HORIZONTAL OUTPUT APPLICATIONS. ¡Í21.0MAX FEATURES:
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AC42C
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MMBA812M5
Abstract: MMBT5086
Text: SAMSUNG SEM ICO N D U CT O R . IN C MMBA812M5 l^ E D J 7^4142 00G7234 S | PNP EPITAXIAL SILICON TRANSISTOR ast-cft T - GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoHector-Emitter Voltage Emitter-Base Voltage
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MMBA812M5
MMBT5086
OT-23
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MMBC1009F1
Abstract: No abstract text available
Text: SAM SUNG SEMICONDUCTOR INC MMBC1009F1 l^ E D | 7*ìfc.4142 00G723? | NPN EPITAXIAL SILICON TRANSISTOR1~ ^ AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic' Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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00G723?
MMBC1009F1
OT-23
MMBC1009F1
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 I ME D | 7^4142 00G723G fl | PNP EPITAXIAL SILICON TRANSISTOR T DRIVER TRANSISTOR - & - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-B ase Voltage Vc8 0 50 V CoHector-Emltter Voltage
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00G723G
MMBA811C7
OT-23
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LED CHIPS
Abstract: lcd panel radiation sharp lot number format lt409 SHARP LED
Text: LED Panel Displays 5 1E D • a ia tm fl LT4092E SHARP CORP 00G7315 lib «SRPJ LED Panel Display with PWB LT4092E -r^ l-3 ' I Model No. LT4092E Yellow-green GaP I Features 1. Radiation size 2 0 .6 x 8 5.0mm 2. For positive type LCD 3. Display format of LCD 20 characters x 2 lines
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00G7315
LT4092E
LT4092E
110X110
150X150
180X180
200X200
LED CHIPS
lcd panel radiation
sharp lot number format
lt409
SHARP LED
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2SA594
Abstract: c0b35pf 2SC594 70M40
Text: TOSHIBA í D I S C R E T E / O P T O } 909725 0 T OS HI BA ~SÍ DISCRETE/ OPT O 00G7427 Ql h 21 5òC 0 'f-3/-'Î-3 SILICON NPN EPITAXIA L TYPE (PCT PROCESS) Unit- in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. 0 9 ,3 9 MAX. VIDEO AMPLIFIER APPLICATIONS. 0 8 .4 5 MAX
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00G7427
200MHz
100mA,
2SA594.
lllllllllllllllll1l11lllllllllllllllll1ll
2SA594
c0b35pf
2SC594
70M40
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BAT33
Abstract: No abstract text available
Text: 2bmi3D b4E D DALLAS 00G742Ü 34T SEMI CONDUCTOR IDAL DS2251 T CORP DALLAS SEMICONDUCTOR DS2251 (T) 128K Soft Microcontroller FEATURES PACKAGE OUTLINE • 8051 compatible uC adapts to its task - 32, 64, or 128K bytes of nonvolatile SRAM for program and/or data storage
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00G742Ã
DS2251
DS2251
2L14130
BAT33
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9914E
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 14E D | 00G7äfc.a T . s> KS82C50A 1 | - 7 5 - 3 7 '0 5 CMOS ASYNCHRONOUS COMMUNICATION ELEMENT ACE Preliminary FEATURES/BENEFITS DESCRIPTION Single Chip UAR17BRG DC to 10MHz Operation, (DC to 625K Baud) Crystal or External Clock Input
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KS82C50A
UAR17BRG
KS82C50A
0-10MHz
82C50A
9914E
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Untitled
Abstract: No abstract text available
