00Q17 Search Results

30n60

Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Contextual Info: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100

Contextual Info: DAICO INDUSTRIES INC Pb04'iE0 00Q17?a ill • blE D FEATURES l!ilpplL DAI J I Ç iJ L _ 81 ■ 3 0 - 2 0 0 MHz ■ 25 nSec Switching Speed ■ 0.5 dB LSB, 63.5 dB Range ■ TTL Control ■ See DA0717 For Surface Mount Version ■ See 100C1757 For Connectorized Version

BPM-150 datel

Abstract: Datel bpm Datel bpm 120 BPM-180 BPM-180/16 BPM-150 Datel bpm 180/16 bpm180 BPM150 DATEL
Contextual Info: DATEL INC 47E » EbSISbl Line O perated Dual Output High Voltage Power Modules 00Q1771 EOT • niMn DTL OS' FEATURES • . • • • • • Operated from line voltage 103 to 126 VAC at 60-550 Hz Fully regulated ±120V D C , ±150V D C , ±180V D C output

LVJ DIODE

Abstract: Collmer Semiconductor Collmer SC SE036 Schottky Diode SC-62
Contextual Info: COLLMER SEMICONDUCTOR I NC MAE D 2230715 00Q1745 5 7 e] • C O L SE036 1 .OA ""T -0 'S - 1 3 Outline Drawings SC H O TTK Y B A R R IE R D IO D E L6 MAX. 4.6 MAX 18 MAX onhfc 0.44 MAX. 0-55MAXJ.-U 15_15 to (SI I 0.48 MAX. 3.0 Features S urface m o u n tin g devices

1S26

Abstract: P4C116 P4C116L AD5e
Contextual Info: PERFORMANCE SEMICONDUCTOR SDE V • 7 0 b 2 5 cl7 0001780 3äb * P S C P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12,15/20/25/35 ns (Commercial)

Contextual Info: IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version) - 1.0 mA (IP version)

Contextual Info: HUALON MICROELECTRONICS 24E D • 4516041 OOOOOlfa E ■ T = - r7 5 - 5 ; 7 HM9215 SERIES HM9215/11/10/09/05 PROGRAMMABLE MANCHESTERCODE ENCODER/DECODER Features • Operating voltage range 3.0V-9.0V. • Manchester code encoder/decoder on one chip. • Stable operating frequency.

Contextual Info: •Comlinear A Sutiunal Semiconductor Co ni p a n 1.2GHz Ultra-Wideband Monolithic Op Amp y CLC449 APPLICATIONS: FEATURES: • High Performance RGB Video • 1.2GHz small-signal bandwidth Av = +2 • RF/IF Amplifier • 2500V/|is slew rate • Instrumentation

Contextual Info: Infrared E m itte r M TE2050-O H1 A pplications • Remote Control • Position Sensing • Optical Switch Features • High Output Power • Excellent Optical/Mechanical Axis Alignment • General Purpose Radiation Pattern M AXIM UM RATINGS Ta = 25°C CHARACTERISTIC

SKHI 65

Abstract: CAT64LC40 SKHI 10 op
Contextual Info: bûE nt.Hb'ìS □0D17SM DäT » Advance CST CATALYST S EM ICO NDUC TOR S E M I C O N D U C T O R CAT64LC40/CAT64LC40I 4K-Bit SERIAL E2PROM FEATURES • SP I Bus C o m p atib le P o w er-U p In a d v e rtan t W rite P rotectio n ■ L o w P o w e r C M O S T e c h n o lo g y

DPS512S8AP

Abstract: 165001
Contextual Info: DENSE PAC 4 Megabit High Speed CMOS SRAM M I C R O S Y S T E M S DPS512S8AP DESC RIPTIO N: The DPS512S8AP is a high speed 5 1 2K x 8 high-density, lo w -p o w e r static RAM m odule comprised of four high speed ceramic 128K x 8 monolithic SRAM's, an advanced high-speed CMOS

Contextual Info: H igh p erfo rm an ce 512Kx8/256Kxl6 5V CMOS Flash EEPROM U A S 29F 400 A 512Kx8/256Kx 16 CMOS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 5 1 2 K X 8 o r 2 5 6 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a r c h it e c tu r e

Contextual Info: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a /3 0 ~ 4 0 a FEA TU RES ► - 5.8 .23)DIA ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency n +[ 1.5(.059) r>, a |¡ 1.3^.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available

