0118 TRANSISTOR Search Results

FRC connector

Abstract: NL8060BC31-41D 10 pin FRC connector 121PW181 lcd cable inverter pin diagram 12.1-inch lcd Color TFT LCD Module E170632 reactor data sheet 5 x 7 dot matrix display common cathode home made dc power inverter diagram
Contextual Info: TFT COLOR LCD MODULE NL8060BC31-41D 31cm 12.1 Type SVGA LVDS interface (1port) DATA SHEET DOD-PP-0261 (4th edition) This DATA SHEET is updated document from DOD-PP-0118(3). All information is subject to change without notice. Please confirm the sales representative before

MD14

Abstract: TRSP4015 TRSP2755S TRSP3015 TRSP3015S TRSP3505 TRSP3515S TRSP4015S TRSP4255S TRS4506
Contextual Info: HIGH VOLTAGE flO DE • 4 471D7Ö 00000G7 T SILICON PNP - POWER TRANSISTORS MAX. COLL. DISS. in Free Air #25“ C MAX. THERMAL RES. Junctiqp to Case - h FE BIAS T E M R Watts Is Ic BV cb q BV “ ° BVcE° B V « , @280 U 0118»» (AMP) (AMP) (VOLT) (VO LT) (VOLT)

2493 transistor

Abstract: marking 9721 IC 7109
Contextual Info: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB at f = 1 GHz TT irrV » fio in JJlg ll V ^ U lll

Contextual Info: TO SH IBA MT3S03AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.4 dB at f = 2 GHz TTirrV» fio i n JJlg ll V ^ U lll

Contextual Info: TOSHIBA TENTATIVE 3SK320 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK320 Unit in mm UHF BAND LOW NOISE AM P UHF BAND MIX 2.1 ± 0.1 1.25 ± 0.1 = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage

Contextual Info: TO SH IBA MT4S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03AU Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz 1.25 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TO SH IBA MT3S03AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SH IBA MT3S04AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AU VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SH IBA MT4S03A TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03A Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 • • -fr Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz 2 .9 -0 .3 MAXIMUM RATINGS (Ta = 25°C)

MT4S04AU

Contextual Info: TO SH IBA MT4S04AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S04AU Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • 1.25 ±0.1 Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 13.5 dB f = 1 GHz m a v ì m i i m R A TiM r;«; r r a

Contextual Info: TOSHIBA MT4S04A MT4S04A TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 2.9-0.3 • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 13.5 dB f = 1 GHz m a v ì m i im RATiMr;«; r r a

Contextual Info: TO SH IBA MT3S04AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz 1.6 ±0.2 ,0.8 ± 0 . 1,

9011 9012 9013 9014 9018

Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
Contextual Info: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER

JOHANSON 2951

Abstract: MRF5174 IR 21025 8ASF U028
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 2W - 4 0 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON .d e s ig n e d prim arily for w ideband large-signal driver and pre­ driver am plifier stages in the 2 6 0 -6 0 0 M H z frequency range.

MRF654

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF654 The R F Line 15 W 470 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r 12.5 V o lt UHF large-signal a m p lifie r app licatio n s in in d u stria l and co m m ercia l FM e q u ip m e n t ope ra tin g to 512 MHz.

BDV65, BDV64

Abstract: BOV65B transistor npn 3-326 transistors BDV65c BOV65 BDV65B-BOV64B bdv64b transistor Motorola 3-326 transistor transistor BDv65c 150EC
Contextual Info: MOTORCLA SC XSTRS /R F 12E D | b3b7254 D 00‘47bcl 7 | NPN BDV65 BDV65A BDV65B BDV6SC MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP BDV64 BDV64A BDV64B BDV64C DARLING TO N S 10 AM PERES COMPLEMENTARY SILICON PLASTIC POWER DARLINGTONS COMPLEMENTARY SILICON POWER TRANSISTORS

MRF5175 transistor

Abstract: MRF5175 transistor 2sc 546
Contextual Info: MOT OR OL A SC CXSTRS/R F 4bE D • MOTOROLA b3b?2SM GOLOSO T -3 3 -0 5 ■ SEMICONDUCTOR TECHNICAL DATA MRF5175 T h e R F L in e 5 W - 400 MHi R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver

7320CR

Abstract: Eftec 64t
Contextual Info: 03/06/2003 RELIABILITY REPORT FOR DS21552, Rev B1 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com

C124 EST

Abstract: transistor c124 C124 E S S transistor C124 E S W transistor IRGPC40FD2
Contextual Info: PD - 9.1113 International ïôr Rectifier IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = • Switching-loss rating includes all “tail" losses • H EX FR E D soft ultrafast diodes • Optimized for medium operating frequency 1 to

2sa1306

Abstract: 2SA1306B 2SC3298B CI43 Motorola 406 R6872
Contextual Info: MOTOROLA SC XSTRS/R F MbE D b3 b ?5 S4 0 0 el37b7 MOTOROLA m0 4 Tb r(*er t*,'s data sheet by 2SC3298B/D T=-3 3 -Q { SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Transistors • Designed for use as High Frequency Drivers in Audio Amplifiers

Motorola TE 2556

Abstract: MRF323
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF323 The RF Line 20 W - 4 0 0 M H z RF POWER TRANSISTO R NPN SILICO N RF POWER TRANSISTOR N PN S IL IC O N . . . d e s ig n e d p r im a r ily f o r w id e b a n d la rg e -sig n a l d r iv e r a n d p r e d r iv e r

YB1253

Abstract: sot-89 MARKING ge regulator B3 marking transistor sot-23
Contextual Info: YB1253 300mA, Low Power, High PSRR LDO Regulator Description Features The YB1253 is a series of ultra-low-noise, high PSRR, and low quiescent current low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1253 regulators achieve a low 300mA dropout at

12v DC motor

Abstract: remote speed control of ac motor 100K preset potentiometer DIODE in4005 IN4005 diode remote speed control of dc motor relay 12v dc 100rpm DC motor potentiometer 4k7 1K preset potentiometer
Contextual Info: RS 320-584 PB0224 Issue 4 OEM Speed control board 102 and 313 speed control board Installation and operating instructions 1 Contents Declarations 1.0 Description 2.0 Specification 3.0 Identification 4.0 313FD/D 12V DC motor - externally mounted transistor