Text: S AM SU N G SEMICONDUCTOR INC MPS3706 IME D | 7^4142 00G7317 1 | NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 GENERAL PURPOSE TRANSISTOR • Collector-Em ltter Voltage: Veto= 20V • C ollector Dissipation:'Pc max =625mW TO-92 ABSOLUTE MAXIMUM R ATING S (Ta=25°C)
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00G7317
MPS3706
625mW
2N4400
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sj 2038
Abstract: ic sj 2038 scr gate drivers ic ec sanyo 2SD1628 p10j T35 ET sanyo sdk marking sdk
Text: SANYO SEMI CONDUCTOR 2SD1628 CORP ESE D 7 ^ 7 0 7 ^ 00G7S4L, T - 3 5 4 -15 % 2038 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications •X1731A Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor
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ci707b
000724b
2SD1628
250mm2
sj 2038
ic sj 2038
scr gate drivers ic
ec sanyo
p10j
T35 ET
sanyo sdk
marking sdk
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XTAL 12 MHz
Abstract: 72-PIN CRC-16 DS2251 DS2251-32-12 DS2251-32-16 DS2251-64-16 DS2251T
Text: b4E D 2bmi3D 00G742Ü 34T DS2251 T IDAL DALLAS SEMICONDUCTOR CORP DALLAS SEMICONDUCTOR DS2251 (T) 128K Soft Microcontroller FEATURES PACKAGE OUTLINE • 8051 compatible uC adapts to its task - 32, 64, or 128K bytes of nonvolatile SRAM for program and/or data storage
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2bl413D
00G742Ã
ds2251
CRC-16
72-PH
XTAL 12 MHz
72-PIN
DS2251
DS2251-32-12
DS2251-32-16
DS2251-64-16
DS2251T
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2SD873
Abstract: 20AS AC73 ITCH7250
Text: “5b TOSHIBA -CDISCRETE/OPTO} DE É T C H T E S O 00G7&3L, fl / 9097250 TOSHIBA gfeC 07 8 3b <D I S C R E T E / O P T O D7<33-/3 2SD873 SILICO N NPN T R IP L E D IFFU SED TYPE_ INDUSTRIAL APPLICATIONS. Unit in iran HIGH POWER AMPLIFIER APPLICATIONS.
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ITCH7250
-65VL75lil
07fl3fl
T-33-Ã
2SD873
20AS
AC73
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R23AF 800-600
Abstract: DO-200AA R23AF R23AF6A 10n8
Text: 4855452 INTERNATIONAL REC TI F IE R IO R ~05 02E 07936 Data INTERNATIONAL RECTIFIER "T-03 - D Sheet NO. K U -Ï. I ] E j 4 Û S S M S 5 00G7T3fc> 0 | R23AF S E R IE S 800-600 VOLTS R A N G E R E V E R S E R E C O V E R Y T IM E 0.9/iS 300 A M P AVG H O C K E Y PU K
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t-03-jz3
DD07IÃ
R23AF
R23AF6A.
D0-200AA
E1017
R23AF 800-600
DO-200AA
R23AF6A
10n8
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2SC2391
Abstract: 10ID
Text: ~5Í T O S H I B A -CDISCRETE/OPTO} 909 725 0 TOSHIBA dF|t[H7S50 00G7S5ä CD ISC RETE/OPTO SILICON NPN EPITAXIAL PLANAR TYPE_ Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : Po= 3W Min.) (f=470MHz, VCC=12.6V, Pi=0.4W)
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H7S50
470MHz,
470MHz
I11LI
2SC2391
10ID
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s-master digital amplifier
Abstract: etri converter S-Master ECHO schematic diagrams high end amplifier schematics CDB6400 CS6400 CS6400-IQ Handsfree full duplex MCI455
Text: CS6400 Semiconductor Corporation Echo-Cancelling Codec Features General Description • Applicable in: - Digital-Cellular Hands-Free Phones - Analog-Cellular Hands-Free Phones - Office Speaker Phones - Desktop & Video Teleconferencing - Network/Base Stations
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CS6400
CS6400
36--DS80PP1
254b3EH
00070e!
