00M31 Search Results

L02B

Abstract: IC L02B j1200 RF2701 UHF Phase Shifter 4-00J1
Contextual Info: RF2701 I MICRO-DEVICES QUADRATURE DEMODULATOR Typical Applications • UHF Digital and Analog Receivers • Digital Communications Systems • Spread Spectrum Communications Systems • Commercial and Consumer Systems • Portable Battery Powered Equipment

bd955

Abstract: BD955F 952F BD949F BD950F BD951F BD953F BD954F
Contextual Info: BD950F;952F SbE D PHILIPS INTERNATIONAL • R D Q fid F - QÇ>RF 711D02ti 0 0 4 3 1 1 b 432 H P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.

bd950

Abstract: b0952 k 952 BD949 BD954 IEC134 T-33-lf BD949 Philips philips ET-E 60
Contextual Info: BD950; 952 BD954; 956 J^ PHILIPS INTERNATIONAL SbE D m 711002b 0Cm310fl 3bb « P H I N 7 ^ 3 3 -/ ? SILICON EPITAXIAL B A SE POW ER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a w ide range o f power am plifiers and fo r switching applications.

BDS61A

Abstract: smd npn darlington smd JS 60n60b MC555 BDS61 BDS61B BDS61C IEC134 7SOT223
Contextual Info: PHILIPS INTERNATIONAL Philips C om ponents Data sheet status Product specification date of issue April 1991 SbE D • 711Qfi2b 004312b 3Û1 ■ PHIN T- 3 ? -2 BDS61/61 A/61 B/61C NPN Silicon Darlington power transistors DESCRIPTION PINNING - SOT223 PIN 1 2

D 1991 AR

Abstract: BDS60 BDS60A BDS60B BDS60C
Contextual Info: SbE ]> • PHILIPS INTERNATIONAL Data sheet status Product specification date of issue April 1991 711Dfl2ti ODMBllfi EGS M P H I N T-33-3/ BDS60/60A/60B/60C PNP silicon Darlington power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector emitter

BD949

Abstract: BD949 philips bd955 BD951 BD953 b0949 b0951 BD950 D102I
Contextual Info: BD949; 951 BD953; 955 J PHILIPS INTERNATIONAL 5bE D • 711002b 00430^0 bT? ■ P HIN 7 ^ 7 3 - / / SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic T 0 -2 2 0 envelope. W ith their p-n-p complements BD950; 95 2 ; 9 5 4 and 9 5 6 they are intended for use in a wide range o f power amplifiers and for switching applications.

d78p218

Abstract: D78P218ACW 83YL-9181A Interfacing of 32k ram and 16K EPROM with 8085 uPD75xxx 9201B uPD75X P55W murata Resonators 1993 P218A
Contextual Info: I L>427525 0043103 5T2 M N E C E N — t C NEC Electronics Inc. J/PD78218A Family fiPD78217A/218A/P218A 8-Bit, K-Series Microcontrollers With A/D Converter, Real-Time Output Ports _ July 1993 Description 3 Pin com patible w ith /JPD78214 fam ily

Contextual Info: HARRIS SEmCOND SECTOR SbE D H 430SS71 □ □M31bci ESS B H A S HI-7153/883 ¡33 8-Channel, 10-Bit, High Speed July1992 Sampling A/D Converter Features Description • This Circuit Is Processed in Accordance to Uil-Std883 and is Fully Conformant Under the Provisions of