013TR Search Results

Contextual Info: /Z T SGS-THOMSON *7 Æ b ST24C01 I* ^ S [Ì(M (q M Ì SERIAL ACCESS CMOS 1K (128 x 8 EEPROM • 1,000,000 ERASE/W RITE CYCLES MINIMUM, WITH O VER 10 YEARS DATA RETENTION ■ SINGLE 3V TO 5.5V SUPPLY VOLTAGE ■ TW O W IRE SERIAL INTERFACE, FULLY l2C

Contextual Info: Æ 7 ^ 7 # S G S -T H O M S O N ST93CS46 R iflD ® © I[ L I O T ® E O D © Ì SERIAL A C C E S S C M O S 1K bit (64 x 16 EEPR O M • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ SINGLE 3V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA

Contextual Info: / Z T SGS-THOMSON *7#» »»IUI !! «©® ST93C56, 56C ST93C57C SERIAL MICROWIRE BUS 2K 128 x 16 or 256 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 128 x 16 or 256 x 8 ■ BYTE/WORD and ENTIRE MEMORY

Contextual Info: Æ * 7 7 /« S G S -T H O M S O N 5 ' L iO T IM S S T 9 3 C S 6 7 2.5V SERIAL ACCESS CMOS 4K bit 256 x 16 EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ SINGLE 2.5V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA

VA00874

Contextual Info: ST93C46A ST93C46T SGS-THOMSON ^ 7 # llü [E } Q i[ L i( ê ¥ [] 3 @ [* S SERIAL ACCESS CMOS 1K bit (64 x 16 or 128 x 8) EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ DUAL ORGANISATION: 6 4 x 1 6 or 1 2 8 x 8

Contextual Info: / r : SGS-THOM SON * 7 # , H 0M ILI« M 0(g§ ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 or 32 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

Contextual Info: Æ Ä T T# S G S -T H O M S O N ST93C06 H D [^ @ [1 [L [I© ¥ ^ ® R Ì]D © Ì SERIAL ACCESS CMOS 256 bit 16 x 16 or 32 x 8 EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION « DUAL ORGANISATION: 16 x 16 or 32 x 8

FZJ 101

Abstract: ST93CS46 ST93CS47
Contextual Info: S G S -T H O M S O N « (g lia m itg m iM IK g t ST93C S46 ST93C S47 SERIAL MICROWIRE BUS 1 K( 6 4 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

ST93CS66

Abstract: ST93CS67 st93CS66M1 but options mqs
Contextual Info: ST93CS66 ST93CS67 S G S -1 H 0 M S 0 N M [M ilLI gïï[i3©K3D(i§ SERIAL MICROWIRE BUS 4K (256 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

A10089

Abstract: ST93CS56 ST93CS57
Contextual Info: r= 7 ^ 7 # ST93CS56 ST93CS57 S G S -T H O M S O N • » M ilL Itg T ïïiS tM Q tg S SERIAL MICROWIRE BUS 2K 128 x 16 EEPROM - 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION • SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING

Contextual Info: ST93CS56 ST93CS57 2K 128 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56

Contextual Info: L4993 Low drop voltage regulator Preliminary Data Features Max DC supply voltage VS 40V Max output voltage tolerance ∆V0 +/-2% Max dropout voltage Vdp 400 mV Output current I0 150 mA Quiescent current Iqn 79 µA 1 SO-20 SO-8 1. Typical value with regulator disabled

Contextual Info: ST93CS46 ST93CS47 1K 64 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS46

Contextual Info: S G S -T H O M S O N » iL iW iO g i S T 9 3 C S 6 7 2.5V SERIAL ACCESS CMOS 4K bit (256 x 16 EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION * SINGLE 2.5V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA

Contextual Info: SGS-THOMSON o m » iO T ô [ ï l S ST93CS46 SERIAL ACCESS CMOS 1K bit (64 x 16) EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION * SINGLE 3V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA ■ PAGE WRITE MODE (4 WORDS)

Contextual Info: /= T S G S -T H O M S O N ^ 7 # [* ^ S i ¥ K (Q M (g S ST93CS46 ST93CS47 SERIAL ACCESS CMOS 1K bit (64 x 16 EEPROM • MINIMUM 1 MILLION ERASE/WRITE CYCLES, with OVER 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAM­

diode 56c

Abstract: ST93C56 ST93C57C
Contextual Info: ST93C56, 56C ST93C57C SERIAL MICROWIRE BUS 2K 128 x 16 or 256 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

ST93CS46

Abstract: ST93CS47
Contextual Info: ST93CS46 ST93CS47 SERIAL MICROWIRE BUS 1K 64 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS46 – 2.5V to 5.5V for the ST93CS47

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

ST93C06C

Abstract: M93C06 ST93C06
Contextual Info: ST93C06 ST93C06C 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

M93C56

Abstract: ST93C56 ST93C56C ST93C57C
Contextual Info: ST93C56, 56C ST93C57C 2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

Contextual Info: ST93CS46 ST93CS47 SGS-THOMSON IIIIMJì ILIìMWIIÈÌ 1K 64 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE

ST93C06

Abstract: ST93C06C AI00816B
Contextual Info: ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit 16 x 16 or 32 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

ST93CS56

Abstract: ST93CS57
Contextual Info: ST93CS56 ST93CS57 SERIAL MICROWIRE BUS 2K 128 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56 – 2.5V to 5.5V for the ST93CS57