s-master digital amplifier
etri converter
S-Master
ECHO schematic diagrams
high end amplifier schematics
CDB6400
CS6400-IQ
Handsfree full duplex
MCI455
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7A05
Abstract: DE07 JJS-15 IC 7473 motor Agilent OR Hewlett-Packard "an 942" FDC37C665 si 7200 gc 82077AA FDC37C651 FDC37C661
Text: STANDARD MICROSYSTEMS bSE D 05b4bflb STANDARD MICROSYSTEMS CORPORATION. []007fl03 543 MSMC F D C 37C 665 FD C 37C 666 COMPONENT PRODUCTS DIVISION 80 A rk a y D riv e . H a u p p a u g e , n y 11788 516 435 6000 Fax (516) 231 -6004 Advanced High-Performance Multi-Mode
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007fl03
FDC37C665
FDC37C666
231-60M
82077AA
100mm
200mm
7A05
DE07
JJS-15
IC 7473 motor
Agilent OR Hewlett-Packard "an 942"
si 7200 gc
FDC37C651
FDC37C661
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Untitled
Abstract: No abstract text available
Text: BROOKTREE CORP b3E B • 1^455^5 DDQ7G3T Interface Specification IS-210.15 SMDS C o n tro l and R e a sse m b ly F o r m a tte r Part # UGA-210 M arch, 1993 Brooktree Brooktree Corporation 9950 Barnes Canyon Road San Diego, CA 92121 USA 6 1 9 -4 5 2 -7 5 8 0
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IS-210
UGA-210
0007QM0
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Untitled
Abstract: No abstract text available
Text: MP7651 Z * E X A 8-Channel, Voltage Output 10 MHz Input Bandwidth 8-Bit Multiplying DACs with Serial Digital Data Port and Chip Select Decoder R FEATURES Low Harmonic Distortion: 0.25% typical with VREF = 1 V p-p @ 1 MHz • 8 Independent 2-Quadrant Multiplying 8-Bit DACs
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MP7651
150ns
10mV/DIV)
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Untitled
Abstract: No abstract text available
Text: MP87099 CMOS Very Low Power, 750 KSPS, 10-Bit Analog-to-Digital Converter with 8-Channel Mux FEATURES BENEFITS • • • • • • • • • • • • • • • 10-Bit Resolution 8-Channel Mux Sampling Rates from <1 kHz to 750 kHz Very Low Power CMOS - 30 mW typ
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MP87099
10-Bit
10-Bit
Q0Q70bt1
3422blfl
00G7G7G
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idt71586
Abstract: ES051 IDT7MB6044
Text: INTEGRATED 3ÛE D DEVICE • 4Ö5S771 0G071Ô1 _ - T 2 x 4 K x 64 DATA/INSTRUCTION CACHE MODULE FOR IDT79R3000 CPU S ■ -* /A -2 ^ IDT -1 7 ADVANCE INFORMATION IDT7MB6044 FEATURES: DESCRIPTION: • High-speed 64K-byte CMOS static RAM module con
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5S771
0G071
IDT79R3000
64K-byte
12MHz,
20MHz,
25MHz
33MHz
IDT79R3000
idt71586
ES051
IDT7MB6044
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Untitled
Abstract: No abstract text available
Text: LG Semicon. Co. LTD. Description Features The GMM7408200AS/SG is an 8M x 40 bits dynamic RAM MODULE which is assembled 20 pieces of 4M x 4 bit DRAMs in 24 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7408200AS/SG is optimized for
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GMM7408200AS/SG
GMM7408200AS
GMM7408200ASG
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IDT7M812
Abstract: No abstract text available
Text: IN T E G R A T E D DEVI CE 3ÛE D • 4ÔES771 Q0G7G1M fl ■ ID T 23-14 IDT7M812 IDT7M912 64K x 8 64K x 9 CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • High-density 512K CMOS static RAM module • 64K x 8 IDT7M812 or 64K x 9 (IDT7M912) configuration
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ES771
IDT7M812)
IDT7M912)
40-pin,
IDT7M812
IDT7M912
IDT7M812/IDT7M912
T-46-23-14
MIL-STD-883,
7M812
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GMM7374200BNS/SG is a 4M x 36 bits Dynamic RAM MODULE w hich is assembled 9 pieces of 4M x 4bit DRAMs in 24 26 pin SOJ package on the printed circuit board w ith decoupling capacitors. The GM M 7374200BNS/SG is optim ized for
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GMM7374200BNS/SG
7374200BNS/SG
GMM7374200BNS/SG
GMM7374200BNS
GMM7374200BNSG
111111111111111111ii
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1641S
Abstract: No abstract text available
Text: TRIACS Absolute Maximum Ratings Repetitive Peak Off-State Voltage Surge On-State Current RMS On-State Current Conduction Angle = 360° Type No. 50Hz Full-Cycle Sinewave Non-Repetitive Peak Value Tj = 125°C V o rm I t RMS I t sm (V) (A) (A) 'TM 341S-L 400
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341S-L
TM361S-L
TM541S-L
TM561S-L
TM841S-L
TM1241S-L
TM1261S-L
1641S
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