Contextual Info: OMA82Q1SF DUAL HIGH POWER, HIGH CURRENT OPERATIONAL AMPLIFIER MODULE 12 Pin, Dual Uncommitted Power Operational Amplifiers And Power Sense Resistors FEATURES • • • • • • • Dual Op Amps - Uncommitted Dual Sense Resistors - Uncommitted Output Current To 10A Peak

Contextual Info: « SYNERGY SEMICONDUCTOR HIGH FREQUENCY CLOCK GENERATOR Clockworks SY89061V DESCRIPTION FEATURES • 3.3V and 5V power supply options ■ Output frequency range: 500MHz to 700MHz ■ Low jitter PLL design ■ On-chip 20 ohms driver ■ Differential outputs with 600mV min swing

CL9100 MPEG

Abstract: cl9100 c-cube CL9100
Contextual Info: CL9100 Multimode Video Decoder User’s Manual % C-Cube Microsystems 1 7 b t4Etic5 G 0 0 1 b 3 2 fib'i m C-Cube Microsystems reserves the right to change any products described herein at any time and without notice. C-Cube Microsystems assumes no responsibility or liability arising from the use of the prod­

Contextual Info: MICRON TECHNOLOGY INC 17E D blllS41 MICRON • Kcmaii Me MT1259 883C MILITARY DRAM 256K X 1 DRAM T < K ,-25.- iS DRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-85152 • JAN M38510/246 16L/300 DIP (D-2) FEATURES *A8C 1-W 16

Contextual Info: 1 MICRON TECHNO LOG Y INC 1?E D • bUlSMI MICRON ■ MT4067 883C HCWtOlOGV.B« MILITARY DRAM 64K X 4 DRAM T A io - z ^ - n PIN ASSIGNMENT Top View • SM D 5962-87676 18L/300 DIP FEATURES (D-6) • Industry standard pin-out and timing • All inputs, outputs, and clocks are fully TTL

aerovox capacitor date codes

Contextual Info: Radial Leaded Capacitors Metallized Polypropylene Dielectric Preformed Case with Epoxy Fill IGBT Snubber Capacitors Type RBPS Performance Testing Accelerated Life: Performance Requirements • delta < 5% Capacitance < 125% of initial limit ESR • > 50% of initial limit

chn 437

Contextual Info: r c i T H M E - MF TRUNK RECEIVERS & TRANSMITTERS INNOVATING SOLUTIONS M-986-1R1 &-2R1 MF Transceivers Features Teltone M-986-1R1 and -2R1 M F Transceivers contain all the logic necessary to transmit and receive R1 multifrequency signals on one integrated circuit IC . M-986-1R1 is a sin­

74153 mux

Abstract: mvb bus schematics 74138 decoder IC 74153 dual 4*1 multiplexer pin diagram 41 multiplexer 74153 OPTI 82C611 ic 74153 Multiplexer 82C602A 82C465MVB 82c465
Contextual Info: 82C465MV/MVA/MVB Single-Chip Mixed Voltage Notebook Solution 1.0 Overview The OPTi 82C465MV chipset is a highly integrated ASIC that implements 32-bit AT-compatible core logic, along with power management and CPU thermal management hardware, in a single device. Its feature set provides an array of control and

EDI8L32512C

Abstract: 323DI
Contextual Info: EDI8L32512C ELECTRONIC DESIGNS INC.- High Performance 16 Megabit SRAM mi 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, fourmegabit density Static RAM organized as a512Kx32 bit array. Four Chip Enables, Write Control, and Output Enable

EI 33 5mh

Abstract: AT27C512R AT27LV512R AT27LV512R30DC
Contextual Info: rwtfii'iniïir ATMEL CORP 43E » B 1074177 0001745 T ESS A T M AT27LV512R T - 9 é - / 3 Features • • • Wide Power Supply Range, 3.0 VDC to 5.5 VDC Compatible with JEDEC Standard AT27C51 2 R Low Power 3-Volt CMOS Operation 100 nA max. Standby 26mW max. Active at 3.3 MHz for Vcc = 3.3 VDC

HIT 7070

Abstract: k1757
Contextual Info: PERFORMANCE SEMI CONDUCTOR SOE D • 70bBST7 000175b 32T ip PACE 1757M/ME PREÜMl COMPLETE EMBEDDED CPU SUBSYSTEM FEATURES Programmable address wait states. Implements complete MIL-STD-1750A ISA Including optional MMU, MFSR, and BPU functions. Sixteen levels of interrupts are provided per MIL-STD1750A. Interrupts can be either edge- or level-sensitive.